C. Overgaard

1.1k total citations
19 papers, 905 citations indexed

About

C. Overgaard is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C. Overgaard has authored 19 papers receiving a total of 905 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in C. Overgaard's work include Semiconductor materials and devices (18 papers), Electronic and Structural Properties of Oxides (15 papers) and Ferroelectric and Piezoelectric Materials (8 papers). C. Overgaard is often cited by papers focused on Semiconductor materials and devices (18 papers), Electronic and Structural Properties of Oxides (15 papers) and Ferroelectric and Piezoelectric Materials (8 papers). C. Overgaard collaborates with scholars based in United States and Canada. C. Overgaard's co-authors include Zhiyi Yu, K. Eisenbeiser, J. Finder, J. Curless, W. J. Ooms, Ravi Droopad, J. Ramdani, J. A. Hallmark, R. Droopad and M. Passlack and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and Thin Solid Films.

In The Last Decade

C. Overgaard

19 papers receiving 873 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Overgaard United States 14 777 699 187 135 60 19 905
L. Lamagna Italy 18 642 0.8× 468 0.7× 104 0.6× 126 0.9× 57 0.9× 45 729
Y. J. Lee Taiwan 14 556 0.7× 362 0.5× 167 0.9× 171 1.3× 52 0.9× 28 667
W. J. Ooms United States 15 823 1.1× 744 1.1× 125 0.7× 226 1.7× 59 1.0× 22 989
Toshihiko Toyama Japan 18 764 1.0× 744 1.1× 50 0.3× 80 0.6× 90 1.5× 62 873
J. Finder United States 16 839 1.1× 964 1.4× 272 1.5× 112 0.8× 227 3.8× 24 1.1k
Laegu Kang United States 12 1.3k 1.6× 509 0.7× 146 0.8× 149 1.1× 43 0.7× 27 1.3k
O. Seifarth Germany 14 282 0.4× 356 0.5× 177 0.9× 78 0.6× 27 0.5× 25 487
J. A. Hallmark United States 11 539 0.7× 448 0.6× 72 0.4× 157 1.2× 40 0.7× 22 641
M. Badylevich Belgium 11 395 0.5× 355 0.5× 58 0.3× 171 1.3× 75 1.3× 25 513
Christoph Henkel Austria 17 528 0.7× 370 0.5× 82 0.4× 176 1.3× 101 1.7× 46 652

Countries citing papers authored by C. Overgaard

Since Specialization
Citations

This map shows the geographic impact of C. Overgaard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Overgaard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Overgaard more than expected).

Fields of papers citing papers by C. Overgaard

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Overgaard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Overgaard. The network helps show where C. Overgaard may publish in the future.

Co-authorship network of co-authors of C. Overgaard

This figure shows the co-authorship network connecting the top 25 collaborators of C. Overgaard. A scholar is included among the top collaborators of C. Overgaard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Overgaard. C. Overgaard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Yu, Zhiyi, Yong Liang, C. Overgaard, et al.. (2004). Advances in heteroepitaxy of oxides on silicon. Thin Solid Films. 462-463. 51–56. 62 indexed citations
2.
Droopad, Ravi, Zhiyi Yu, Hao Li, et al.. (2003). Development of integrated heterostructures on silicon by MBE. Journal of Crystal Growth. 251(1-4). 638–644. 63 indexed citations
3.
Yu, Zhiyi, C. Overgaard, Ravi Droopad, M. Passlack, & J. Abrokwah. (2003). Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy. Applied Physics Letters. 82(18). 2978–2980. 65 indexed citations
4.
Passlack, M., et al.. (2003). Thermally induced oxide crystallinity and interface destruction in Ga2O3–GaAs structures. Applied Physics Letters. 82(11). 1691–1693. 18 indexed citations
5.
Eisenbeiser, K., Ravi Droopad, Zhiyi Yu, et al.. (2003). Crystalline oxide-based devices on silicon substrates. Journal of Electronic Materials. 32(8). 868–871. 7 indexed citations
6.
Ogryzlo, E. A., et al.. (2002). Passivation of defects at the SrTiO3/Si interface with H and H2. Applied Physics Letters. 80(15). 2699–2700. 2 indexed citations
7.
Yu, Zhiyi, Yong Liang, Hua Li, et al.. (2002). Progress in Epitaxial Oxides on Semiconductors. MRS Proceedings. 747. 2 indexed citations
8.
Eisenbeiser, K., R. Emrick, Ravi Droopad, et al.. (2002). GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer. IEEE Electron Device Letters. 23(6). 300–302. 70 indexed citations
9.
Passlack, M., J. Abrokwah, Ravi Droopad, et al.. (2002). Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor. IEEE Electron Device Letters. 23(9). 508–510. 70 indexed citations
10.
Droopad, Ravi, Zhiyi Yu, J. Ramdani, et al.. (2001). Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy. Materials Science and Engineering B. 87(3). 292–296. 35 indexed citations
11.
Droopad, Ravi, Zhiyi Yu, J. Ramdani, et al.. (2001). Epitaxial oxides on silicon grown by molecular beam epitaxy. Journal of Crystal Growth. 227-228. 936–943. 26 indexed citations
12.
Yu, Zhiyi, J. Ramdani, J. Curless, et al.. (2000). Epitaxial oxide thin films on Si(001). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(4). 2139–2145. 98 indexed citations
13.
Ramdani, J., Ravi Droopad, Zhiyi Yu, et al.. (2000). Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy. Applied Surface Science. 159-160. 127–133. 33 indexed citations
14.
Yu, Zhiyi, J. Ramdani, J. Curless, et al.. (2000). Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(3). 1653–1657. 61 indexed citations
15.
Eisenbeiser, K., J. Finder, Zhiping Yu, et al.. (2000). Field effect transistors with SrTiO3 gate dielectric on Si. Applied Physics Letters. 76(10). 1324–1326. 243 indexed citations
16.
Passlack, M., Zhiyi Yu, Ravi Droopad, et al.. (1999). Interface charge and nonradiative carrier recombination in Ga2O3–GaAs interface structures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(1). 49–52. 16 indexed citations
17.
Yu, Zhiyi, Ravi Droopad, J. Ramdani, et al.. (1999). Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy. MRS Proceedings. 567. 24 indexed citations
18.
Yu, Zhiyi, Ravi Droopad, J. Ramdani, et al.. (1999). Epitaxial BaTiO3 films on silicon for MFSFET applications. Integrated ferroelectrics. 27(1-4). 41–50. 9 indexed citations
19.
Passlack, M., et al.. (1998). Nonradiative recombination at GaAs homointerfaces fabricated using an As cap deposition/removal process. Applied Physics Letters. 72(24). 3163–3165. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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