J. Strane

945 total citations
23 papers, 531 citations indexed

About

J. Strane is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Strane has authored 23 papers receiving a total of 531 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in J. Strane's work include Semiconductor materials and devices (11 papers), Semiconductor materials and interfaces (8 papers) and Silicon and Solar Cell Technologies (7 papers). J. Strane is often cited by papers focused on Semiconductor materials and devices (11 papers), Semiconductor materials and interfaces (8 papers) and Silicon and Solar Cell Technologies (7 papers). J. Strane collaborates with scholars based in United States, South Africa and Canada. J. Strane's co-authors include J. W. Mayer, S. T. Picraux, H. J. Stein, J. Watanabe, S. R. Lee, Barney L. Doyle, Stephen W. Russell, David E. Luzzi, M. I. Buckett and Laurence D. Marks and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

J. Strane

22 papers receiving 506 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Strane United States	9	401	209	168	72	68	23	531
Hideo Sunami Japan	12	452 1.1×	190 0.9×	137 0.8×	63 0.9×	51 0.8×	40	566
W.A.M. Aarnink Netherlands	12	254 0.6×	218 1.0×	195 1.2×	112 1.6×	84 1.2×	22	592
Seijiro Furukawa Japan	14	429 1.1×	227 1.1×	207 1.2×	70 1.0×	56 0.8×	37	560
F. Legoues United States	10	266 0.7×	145 0.7×	192 1.1×	60 0.8×	38 0.6×	14	493
F. Pierre France	11	214 0.5×	183 0.9×	151 0.9×	83 1.2×	41 0.6×	43	412
L. M. Sorokin Russia	12	324 0.8×	240 1.1×	206 1.2×	65 0.9×	27 0.4×	92	539
C. Doland United States	13	414 1.0×	272 1.3×	173 1.0×	29 0.4×	61 0.9×	25	554
M. A. Shahid United Kingdom	11	390 1.0×	231 1.1×	311 1.9×	41 0.6×	43 0.6×	38	614
Norio Hirashita Japan	16	814 2.0×	235 1.1×	198 1.2×	76 1.1×	36 0.5×	56	945
M. Baleva Bulgaria	14	348 0.9×	369 1.8×	208 1.2×	71 1.0×	39 0.6×	67	555

Countries citing papers authored by J. Strane

Since Specialization

Citations

This map shows the geographic impact of J. Strane's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Strane with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Strane more than expected).

Fields of papers citing papers by J. Strane

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Strane. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Strane. The network helps show where J. Strane may publish in the future.

Co-authorship network of co-authors of J. Strane

This figure shows the co-authorship network connecting the top 25 collaborators of J. Strane. A scholar is included among the top collaborators of J. Strane based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Strane. J. Strane is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Liu, Chi‐Chun, Vinayak Rastogi, Nihar Mohanty, et al.. (2015). Fin formation using graphoepitaxy DSA for FinFET device fabrication. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9423. 94230S–94230S. 8 indexed citations

Hook, Terence B., F. Allibert, Karthik Balakrishnan, et al.. (2014). SOI FinFET versus bulk FinFET for 10nm and below. 1–3. 8 indexed citations

Zhang, John H., J. Strane, Laertis Economikos, et al.. (2011). Optimizing Stressor Film Deposition Sequence in Polish Rate Order for Best Planarization. MRS Proceedings. 1335. 1 indexed citations

Cai, Ming, B. Greene, J. Strane, et al.. (2008). Extending dual stress liner process to high performance 32nm node SOI CMOS manufacturing. 17–18. 2 indexed citations

Besser, Paul R., C. Lavoie, Ahmet S. Özcan, et al.. (2007). Ni–Pt silicide formation through Ti mediating layers. Microelectronic Engineering. 84(11). 2511–2516. 2 indexed citations

Divakaruni, R., C. Radens, Michael Belyansky, et al.. (2004). Technologies for scaling vertical transistor DRAM cells to 70 nm. 59–60. 3 indexed citations

Wu, Qiang, et al.. (2002). Ultrafast wafer alignment simulation based on thin film theory. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4689. 364–364. 5 indexed citations

Lee, Hosun, S. R. Kurtz, Jerrold A. Floro, et al.. (1995). Optical Characterization of Si_1-xC_x/Si ( 0≤x≤0.014) Semiconductor Alloys. Japanese Journal of Applied Physics. 34(10B). L1340–L1340. 10 indexed citations

Menéndez, J., et al.. (1995). Raman spectroscopy study of microscopic strain in epitaxial Si1−x−yGexCy alloys. Applied Physics Letters. 66(10). 1160–1162. 37 indexed citations

10.

Russell, Stephen W., et al.. (1994). Reaction kinetics in the Ti/SiO2 system and Ti thickness dependence on reaction rate. Journal of Applied Physics. 76(1). 257–263. 42 indexed citations

11.

Strane, J., H. J. Stein, S. R. Lee, et al.. (1994). Precipitation and relaxation in strained Si1−yCy/Si heterostructures. Journal of Applied Physics. 76(6). 3656–3668. 105 indexed citations

12.

Strane, J., et al.. (1993). Amorphous Carbon as a Diffusion Barrier to Copper. MRS Proceedings. 309. 3 indexed citations

13.

Strane, J., et al.. (1993). Stability And Precipitation Kinetics In Si_1-yC_y/Si and Si_1-x-yGe_xC/Si Heterostructures Prepared by Solid Phase Epitaxy. MRS Proceedings. 321. 4 indexed citations

14.

Strane, J., et al.. (1993). Metastable SiGeC formation by solid phase epitaxy. Applied Physics Letters. 63(20). 2786–2788. 103 indexed citations

15.

Strane, J., et al.. (1992). Metastable Sic and SiGeC Alloys by Carbon Implantation and Solid Phase Epitaxy. MRS Proceedings. 280. 5 indexed citations

16.

Li, Jian, J. Strane, Stephen W. Russell, et al.. (1992). The Formation of TiN-Encapsulated Cu Interconnects. MRS Proceedings. 260.

17.

Li, Jian, J. Strane, Stephen W. Russell, et al.. (1992). Observation and prediction of first phase formation in binary Cu-metal thin films. Journal of Applied Physics. 72(7). 2810–2816. 48 indexed citations

18.

Buckett, M. I., et al.. (1989). Electron irradiation damage in oxides. Ultramicroscopy. 29(1-4). 217–227. 56 indexed citations

19.

Strane, J., et al.. (1988). Encapsulation, diffusion and diet in the electron microscope. Ultramicroscopy. 25(3). 253–257. 21 indexed citations

20.

Luzzi, David E., Laurence D. Marks, M. I. Buckett, et al.. (1988). HREM In-Situ Studies of Electron Irradiation Effects in Oxides. MRS Proceedings. 100. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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