A. Pério

725 total citations
28 papers, 590 citations indexed

About

A. Pério is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, A. Pério has authored 28 papers receiving a total of 590 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 8 papers in Biomedical Engineering. Recurrent topics in A. Pério's work include Silicon and Solar Cell Technologies (14 papers), Semiconductor materials and interfaces (12 papers) and Thin-Film Transistor Technologies (12 papers). A. Pério is often cited by papers focused on Silicon and Solar Cell Technologies (14 papers), Semiconductor materials and interfaces (12 papers) and Thin-Film Transistor Technologies (12 papers). A. Pério collaborates with scholars based in France and Germany. A. Pério's co-authors include F. Arnaud d’Avitaya, Y. Campidelli, J. A. Chroboczek, G. Bomchil, J.C. Oberlin, R. Hérino, K. Barla, D. Bensahel, P. A. Badoz and G. Auvert and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. Pério

27 papers receiving 534 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. Pério France	12	379	320	272	161	97	28	590
H. Oppolzer Germany	15	511 1.3×	276 0.9×	315 1.2×	65 0.4×	79 0.8×	41	688
E. Lugujjo United States	10	360 0.9×	212 0.7×	217 0.8×	85 0.5×	117 1.2×	15	539
A. H. Reader Netherlands	13	383 1.0×	390 1.2×	197 0.7×	73 0.5×	62 0.6×	32	594
E. Mateeva United States	12	305 0.8×	274 0.9×	256 0.9×	108 0.7×	29 0.3×	25	525
M. A. Shahid United Kingdom	11	390 1.0×	311 1.0×	231 0.8×	83 0.5×	43 0.4×	38	614
Morio Inoue Japan	11	536 1.4×	165 0.5×	252 0.9×	65 0.4×	45 0.5×	55	620
M. Harry United Kingdom	10	806 2.1×	855 2.7×	382 1.4×	134 0.8×	53 0.5×	19	1.1k
E.A. Stach United States	9	290 0.8×	278 0.9×	238 0.9×	154 1.0×	43 0.4×	28	597
Robert G. Long United States	10	342 0.9×	476 1.5×	118 0.4×	49 0.3×	29 0.3×	17	560
M. Kusaka Japan	12	375 1.0×	367 1.1×	137 0.5×	89 0.6×	31 0.3×	84	602

Countries citing papers authored by A. Pério

Since Specialization

Citations

This map shows the geographic impact of A. Pério's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Pério with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Pério more than expected).

Fields of papers citing papers by A. Pério

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Pério. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Pério. The network helps show where A. Pério may publish in the future.

Co-authorship network of co-authors of A. Pério

This figure shows the co-authorship network connecting the top 25 collaborators of A. Pério. A scholar is included among the top collaborators of A. Pério based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Pério. A. Pério is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Dutartre, D., et al.. (1994). Fabrication of relaxed Si1−xGex layers on Si substrates by rapid thermal chemical vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 12(4). 1009–1014. 30 indexed citations

Haond, M., et al.. (1993). A comparative study of TiSi2 obtained by solid-state reaction and chemical vapor deposition. Applied Surface Science. 73. 25–30. 9 indexed citations

Dutartre, D., et al.. (1993). Epitaxy and doping of Si and Si1−xGex at low temperature by rapid thermal chemical vapor deposition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(3). 1134–1139. 14 indexed citations

Halimaoui, A., et al.. (1992). Silicon on Insulator Structures Obtained by Epitaxial Growth of Silicon over Porous Silicon. Journal of The Electrochemical Society. 139(12). 3595–3599. 8 indexed citations

d’Avitaya, F. Arnaud, A. Pério, J.C. Oberlin, Y. Campidelli, & J. A. Chroboczek. (1989). Fabrication and structure of epitaxial Er silicide films on (111) Si. Applied Physics Letters. 54(22). 2198–2200. 100 indexed citations

Grob, A., Jean‐Jacques Grob, A. Pério, Philippe Thévenin, & P. Siffert. (1989). Defects Produced by High Energy Oxygen Ions Implanted in Silicon. MRS Proceedings. 147. 1 indexed citations

Halimaoui, A., J.L. Regolini, R. Hérino, et al.. (1989). Epitaxial silicon growth on porous silicon by reduced pressure, low temperature chemical vapour deposition. Materials Science and Engineering B. 4(1-4). 435–439. 10 indexed citations

Vescan, L., G. Bomchil, A. Halimaoui, A. Pério, & R. Hérino. (1988). Low-pressure vapor-phase epitaxy of silicon on porous silicon. Materials Letters. 7(3). 94–98. 10 indexed citations

Regolini, J.L., D. Bensahel, Y. I. Nissim, et al.. (1988). Silicon epitaxy at low temperature, using UV cleaning in a reduced pressure CVD system. Electronics Letters. 24(7). 408–409. 7 indexed citations

10.

Torrès, J., et al.. (1988). Phosphorus redistribution in a WSi2/polycrystalline-silicon gate structure during furnace annealing. Journal of Applied Physics. 63(3). 732–742. 9 indexed citations

11.

Maex, Karen, Luc Van den hove, J.C. Oberlin, et al.. (1987). Redistribution of dopants during silicide formation - relevance of silicide diffusion versus main moving species. 42(236). 95–97. 1 indexed citations

12.

Crean, G.M., A. Golański, J.C. Oberlin, & A. Pério. (1987). Correlation between the elastic and structural properties of thin-film tungsten silicide layers from surface acoustic wave analysis. Applied Physics Letters. 51(20). 1591–1593. 1 indexed citations

13.

Golański, A., et al.. (1986). Influence of oxygen implantation conditions on the properties of a high-temperature-annealed silicon-on-insulator material. Applied Physics Letters. 49(21). 1423–1425. 12 indexed citations

14.

Torrès, J., A. Pério, R. Pantel, Y. Campidelli, & F. Arnaud d’Avitaya. (1985). Growth of thin films of refractory silicides on Si(100) in ultrahigh vacuum. Thin Solid Films. 126(3-4). 233–239. 5 indexed citations

15.

Hérino, R., A. Pério, K. Barla, & G. Bomchil. (1984). Microstructure of Porous silicon and its evolution with temperature. Materials Letters. 2(6). 519–523. 95 indexed citations

16.

Vu, D.P., et al.. (1983). Fast processing of 4 in silicon wafers using two 150 W halogen lamps. Electronics Letters. 19(1). 4–6. 2 indexed citations

17.

Bensahel, D., G. Auvert, A. Pério, et al.. (1983). Impurity segregation during explosive crystallization of amorphous silicon. Journal of Applied Physics. 54(6). 3485–3488. 11 indexed citations

18.

Vu, D.P., et al.. (1982). Electrical properties and grain size of phosphorus i n s i t u doped and cw laser annealed polycrystalline silicon films. Journal of Applied Physics. 53(7). 5086–5092. 2 indexed citations

19.

Bomchil, G., D. Bensahel, A. Golański, et al.. (1982). Formation kinetics of MoSi2 induced by cw scanned laser beam. Applied Physics Letters. 41(1). 46–48. 14 indexed citations

20.

Auvert, G., D. Bensahel, A. Pério, Van–Thuc Nguyen, & G. A. Rozgonyi. (1981). Explosive crystallization of a-Si films in both the solid and liquid phases. Applied Physics Letters. 39(9). 724–726. 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact