Daniel Gall

12.3k total citations · 1 hit paper
219 papers, 9.9k citations indexed

About

Daniel Gall is a scholar working on Mechanics of Materials, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Daniel Gall has authored 219 papers receiving a total of 9.9k indexed citations (citations by other indexed papers that have themselves been cited), including 126 papers in Mechanics of Materials, 115 papers in Electrical and Electronic Engineering and 93 papers in Materials Chemistry. Recurrent topics in Daniel Gall's work include Metal and Thin Film Mechanics (124 papers), Semiconductor materials and devices (103 papers) and Copper Interconnects and Reliability (69 papers). Daniel Gall is often cited by papers focused on Metal and Thin Film Mechanics (124 papers), Semiconductor materials and devices (103 papers) and Copper Interconnects and Reliability (69 papers). Daniel Gall collaborates with scholars based in United States, China and Canada. Daniel Gall's co-authors include I. Petrov, S. V. Khare, J. E. Greene, Chris L. Mulligan, J. S. Chawla, C. M. Zhou, Cheung Soo Shin, Karthik Balasubramanian, J. E. Greene and S. V. Kesapragada and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

Daniel Gall

213 papers receiving 9.8k citations

Hit Papers

Electron mean free path in elemental metals 2016 2026 2019 2022 2016 200 400 600
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Electron mean free path in elemental metals
    2016 704 citations Daniel Gall Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daniel Gall United States 56 5.2k 4.8k 4.4k 2.7k 1.8k 219 9.9k
J.‐E. Sundgren Sweden 49 6.8k 1.3× 7.2k 1.5× 3.8k 0.9× 1.1k 0.4× 1.2k 0.7× 158 10.4k
Eric Chason United States 47 3.8k 0.7× 2.7k 0.6× 5.0k 1.1× 1.7k 0.6× 2.0k 1.1× 197 9.1k
J. E. Greene United States 47 5.5k 1.0× 5.9k 1.2× 3.1k 0.7× 795 0.3× 685 0.4× 118 8.2k
S. Anders United States 42 3.0k 0.6× 2.3k 0.5× 1.5k 0.3× 1.3k 0.5× 2.9k 1.6× 114 5.9k
Ulf Helmersson Sweden 55 8.7k 1.7× 8.7k 1.8× 5.9k 1.3× 1.3k 0.5× 746 0.4× 208 12.2k
B Clemens United States 41 3.6k 0.7× 1.2k 0.3× 2.9k 0.7× 1.9k 0.7× 2.0k 1.1× 195 7.2k
Orlando Auciello United States 60 13.1k 2.5× 3.7k 0.8× 5.5k 1.2× 3.4k 1.3× 3.1k 1.7× 381 15.7k
Jens Birch Sweden 43 4.1k 0.8× 2.8k 0.6× 1.7k 0.4× 890 0.3× 808 0.5× 292 6.6k
Yasuo Koide Japan 54 7.5k 1.4× 1.6k 0.3× 6.6k 1.5× 3.4k 1.2× 2.0k 1.1× 322 11.2k
Karsten Albe Germany 63 10.3k 2.0× 1.7k 0.3× 4.5k 1.0× 2.3k 0.8× 1.3k 0.7× 238 13.9k

Countries citing papers authored by Daniel Gall

Since Specialization
Citations

This map shows the geographic impact of Daniel Gall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel Gall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel Gall more than expected).

Fields of papers citing papers by Daniel Gall

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel Gall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel Gall. The network helps show where Daniel Gall may publish in the future.

