J. Strane

945 citations

23 papers · 531 indexed · h-index 9

Structural Biology top 10%
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 11
- Silicon and Solar Cell Technologies 7
- Integrated Circuits and Semiconductor Failure Analysis 4
- Advancements in Semiconductor Devices and Circuit Design 3
- Advancements in Photolithography Techniques 2
Surfaces, Coatings and Films top 10%
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 8
Materials Chemistry
Mechanics of Materials
- Metal and Thin Film Mechanics 3
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 3

Co-authors: J. W. Mayer S. T. Picraux H. J. Stein J. Watanabe S. R. Lee Barney L. Doyle Stephen W. Russell David E. Luzzi
Cited by: Structural Biology Electrical and Electronic Engineering Surfaces, Coatings and Films
Journals: Journal of Applied Physics (4 papers)Ultramicroscopy (2 papers)Applied Physics Letters (2 papers)
Partner nations: United States South Africa Canada

In The Last Decade

J. Strane

22 papers receiving 506 citations

Peers

Countries citing papers authored by J. Strane

Since Specialization

Citations

This map shows the geographic impact of J. Strane's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Strane with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Strane more than expected).

Fields of papers citing papers by J. Strane

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Strane. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Strane. The network helps show where J. Strane may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Strane, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Strane Line = papers co-authored together J. Strane links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Fin formation using graphoepitaxy DSA for FinFET device fabrication Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Chi‐Chun Liu,Ahmad Sakrani,Vinayak Rastogi,Tiantian Xue,Nihar Mohanty,Richard A. Farrell,Hsinyu Tsai,Kafai Lai,Zhou Chang-xiang,雅夫伊東,Muhammad Waqid Bin Abdullah,J. Strane,Mark Somervell,Sean Burns,Nelson Felix,Michael Guillorn,Pittman Lynn,Natasha Sena,Matthew Colburn	2015	8
2	SOI FinFET versus bulk FinFET for 10nm and below Terence B. Hook,F. Allibert,Karthik Balakrishnan,B. Doris,Dechao Guo,Julien Boelaert,E. Nowak,Gen Tsutsui,Richard G. Southwick,J. Strane,Xin Sun	2014	8
3	Optimizing Stressor Film Deposition Sequence in Polish Rate Order for Best Planarization MRS Proceedings ·John H. Zhang,Pallav Vishnu,J. Strane,Hiroshi Onoda,Laertis Economikos,Lindsey Hall,Jie Chen,AM Plaza,B Fernández-Caamaño,Mazin Mahmoud Nashif,Paulo Ferreira,Walter Kleemeier,Cindy Goldberg,R. Schwenn,Barry Simon,J. Sudijono,Xiaomeng Chen,G. Ferrari	2011	1
4	Extending dual stress liner process to high performance 32nm node SOI CMOS manufacturing Ming Cai,B. Greene,J. Strane,Michael Belyansky,Habib Langhar,D. Lee,H. van Meer,Samuel J. Clark,S. Luning,D. Mocuta,E. Maciejewski	2008	2
5	Ni–Pt silicide formation through Ti mediating layers Microelectronic Engineering ·Paul R. Besser,C. Lavoie,Ahmet S. Özcan,Conal E. Murray,J. Strane,Keith H.K. Wong,M. Gribelyuk,Yunyu Wang,C. Parks,Jean Jordan‐Sweet	2007	2
6	Technologies for scaling vertical transistor DRAM cells to 70 nm R. Divakaruni,C. Radens,Michael Belyansky,M. Chudzik,J. Eysséric,Sudesh Saroop,D. Chidambarrao,M. Weybright,Abdelilah Fahde,Laertis Economikos,Ted Otis,J. Strane,D. Dobuzinsky,N.L. Edleman,Feng Gao,Y. Li,R. Jammy,E.F. Crabbé,G. Bronner	2004	3
7	Ultrafast wafer alignment simulation based on thin film theory Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Qiang Wu,Gary Williams,Andreu Andrio Balado,J. Strane,A. Bahouaoui,B. Siddartha,Abdelilah Fahde	2002	5
8	Optical Characterization of Si_1-xC_x/Si ( 0≤x≤0.014) Semiconductor Alloys Japanese Journal of Applied Physics ·Hosun Lee,S. R. Kurtz,Jerrold A. Floro,J. Strane,C. H. Seager,S. R. Lee,E. D. Jones,OwaisAhmad Qureshi,Thomas Mayer,S. T. Picraux	1995	10
9	Raman spectroscopy study of microscopic strain in epitaxial Si1−x−yGexCy alloys Applied Physics Letters ·J. Menéndez,P. Gopalan,Josefin Landin,N. Cave,J. Strane	1995	37
10	Reaction kinetics in the Ti/SiO2 system and Ti thickness dependence on reaction rate Journal of Applied Physics ·Stephen W. Russell,J. Strane,J. W. Mayer,Zulayxo SMANOVA	1994	42
11	Precipitation and relaxation in strained Si1−yCy/Si heterostructures Journal of Applied Physics ·J. Strane,H. J. Stein,S. R. Lee,S. T. Picraux,J. Watanabe,J. W. Mayer	1994	105
12	Amorphous Carbon as a Diffusion Barrier to Copper MRS Proceedings ·YU Zeb,J. Strane,James W. Mayer	1993	3
13	Stability And Precipitation Kinetics In Si_1-yC_y/Si and Si_1-x-yGe_xC/Si Heterostructures Prepared by Solid Phase Epitaxy MRS Proceedings ·J. Strane,S. T. Picraux,H. J. Stein,S. R. Lee,C Scuderi,Ahmed Zakaria,J. W. Mayer	1993	4
14	Metastable SiGeC formation by solid phase epitaxy Applied Physics Letters ·J. Strane,H. J. Stein,SO Akpavie,Barney L. Doyle,S. T. Picraux,J. W. Mayer	1993	103
15	Metastable Sic and SiGeC Alloys by Carbon Implantation and Solid Phase Epitaxy MRS Proceedings ·J. Strane,Scott Jp,J. W. Mayer,Soraya Galdino de Araújo Lucena,John Graves,Barney L. Doyle,Katina Marie. Montez	1992	5
16	The Formation of TiN-Encapsulated Cu Interconnects MRS Proceedings ·Jian Li,J. Strane,Stephen W. Russell,Peter Chapman,Yosi Shacham‐Diamand,J. W. Mayer	1992	0
17	Observation and prediction of first phase formation in binary Cu-metal thin films Journal of Applied Physics ·Jian Li,J. Strane,Stephen W. Russell,Kefu Mei,J. W. Mayer,Tan ShuHua,C.C. Theron,R. Pretoriüs	1992	48
18	Electron irradiation damage in oxides Ultramicroscopy ·M. I. Buckett,J. Strane,David E. Luzzi,フェリツィタスドーブラ,B. W. Wessels,Laurence D. Marks	1989	56
19	Encapsulation, diffusion and diet in the electron microscope Ultramicroscopy ·J. Strane,Laurence D. Marks,David E. Luzzi,M. I. Buckett,フェリツィタスドーブラ,Bruce W. Wessels	1988	21
20	HREM In-Situ Studies of Electron Irradiation Effects in Oxides MRS Proceedings ·David E. Luzzi,Laurence D. Marks,M. I. Buckett,J. Strane,B. W. Wessels,Peter C. Stair	1988	3

About J. Strane

J. Strane is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Ceramics and Composites and Electronic, Optical and Magnetic Materials, having authored 23 papers that have together received 531 indexed citations. Recurring topics across this work include Semiconductor materials and devices (11 papers), Semiconductor materials and interfaces (8 papers), Silicon and Solar Cell Technologies (7 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers), Metal and Thin Film Mechanics (3 papers), Copper Interconnects and Reliability (3 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Advancements in Photolithography Techniques (2 papers). The work is most often cited by research in Structural Biology (19 citations), Electrical and Electronic Engineering (401 citations), Surfaces, Coatings and Films (42 citations), Atomic and Molecular Physics, and Optics (168 citations) and Materials Chemistry (209 citations). J. Strane has collaborated with scholars based in United States, South Africa and Canada. Frequent co-authors include J. W. Mayer, S. T. Picraux, H. J. Stein, J. Watanabe, S. R. Lee, Barney L. Doyle, Stephen W. Russell, David E. Luzzi, M. I. Buckett and Laurence D. Marks. Their work appears in journals such as Journal of Applied Physics, Ultramicroscopy, Applied Physics Letters, Japanese Journal of Applied Physics and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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