A. Pério

725 citations

28 papers · 590 indexed · h-index 12

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
- Surface and Thin Film Phenomena
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies

Papers in ⓘ

Electrical and Electronic Engineering 25
- Silicon and Solar Cell Technologies 14
- Thin-Film Transistor Technologies 12
- Semiconductor materials and devices 10
Atomic and Molecular Physics, and Optics 13
- Semiconductor materials and interfaces 12
- Surface and Thin Film Phenomena 5

Co-authors: F. Arnaud d’Avitaya (5 shared papers)Y. Campidelli (4 shared papers)G. Bomchil (7 shared papers)J. A. Chroboczek (3 shared papers)J.C. Oberlin (4 shared papers)R. Hérino (3 shared papers)K. Barla (1 shared paper)D. Bensahel (8 shared papers)
Journals: Applied Physics Letters (6 papers)Journal of Applied Physics (4 papers)Applied Surface Science (3 papers)Thin Solid Films (3 papers)Electronics Letters (2 papers)
Partner nations: France Germany

In The Last Decade

A. Pério

27 papers receiving 534 citations

Peers

Countries citing papers authored by A. Pério

Since Specialization

Citations

This map shows the geographic impact of A. Pério's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Pério with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Pério more than expected).

Fields of papers citing papers by A. Pério

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Pério. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Pério. The network helps show where A. Pério may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Pério, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Pério Line = papers co-authored together A. Pério links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 28 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Fabrication and structure of epitaxial Er silicide films on (111) Si Applied Physics Letters ·F. Arnaud d’Avitaya, A. Pério, J.C. Oberlin, Y. Campidelli, J. A. Chroboczek	1989	100
2	Microstructure of Porous silicon and its evolution with temperature Materials Letters ·R. Hérino, A. Pério, K. Barla, G. Bomchil	1984	95
3	Explosive crystallization of a-Si films in both the solid and liquid phases Applied Physics Letters ·G. Auvert, D. Bensahel, A. Pério, Van–Thuc Nguyen, G. A. Rozgonyi	1981	65
4	Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties Applied Surface Science ·J. Y. Duboz, P. A. Badoz, A. Pério, J.C. Oberlin, F. Arnaud d’Avitaya, Y. Campidelli, J. A. Chroboczek	1989	58
5	Growth, characterization and electrical properties of epitaxial erbium silicide Thin Solid Films ·F. Arnaud d’Avitaya, P. A. Badoz, Y. Campidelli, J. A. Chroboczek, J. Y. Duboz, A. Pério, J. Pierre	1990	52
6	Fabrication of relaxed Si1−xGex layers on Si substrates by rapid thermal chemical vapor deposition Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·D. Dutartre, P. Warren, F. Provenier, Frederic Chollet, A. Pério	1994	30
7	High temperature oxygen implantation in silicon: Soil structure formation characteristics Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·S. Maillet, R. Stuck, J.J. Grob, A. Golański, R. Pantel, A. Pério	1987	25
8	Growth of MoSi2 with preferential orientation on (100) silicon Applied Physics Letters ·A. Pério, J. Torrès, G. Bomchil, F. Arnaud d’Avitaya, R. Pantel	1984	23
9	Thermal evolution of molybdenum disilicide grown on (100) silicon under ultrahigh vacuum conditions Journal of Applied Physics ·A. Pério, J. Torrès	1986	18
10	Formation kinetics of MoSi2 induced by cw scanned laser beam Applied Physics Letters ·G. Bomchil, D. Bensahel, A. Golański, F. Ferrieu, G. Auvert, A. Pério, J. C. Pfister	1982	14
11	Epitaxy and doping of Si and Si1−xGex at low temperature by rapid thermal chemical vapor deposition Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·D. Dutartre, P. Warren, I. Sagnes, P. A. Badoz, A. Pério, Julien Dupuis, G. Prudon	1993	14
12	Influence of oxygen implantation conditions on the properties of a high-temperature-annealed silicon-on-insulator material Applied Physics Letters ·A. Golański, A. Pério, J.J. Grob, R. Stuck, S. Maillet, E. Clavelier	1986	12
13	Impurity segregation during explosive crystallization of amorphous silicon Journal of Applied Physics ·D. Bensahel, G. Auvert, A. Pério, J. C. Pfister, A. Izraël, P. Hénoc	1983	11
14	Low-pressure vapor-phase epitaxy of silicon on porous silicon Materials Letters ·L. Vescan, G. Bomchil, A. Halimaoui, A. Pério, R. Hérino	1988	10
15	Epitaxial silicon growth on porous silicon by reduced pressure, low temperature chemical vapour deposition Materials Science and Engineering B ·C. Oules, A. Halimaoui, J.L. Regolini, R. Hérino, A. Pério, D. Bensahel, G. Bomchil	1989	10
16	Phosphorus redistribution in a WSi2/polycrystalline-silicon gate structure during furnace annealing Journal of Applied Physics ·J. Torrès, Ο. Thomas, D. Jourdain, R. Madar, A. Pério, J.P. Sénateur	1988	9
17	A comparative study of TiSi2 obtained by solid-state reaction and chemical vapor deposition Applied Surface Science ·Ph. Gouy-Pailler, M. Haond, D. Mathiot, M. Gauneau, A. Pério, J.L. Regolini	1993	9
18	Silicon on Insulator Structures Obtained by Epitaxial Growth of Silicon over Porous Silicon Journal of The Electrochemical Society ·C. Oules, A. Halimaoui, J.L. Regolini, A. Pério, G. Bomchil	1992	8
19	Silicon epitaxy at low temperature, using UV cleaning in a reduced pressure CVD system Electronics Letters ·J.L. Regolini, D. Bensahel, Y. I. Nissim, J. Mercier, E. Scheid, A. Pério, E. André	1988	7
20	Growth of thin films of refractory silicides on Si(100) in ultrahigh vacuum Thin Solid Films ·J. Torrès, A. Pério, R. Pantel, Y. Campidelli, F. Arnaud d’Avitaya	1985	5

About A. Pério

A. Pério is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Mechanical Engineering, having authored 28 papers that have together received 590 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (14 papers), Thin-Film Transistor Technologies (12 papers), Semiconductor materials and interfaces (12 papers), Semiconductor materials and devices (10 papers), Silicon Nanostructures and Photoluminescence (7 papers), Nanowire Synthesis and Applications (5 papers), Surface and Thin Film Phenomena (5 papers) and Intermetallics and Advanced Alloy Properties (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (320 citations), Electrical and Electronic Engineering (379 citations), Materials Chemistry (272 citations), Computational Mechanics (97 citations) and Surfaces, Coatings and Films (31 citations). A. Pério has collaborated with scholars based in France and Germany. Frequent co-authors include F. Arnaud d’Avitaya, Y. Campidelli, G. Bomchil, J. A. Chroboczek, J.C. Oberlin, R. Hérino, K. Barla, D. Bensahel, P. A. Badoz and G. Auvert. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Applied Surface Science, Thin Solid Films and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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