J. E. Greene

6.3k citations

145 papers · 5.3k indexed · h-index 42

Mechanics of Materials top 0.1%
- Metal and Thin Film Mechanics 61
Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 27
Materials Chemistry top 1%
- Diamond and Carbon-based Materials Research 20
Computational Mechanics top 0.5%
- Ion-surface interactions and analysis 39
Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices 59
- Silicon and Solar Cell Technologies 11
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 17
- Semiconductor Quantum Structures and Devices 14

Co-authors: I. Petrov Lars Hultman J.‐E. Sundgren A. H. Eltoukhy Scott A. Barnett W.‐D. Münz D. Lubben Grzegorz Greczyński
Cited by: Mechanics of Materials Condensed Matter Physics Materials Chemistry
Journals: Journal of Applied Physics (33 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (29 papers)Applied Physics Letters (16 papers)
Partner nations: United States Sweden Germany

In The Last Decade

J. E. Greene

144 papers receiving 5.1k citations

Peers

Countries citing papers authored by J. E. Greene

Since Specialization

Citations

This map shows the geographic impact of J. E. Greene's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Greene with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Greene more than expected).

Fields of papers citing papers by J. E. Greene

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Greene. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Greene. The network helps show where J. E. Greene may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. E. Greene, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. E. Greene Line = papers co-authored together J. E. Greene links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	TiN film growth on misoriented TiN grains with simultaneous low-energy bombardment: Restructuring leading to epitaxy Thin Solid Films ·D. Edström,Davide G. Sangiovanni,L. Hultman,I. Petrov,J. E. Greene,V. Chirita	2019	8
2	Control of the metal/gas ion ratio incident at the substrate plane during high-power impulse magnetron sputtering of transition metals in Ar Thin Solid Films ·Grzegorz Greczyński,Igor Zhirkov,I. Petrov,J. E. Greene,Johanna Rosén	2017	25
3	Nitrogen-doped bcc-Cr films: Combining ceramic hardness with metallic toughness and conductivity Scripta Materialia ·Grzegorz Greczyński,Jun Lu,Olof Tengstrand,I. Petrov,J. E. Greene,Lars Hultman	2016	51
4	Control of Ti1−xSixN nanostructure via tunable metal-ion momentum transfer during HIPIMS/DCMS co-deposition Surface and Coatings Technology ·Grzegorz Greczyński,Jörg Patscheider,Jun Lu,Björn Alling,Annop Ektarawong,Jens Jensen,I. Petrov,J. E. Greene,Lars Hultman	2015	54
5	Ab initio and classical molecular dynamics simulations of N2 desorption from TiN(001) surfaces Surface Science ·Davide G. Sangiovanni,D. Edström,L. Hultman,I. Petrov,J. E. Greene,V. Chirita	2014	61
6	Absolute orientation-dependent anisotropic TiN(111) island step energies and stiffnesses from shape fluctuation analyses Physical review. B, Condensed matter ·Suneel Kodambaka,S. V. Khare,V. Petrova,D. D. Johnson,I. Petrov,J. E. Greene	2003	38
7	Electronic structure of ScN determined using optical spectroscopy, photoemission, andab initiocalculations Physical review. B, Condensed matter ·Daniel Gall,M. Städele,Kenneth Järrendahl,I. Petrov,P. Desjardins,洋一小嶋,Taeyoon Lee,J. E. Greene	2001	140
8	Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films Journal of Applied Physics ·J. E. Van Nostrand,David G. Cahill,I. Petrov,J. E. Greene	1998	13
9	Epitaxial (GaAs)1−x(Si2)x metastable alloys on GaAs(001) and (GaAs)1−x(Si2)x /GaAs strained-layer superlattices: Crystal growth, spinodal decomposition, and antiphase domains Journal of Applied Physics ·Y.-W. Kim,Hamza Dinç,D. Lubben,Ian Robertson,J. E. Greene	1994	8
10	Phase-selective chemical vapor deposition of boron carbide by nucleation control on patterned substrates Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Ulf Jansson,J.‐O. Carlsson,L. C. Markert,J. E. Greene	1989	7
11	Quantitative analysis and depth profiling of rare gases in solids by secondary-ion mass spectrometry: Detection of (CsR)+ molecular ions (R=rare gas) Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Mark Ray,J. E. Baker,C.M. Loxton,J. E. Greene	1988	61
12	A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth Journal of Crystal Growth ·J. E. Greene,Teruaki Motooka,J.‐E. Sundgren,Angus Rockett,S. M. Gorbatkin,D. Lubben,Scott A. Barnett	1986	25
13	Laser-induced plasmas for primary ion deposition of epitaxial Ge and Si films Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·D. Lubben,Scott A. Barnett,Kazuhiro Suzuki,S. M. Gorbatkin,J. E. Greene	1985	101
14	A low-energy, ultrahigh vacuum, solid-metal ion source for accelerated-ion doping during molecular beam epitaxy Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Angus Rockett,Scott A. Barnett,J. E. Greene	1984	28
15	Growth of high quality epitaxial Ge films on (100)Si by sputter deposition Applied Physics Letters ·G. Bajor,Ken Cadien,Mark Ray,J. E. Greene,Namig Isayev	1982	28
16	Ion Mixing During Film Deposition: Growth of Metastable Semiconducting and Metallic Alloys MRS Proceedings ·Ken Cadien,Mark Ray,Sangmun Shin,J. M. Rigsbee,Scott A. Barnett,J. E. Greene	1981	1
17	Epitaxial Ge/GaAs heterostructures by scanned cw laser annealing of a-Ge layers on GaAs Applied Physics Letters ·J. E. Greene,Ken Cadien,D. Lubben,G. A. Hawkins,Maarja Krass,D. Lane	1981	9
18	Compositionally modulated sputtered InSb/GaSb superlattices: Crystal growth and interlayer diffusion Journal of Applied Physics ·A. H. Eltoukhy,J. E. Greene	1979	46
19	Abstract: Surface studies of Y2O3 doped CeO2 and ZrO2 thin films Journal of Vacuum Science and Technology ·Tery L. Barr,L. B. Welsh,F. R. Szofran,J. E. Greene,R. E. Klinger	1978	4
20	Structural and electrical characteristics of InSb thin films grown by rf sputtering Journal of Applied Physics ·J. E. Greene,C. E. Wickersham	1976	43

