G. B. Rayner

1.3k total citations
35 papers, 1.1k citations indexed

About

G. B. Rayner is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. B. Rayner has authored 35 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. B. Rayner's work include Semiconductor materials and devices (27 papers), Electronic and Structural Properties of Oxides (11 papers) and Semiconductor materials and interfaces (8 papers). G. B. Rayner is often cited by papers focused on Semiconductor materials and devices (27 papers), Electronic and Structural Properties of Oxides (11 papers) and Semiconductor materials and interfaces (8 papers). G. B. Rayner collaborates with scholars based in United States, Taiwan and Belgium. G. B. Rayner's co-authors include G. Lucovsky, Dongkyun Kang, Yuh-Chen Lin, Aaron D. Franklin, Katherine Price, Sayeef Salahuddin, Felicia McGuire, Sourabh Khandelwal, Suman Datta and Steven M. George and has published in prestigious journals such as Nature Communications, Nano Letters and Applied Physics Letters.

In The Last Decade

G. B. Rayner

35 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. B. Rayner United States 17 908 676 182 122 75 35 1.1k
M. Eddrief France 16 483 0.5× 516 0.8× 221 1.2× 153 1.3× 47 0.6× 33 781
Rama I. Hegde United States 15 809 0.9× 436 0.6× 109 0.6× 126 1.0× 45 0.6× 34 935
K. J. Hubbard United States 5 976 1.1× 678 1.0× 187 1.0× 188 1.5× 40 0.5× 6 1.1k
Edmund P. Burte Germany 16 812 0.9× 346 0.5× 154 0.8× 144 1.2× 92 1.2× 132 971
V. V. Afanas’ev Belgium 16 1.3k 1.4× 861 1.3× 509 2.8× 147 1.2× 99 1.3× 48 1.6k
R. Gregory United States 18 988 1.1× 542 0.8× 164 0.9× 162 1.3× 60 0.8× 46 1.1k
R. Nieh United States 23 2.2k 2.4× 779 1.2× 237 1.3× 235 1.9× 43 0.6× 43 2.3k
Laegu Kang United States 12 1.3k 1.4× 509 0.8× 149 0.8× 146 1.2× 43 0.6× 27 1.3k
G. Pavia Italy 12 495 0.5× 358 0.5× 127 0.7× 89 0.7× 63 0.8× 46 658
Mustapha Diani Morocco 18 500 0.6× 506 0.7× 139 0.8× 89 0.7× 46 0.6× 74 800

Countries citing papers authored by G. B. Rayner

Since Specialization
Citations

This map shows the geographic impact of G. B. Rayner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. B. Rayner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. B. Rayner more than expected).

Fields of papers citing papers by G. B. Rayner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. B. Rayner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. B. Rayner. The network helps show where G. B. Rayner may publish in the future.

Co-authorship network of co-authors of G. B. Rayner

This figure shows the co-authorship network connecting the top 25 collaborators of G. B. Rayner. A scholar is included among the top collaborators of G. B. Rayner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. B. Rayner. G. B. Rayner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rayner, G. B., Bangzhi Liu, Jeffrey R. Shallenberger, et al.. (2025). Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 43(2). 2 indexed citations
2.
Torsi, Riccardo, Ke Wang, Jessica Kachian, et al.. (2024). Tailoring amorphous boron nitride for high-performance two-dimensional electronics. Nature Communications. 15(1). 4016–4016. 14 indexed citations
3.
Kirtania, Sharadindu Gopal, Md Abdullah Al Mamun, Sunbin Deng, et al.. (2024). On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET. 1–2. 7 indexed citations
4.
He, Fan, Bangzhi Liu, Yongtao Liu, et al.. (2023). High field dielectric response in κ-Ga2O3 films. Journal of Applied Physics. 134(20). 3 indexed citations
5.
Sarney, Wendy L., G. B. Rayner, Glen R. Fox, et al.. (2022). Plasma enhanced atomic layer deposition of textured aluminum nitride on platinized substrates for MEMS. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 40(4). 10 indexed citations
6.
Ni, Kai, J. A. Smith, Huacheng Ye, et al.. (2019). A Novel Ferroelectric Superlattice Based Multi-Level Cell Non-Volatile Memory. 28.8.1–28.8.4. 45 indexed citations
7.
Shah, Dhruv, et al.. (2018). Tutorial on interpreting x-ray photoelectron spectroscopy survey spectra: Questions and answers on spectra from the atomic layer deposition of Al2O3 on silicon. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 36(6). 57 indexed citations
8.
Zheng, Yuanxia, Jason Lapano, G. B. Rayner, & Roman Engel‐Herbert. (2018). Native oxide removal from Ge surfaces by hydrogen plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 36(3). 3 indexed citations
9.
Schulte‐Braucks, C., Redwan N. Sajjad, R. Ghosh, et al.. (2017). Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors. IEEE Transactions on Electron Devices. 64(10). 4354–4362. 26 indexed citations
10.
Zheng, Yuanxia, Ashish Kumar Agrawal, G. B. Rayner, et al.. (2015). <italic>In Situ</italic> Process Control of Trilayer Gate-Stacks on p-Germanium With 0.85-nm EOT. IEEE Electron Device Letters. 36(9). 881–883. 10 indexed citations
11.
12.
Barth, Michael, G. B. Rayner, Stephen McDonnell, et al.. (2014). High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness. Applied Physics Letters. 105(22). 19 indexed citations
13.
Rayner, G. B. & Steven M. George. (2009). Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 27(4). 716–724. 19 indexed citations
14.
15.
Rayner, G. B., Dongkyun Kang, & G. Lucovsky. (2003). Spectroscopic study of chemical phase separation in zirconium silicate alloys. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(4). 1783–1791. 53 indexed citations
16.
Lucovsky, G., et al.. (2002). Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(4). 1739–1747. 39 indexed citations
17.
Rayner, G. B., et al.. (2002). Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(4). 1748–1758. 81 indexed citations
18.
Lucovsky, G., G. B. Rayner, Dongkyun Kang, et al.. (2001). Electronic structure of noncrystalline transition metal silicate and aluminate alloys. Applied Physics Letters. 79(12). 1775–1777. 61 indexed citations
19.
Lucovsky, G., G. B. Rayner, & R. S. Johnson. (2001). Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. Microelectronics Reliability. 41(7). 937–945. 12 indexed citations
20.
Lucovsky, G. & G. B. Rayner. (2000). Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys. Applied Physics Letters. 77(18). 2912–2914. 148 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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