Co-authorship network of co-authors of Daniel Gall

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel Gall. A scholar is included among the top collaborators of Daniel Gall based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel Gall. Daniel Gall is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gall, Daniel, et al.. (2025). The Effect of Co/TiN Interfaces on Co Interconnect Resistivity. Surfaces. 8(4). 89–89.
2.
Nishat, Sadiq Shahriyar & Daniel Gall. (2025). Electron scattering at Ru(0001) surfaces: Effect of Ti caps and oxygen exposure. Applied Physics Letters. 127(18).
3.
Nishat, Sadiq Shahriyar, et al.. (2025). Mechanical properties of compositionally modulated epitaxial VN(001)/VC(001) films. Acta Materialia. 294. 121135–121135.
4.
Gall, Daniel, et al.. (2024). Resistivity size effect in epitaxial face-centered cubic Co(001) layers. Applied Physics Letters. 124(12). 2 indexed citations
5.
Gall, Daniel, et al.. (2022). In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N 2 , O 2 , or H 2 O. Journal of The Electrochemical Society. 169(9). 93504–93504. 1 indexed citations
6.
Gall, Daniel, J. Judy, Zhihong Chen, et al.. (2021). Materials for interconnects. MRS Bulletin. 46(10). 959–966. 82 indexed citations
7.
Barmak, Katayun, Kadir Sentosun, Amirali Zangiabadi, et al.. (2020). Defects in epitaxial Ru(0001) on Al2O3(0001): Dislocations, stacking faults, and deformation twins. Journal of Applied Physics. 128(4). 8 indexed citations
8.
Koh, Yee Rui, Jingjing Shi, Baiwei Wang, et al.. (2020). Thermal boundary conductance across epitaxial metal/sapphire interfaces. Physical review. B.. 102(20). 35 indexed citations
9.
Khaniya, Asim, et al.. (2019). Resistivity and surface scattering of (0001) single crystal ruthenium thin films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 37(3). 40 indexed citations
10.
Milosevic, Erik, et al.. (2019). Resistivity scaling and electron surface scattering in epitaxial Co(0001) layers. Journal of Applied Physics. 125(24). 40 indexed citations
11.
Milosevic, Erik, et al.. (2019). The Resistivity Size Effect in Epitaxial Nb(001) and Nb(011) Layers. IEEE Transactions on Electron Devices. 66(8). 3473–3478. 30 indexed citations
12.
Milosevic, Erik, Sit Kerdsongpanya, Amirali Zangiabadi, et al.. (2018). Resistivity size effect in epitaxial Ru(0001) layers. Journal of Applied Physics. 124(16). 76 indexed citations
13.
Ozsdolay, B.D., Xin Shen, Karthik Balasubramanian, et al.. (2017). Elastic constants of epitaxial cubic MoN (001) layers. Surface and Coatings Technology. 325. 572–578. 24 indexed citations
14.
Balasubramanian, Karthik, S. V. Khare, & Daniel Gall. (2016). Vacancy-induced mechanical stabilization of cubic tungsten nitride. Physical review. B.. 94(17). 71 indexed citations
15.
Zheng, Pei, et al.. (2015). Optical and electron transport properties of rock-salt Sc1−xAlxN. Journal of Applied Physics. 118(1). 37 indexed citations
16.
Liu, Zhi, Xiuquan Zhou, Daniel Gall, & S. V. Khare. (2014). First-principles investigation of the structural, mechanical and electronic properties of the NbO-structured 3d, 4d and 5d transition metal nitrides. Bulletin of the American Physical Society. 1 indexed citations
17.
Gall, Daniel, et al.. (2013). A Rule-Based Implementation of ACT-R Using Constraint Handling Rules. 4 indexed citations
18.
Chawla, J. S., et al.. (2011). Epitaxial suppression of the metal-insulator transition in CrN. Physical Review B. 84(7). 53 indexed citations
19.
Gall, Daniel, et al.. (2005). 反応性堆積エピタクシーによるSi(001)上のCoSi 2 の成長. Journal of Applied Physics. 97(4). 1–44909. 21 indexed citations
20.
Wang, Jian, Hanchen Huang, S. V. Kesapragada, & Daniel Gall. (2005). Growth of Y-Shaped Nanorods through Physical Vapor Deposition. Nano Letters. 5(12). 2505–2508. 127 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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