About J. E. Greene

J. E. Greene is a scholar working on Mechanics of Materials, Condensed Matter Physics, Computational Mechanics, Surfaces, Coatings and Films and Electrical and Electronic Engineering, having authored 145 papers that have together received 5.3k indexed citations. Recurring topics across this work include Metal and Thin Film Mechanics (61 papers), Semiconductor materials and devices (59 papers), Ion-surface interactions and analysis (39 papers), GaN-based semiconductor devices and materials (27 papers), Diamond and Carbon-based Materials Research (20 papers), Semiconductor materials and interfaces (17 papers), Semiconductor Quantum Structures and Devices (14 papers) and Silicon and Solar Cell Technologies (11 papers). The work is most often cited by research in Mechanics of Materials (3.1k citations), Condensed Matter Physics (973 citations), Materials Chemistry (3.0k citations), Computational Mechanics (1.1k citations) and Electrical and Electronic Engineering (2.5k citations). J. E. Greene has collaborated with scholars based in United States, Sweden and Germany. Frequent co-authors include I. Petrov, Lars Hultman, J.‐E. Sundgren, A. H. Eltoukhy, Scott A. Barnett, J.‐E. Sundgren, W.‐D. Münz, D. Lubben, Grzegorz Greczyński and Daniel Gall. Their work appears in journals such as Journal of Applied Physics, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Applied Physics Letters, Surface Science and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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