J. E. Greene

6.3k total citations
145 papers, 5.3k citations indexed

About

J. E. Greene is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Materials Chemistry. According to data from OpenAlex, J. E. Greene has authored 145 papers receiving a total of 5.3k indexed citations (citations by other indexed papers that have themselves been cited), including 89 papers in Electrical and Electronic Engineering, 65 papers in Mechanics of Materials and 55 papers in Materials Chemistry. Recurrent topics in J. E. Greene's work include Metal and Thin Film Mechanics (61 papers), Semiconductor materials and devices (59 papers) and Ion-surface interactions and analysis (39 papers). J. E. Greene is often cited by papers focused on Metal and Thin Film Mechanics (61 papers), Semiconductor materials and devices (59 papers) and Ion-surface interactions and analysis (39 papers). J. E. Greene collaborates with scholars based in United States, Sweden and Germany. J. E. Greene's co-authors include I. Petrov, Lars Hultman, J.‐E. Sundgren, A. H. Eltoukhy, Scott A. Barnett, J.‐E. Sundgren, W.‐D. Münz, D. Lubben, Grzegorz Greczyński and Daniel Gall and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. E. Greene

144 papers receiving 5.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. E. Greene United States	42	3.1k	3.0k	2.5k	1.1k	1.0k	145	5.3k
J. J. Cuomo United States	39	1.4k 0.5×	3.2k 1.1×	3.4k 1.4×	1.0k 0.9×	1.4k 1.3×	138	6.3k
D. M. Follstaedt United States	35	1.5k 0.5×	2.2k 0.7×	1.7k 0.7×	490 0.5×	1.2k 1.2×	150	4.2k
Akiyoshi Chayahara Japan	31	1.6k 0.5×	2.9k 1.0×	1.6k 0.6×	704 0.6×	691 0.7×	256	3.9k
J. M. E. Harper United States	39	1.9k 0.6×	1.8k 0.6×	3.5k 1.4×	686 0.6×	1.6k 1.5×	155	5.5k
J. A. Knapp United States	39	2.1k 0.7×	4.0k 1.3×	1.8k 0.7×	913 0.8×	2.9k 2.7×	165	7.1k
Jón Tómas Guðmundsson Iceland	46	5.4k 1.8×	4.2k 1.4×	5.6k 2.3×	1.1k 1.0×	1.0k 1.0×	169	8.1k
S. Anders United States	42	2.3k 0.8×	3.0k 1.0×	1.5k 0.6×	274 0.3×	2.9k 2.8×	114	5.9k
G. Dearnaley United Kingdom	33	999 0.3×	1.8k 0.6×	1.8k 0.7×	991 0.9×	718 0.7×	150	4.0k
M. Schreck Germany	34	1.5k 0.5×	4.0k 1.3×	1.9k 0.8×	496 0.5×	1.2k 1.1×	179	4.7k
J. Washburn United States	43	927 0.3×	2.7k 0.9×	3.7k 1.5×	586 0.5×	2.8k 2.7×	263	6.5k

Countries citing papers authored by J. E. Greene

Since Specialization

Citations

This map shows the geographic impact of J. E. Greene's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Greene with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Greene more than expected).

Fields of papers citing papers by J. E. Greene

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Greene. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Greene. The network helps show where J. E. Greene may publish in the future.

Co-authorship network of co-authors of J. E. Greene

This figure shows the co-authorship network connecting the top 25 collaborators of J. E. Greene. A scholar is included among the top collaborators of J. E. Greene based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. E. Greene. J. E. Greene is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Edström, D., Davide G. Sangiovanni, L. Hultman, et al.. (2019). TiN film growth on misoriented TiN grains with simultaneous low-energy bombardment: Restructuring leading to epitaxy. Thin Solid Films. 688. 137380–137380. 8 indexed citations

Greczyński, Grzegorz, Igor Zhirkov, I. Petrov, J. E. Greene, & Johanna Rosén. (2017). Control of the metal/gas ion ratio incident at the substrate plane during high-power impulse magnetron sputtering of transition metals in Ar. Thin Solid Films. 642. 36–40. 25 indexed citations

Greczyński, Grzegorz, Jun Lu, Olof Tengstrand, et al.. (2016). Nitrogen-doped bcc-Cr films: Combining ceramic hardness with metallic toughness and conductivity. Scripta Materialia. 122. 40–44. 51 indexed citations

