S. Siddiqui

809 total citations
18 papers, 151 citations indexed

About

S. Siddiqui is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, S. Siddiqui has authored 18 papers receiving a total of 151 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 4 papers in Electronic, Optical and Magnetic Materials and 4 papers in Biomedical Engineering. Recurrent topics in S. Siddiqui's work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Copper Interconnects and Reliability (4 papers). S. Siddiqui is often cited by papers focused on Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Copper Interconnects and Reliability (4 papers). S. Siddiqui collaborates with scholars based in United States, Germany and Switzerland. S. Siddiqui's co-authors include C.‐K. Hu, D. Canaperi, Praneet Adusumilli, V. Kamineni, Min Dai, M. Chudzik, Frank W. Mont, Vijay Narayanan, R. Patlolla and T. Spooner and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Microelectronic Engineering.

In The Last Decade

S. Siddiqui

17 papers receiving 144 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Siddiqui United States 7 137 38 32 31 22 18 151
L. Prabhu United States 10 242 1.8× 15 0.4× 27 0.8× 72 2.3× 28 1.3× 17 256
C. Arvet France 10 223 1.6× 61 1.6× 24 0.8× 44 1.4× 23 1.0× 28 230
S.L. Shue Taiwan 7 116 0.8× 26 0.7× 79 2.5× 48 1.5× 26 1.2× 21 143
Rusty Harris United States 10 299 2.2× 32 0.8× 19 0.6× 64 2.1× 32 1.5× 27 313
B. Krist United States 6 108 0.8× 12 0.3× 50 1.6× 15 0.5× 22 1.0× 8 124
A. Opdebeeck Belgium 4 119 0.9× 26 0.7× 8 0.3× 33 1.1× 21 1.0× 4 130
Frédéric Morancho France 11 351 2.6× 19 0.5× 32 1.0× 35 1.1× 33 1.5× 45 379
Stefan Moench Germany 12 292 2.1× 31 0.8× 65 2.0× 40 1.3× 35 1.6× 38 347
U. Kwon United States 9 121 0.9× 23 0.6× 59 1.8× 34 1.1× 87 4.0× 21 193
Robert R. Robison United States 7 111 0.8× 19 0.5× 27 0.8× 22 0.7× 40 1.8× 16 126

Countries citing papers authored by S. Siddiqui

Since Specialization
Citations

This map shows the geographic impact of S. Siddiqui's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Siddiqui with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Siddiqui more than expected).

Fields of papers citing papers by S. Siddiqui

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Siddiqui. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Siddiqui. The network helps show where S. Siddiqui may publish in the future.

Co-authorship network of co-authors of S. Siddiqui

This figure shows the co-authorship network connecting the top 25 collaborators of S. Siddiqui. A scholar is included among the top collaborators of S. Siddiqui based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Siddiqui. S. Siddiqui is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Tseng, Wei‐Tsu, et al.. (2024). Post Tungsten CMP Cleaning: Optimization for Cleaning Efficiency and Corrosion Reduction. ECS Journal of Solid State Science and Technology. 13(11). 114004–114004. 2 indexed citations
2.
Maxwell‐Armstrong, Charles, Mark Cheetham, Graham Branagan, et al.. (2023). Rectal cancer services – is it time for specialization within units?. Colorectal Disease. 25(7). 1332–1335.
3.
Bhuiyan, Maruf, S. Siddiqui, J. Li, et al.. (2021). Gate-Last I/O Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic Technologies. 2021 IEEE International Electron Devices Meeting (IEDM). 1–4. 4 indexed citations
4.
Zhu, Meng, Balaji Kannan, Yibin Zhang, et al.. (2018). Study of Lanthanum Diffusion in HfO2-Based High-k Gate Stack. ECS Transactions. 85(8). 131–136. 4 indexed citations
5.
Mochizuki, Shinichi, Richard G. Southwick, J. Li, et al.. (2017). A comparative study of strain and Ge content in Si<inf>1−x</inf>Ge<inf>x</inf> channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs. 37.2.1–37.2.4. 20 indexed citations
6.
Siddiqui, S., et al.. (2017). Analysis of Caustic Soda of Different Manufacturers in Pakistan for Mercerization of Cotton Textiles. Mehran University Research Journal of Engineering and Technology. 36(4). 857–866. 1 indexed citations
7.
Siddiqui, S., Min Dai, R. K. Pandey, et al.. (2017). Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 35(1). 2 indexed citations
8.
Kelly, James J., Huai Huang, C.‐K. Hu, et al.. (2016). Experimental study of nanoscale Co damascene BEOL interconnect structures. 40–42. 43 indexed citations
9.
Peethala, B., Frank W. Mont, S. Molis, et al.. (2016). Impact of HF-based cleaning solutions on via resistance for sub-10 nm BEOL structures. Microelectronic Engineering. 161. 98–103. 4 indexed citations
11.
Srinivasan, P., Jody Fronheiser, S. Siddiqui, et al.. (2015). NBTI in Si<inf>0.5</inf>Ge<inf>0.5</inf> RMG gate stacks — Effect of high-k nitridation. 2F.5.1–2F.5.6. 3 indexed citations
12.
Chudzik, M., Sitaraman Krishnan, Min Dai, et al.. (2014). (Keynote) Atomic Layer Deposition Trends and Challenges in High-k/Metal Gate and Alternative Channel CMOS Processing. ECS Transactions. 60(1). 513–518. 6 indexed citations
13.
Dai, Min, Yanfeng Wang, J. Shepard, et al.. (2013). Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness. Journal of Applied Physics. 113(4). 21 indexed citations
14.
Dai, Min, Jinping Liu, Dechao Guo, et al.. (2011). A novel atomic layer oxidation technique for EOT scaling in gate-last high-&#x043A;/metal gate CMOS technology. 86. 28.5.1–28.5.4. 6 indexed citations
15.
Tirapu-Azpiroz, Jaione, et al.. (2009). Improving yield through the application of process window OPC. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7274. 727411–727411. 15 indexed citations
16.
Mogul, H. C., et al.. (2005). Characterization of Defect Formation during Ni Silicidation for CMOS Device Application. Microscopy and Microanalysis. 11(S02). 6 indexed citations
17.
Dalton, T., Nicholas Fuller, Catherine B. Labelle, et al.. (2004). Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing. 154–156. 1 indexed citations
18.
Siddiqui, S.. (1979). Studies of electrical properties of microchannel plates during and after high-temperature vacuum bakeout. IEEE Transactions on Electron Devices. 26(7). 1059–1064. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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