Greczyński, Grzegorz, Jörg Patscheider, Jun Lu, et al.. (2015). Control of Ti1−xSixN nanostructure via tunable metal-ion momentum transfer during HIPIMS/DCMS co-deposition. Surface and Coatings Technology. 280. 174–184. 54 indexed citations

Sangiovanni, Davide G., D. Edström, L. Hultman, et al.. (2014). Ab initio and classical molecular dynamics simulations of N2 desorption from TiN(001) surfaces. Surface Science. 624. 25–31. 61 indexed citations

Kodambaka, Suneel, S. V. Khare, V. Petrova, et al.. (2003). Absolute orientation-dependent anisotropic TiN(111) island step energies and stiffnesses from shape fluctuation analyses. Physical review. B, Condensed matter. 67(3). 38 indexed citations

Gall, Daniel, M. Städele, Kenneth Järrendahl, et al.. (2001). Electronic structure of ScN determined using optical spectroscopy, photoemission, andab initiocalculations. Physical review. B, Condensed matter. 63(12). 140 indexed citations

Nostrand, J. E. Van, David G. Cahill, I. Petrov, & J. E. Greene. (1998). Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films. Journal of Applied Physics. 83(2). 1096–1102. 13 indexed citations

Kim, Y.-W., et al.. (1994). Epitaxial (GaAs)1−x(Si2)x metastable alloys on GaAs(001) and (GaAs)1−x(Si2)x /GaAs strained-layer superlattices: Crystal growth, spinodal decomposition, and antiphase domains. Journal of Applied Physics. 76(3). 1644–1655. 8 indexed citations

10.

Jansson, Ulf, J.‐O. Carlsson, L. C. Markert, & J. E. Greene. (1989). Phase-selective chemical vapor deposition of boron carbide by nucleation control on patterned substrates. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(6). 3172–3175. 7 indexed citations

11.

Ray, Mark, J. E. Baker, C.M. Loxton, & J. E. Greene. (1988). Quantitative analysis and depth profiling of rare gases in solids by secondary-ion mass spectrometry: Detection of (CsR)+ molecular ions (R=rare gas). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(1). 44–50. 61 indexed citations

12.

Greene, J. E., Teruaki Motooka, J.‐E. Sundgren, et al.. (1986). A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth. Journal of Crystal Growth. 79(1-3). 19–32. 25 indexed citations

13.

Lubben, D., Scott A. Barnett, Kazuhiro Suzuki, S. M. Gorbatkin, & J. E. Greene. (1985). Laser-induced plasmas for primary ion deposition of epitaxial Ge and Si films. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(4). 968–974. 101 indexed citations

14.

Rockett, Angus, Scott A. Barnett, & J. E. Greene. (1984). A low-energy, ultrahigh vacuum, solid-metal ion source for accelerated-ion doping during molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(3). 306–313. 28 indexed citations

15.

Bajor, G., et al.. (1982). Growth of high quality epitaxial Ge films on (100)Si by sputter deposition. Applied Physics Letters. 40(8). 696–698. 28 indexed citations

16.

Cadien, Ken, Mark Ray, Sangmun Shin, et al.. (1981). Ion Mixing During Film Deposition: Growth of Metastable Semiconducting and Metallic Alloys. MRS Proceedings. 7. 1 indexed citations

17.

Greene, J. E., et al.. (1981). Epitaxial Ge/GaAs heterostructures by scanned cw laser annealing of a-Ge layers on GaAs. Applied Physics Letters. 39(3). 232–234. 9 indexed citations

18.

Eltoukhy, A. H. & J. E. Greene. (1979). Compositionally modulated sputtered InSb/GaSb superlattices: Crystal growth and interlayer diffusion. Journal of Applied Physics. 50(1). 505–517. 46 indexed citations

19.

Barr, Tery L., L. B. Welsh, F. R. Szofran, J. E. Greene, & R. E. Klinger. (1978). Abstract: Surface studies of Y2O3 doped CeO2 and ZrO2 thin films. Journal of Vacuum Science and Technology. 15(2). 341–342. 4 indexed citations

20.

Greene, J. E. & C. E. Wickersham. (1976). Structural and electrical characteristics of InSb thin films grown by rf sputtering. Journal of Applied Physics. 47(8). 3630–3639. 43 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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