L. C. Markert

1.2k total citations · 1 hit paper
19 papers, 1.0k citations indexed

About

L. C. Markert is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Mechanics of Materials. According to data from OpenAlex, L. C. Markert has authored 19 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 8 papers in Computational Mechanics and 5 papers in Mechanics of Materials. Recurrent topics in L. C. Markert's work include Semiconductor materials and devices (9 papers), Ion-surface interactions and analysis (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). L. C. Markert is often cited by papers focused on Semiconductor materials and devices (9 papers), Ion-surface interactions and analysis (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). L. C. Markert collaborates with scholars based in United States and Sweden. L. C. Markert's co-authors include J.‐E. Sundgren, Scott A. Barnett, J. E. Greene, Ulf Helmersson, Snejana V. Todorova, J. E. Greene, J. Knall, Lars Hultman, M. Arif Hasan and W.-X. Ni and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

L. C. Markert

19 papers receiving 980 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Growth of single-crystal TiN/VN strained-layer superlattices with extremely high mechanical hardness

1987 630 citations Ulf Helmersson, Snejana V. Todorova et al. Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. C. Markert United States	10	702	680	372	161	133	19	1.0k
T.J. Kinder Australia	15	651 0.9×	499 0.7×	247 0.7×	119 0.7×	118 0.9×	20	741
S. L. Rohde United States	20	927 1.3×	727 1.1×	368 1.0×	208 1.3×	55 0.4×	35	1.1k
F. Adibi United States	10	934 1.3×	708 1.0×	432 1.2×	99 0.6×	44 0.3×	11	1.1k
M. Shinn United States	12	1.0k 1.4×	823 1.2×	248 0.7×	243 1.5×	97 0.7×	19	1.2k
Anita Madan United States	17	680 1.0×	739 1.1×	398 1.1×	161 1.0×	75 0.6×	53	1.1k
D.C. McIntyre United States	9	813 1.2×	846 1.2×	443 1.2×	138 0.9×	46 0.3×	13	1.1k
J. M. Molarius Finland	14	526 0.7×	392 0.6×	458 1.2×	116 0.7×	130 1.0×	46	816
S. Kadlec Czechia	24	1.2k 1.7×	891 1.3×	626 1.7×	147 0.9×	68 0.5×	43	1.4k
T. I. Selinder Sweden	15	433 0.6×	478 0.7×	265 0.7×	166 1.0×	81 0.6×	23	802
G. Håkansson Sweden	15	1.5k 2.1×	1.2k 1.8×	472 1.3×	365 2.3×	70 0.5×	22	1.6k

Countries citing papers authored by L. C. Markert

Since Specialization

Citations

This map shows the geographic impact of L. C. Markert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. C. Markert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. C. Markert more than expected).

Fields of papers citing papers by L. C. Markert

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. C. Markert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. C. Markert. The network helps show where L. C. Markert may publish in the future.

Co-authorship network of co-authors of L. C. Markert

This figure shows the co-authorship network connecting the top 25 collaborators of L. C. Markert. A scholar is included among the top collaborators of L. C. Markert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. C. Markert. L. C. Markert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Markert, L. C., et al.. (1994). Crystal growth and electronic properties of ultrahigh vacuum ion-beam sputter deposited Sb-doped Si(001)2×1. Applied Physics Letters. 64(11). 1398–1400. 9 indexed citations

Kim, Y.-W., et al.. (1993). Growth of homoepitaxial Ge(001)2 × 1 by ultrahigh vacuum ion beam sputter deposition. Thin Solid Films. 223(2). 212–217. 15 indexed citations

Ni, W.-X., G. V. Hansson, J.‐E. Sundgren, et al.. (1992). δ-function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy. Physical review. B, Condensed matter. 46(12). 7551–7558. 29 indexed citations

Markert, L. C., J. E. Greene, W.-X. Ni, G. V. Hansson, & J.‐E. Sundgren. (1991). Concentration transient analysis of antimony surface segregation during Si(001) molecular beam epitaxy. Thin Solid Films. 206(1-2). 59–63. 9 indexed citations

Ni, W.-X., G. V. Hansson, J.‐E. Sundgren, L. C. Markert, & J. E. Greene. (1991). Experimental and Model Studies of Dopant Segregation During Growth of Silicon Films by Molecular Beam Epitaxy. MRS Proceedings. 220. 1 indexed citations

Jansson, Ulf, Mats Boman, L. C. Markert, J.‐O. Carlsson, & J. E. Greene. (1991). Phase selective deposition of boron achieved by crystallization control. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 9(2). 266–270. 6 indexed citations

Hasan, M. Arif, J.‐E. Sundgren, G. V. Hansson, L. C. Markert, & J. E. Greene. (1990). Incorporation probabilities and depth distributions of aluminum co-evaporated during Si(100) molecular beam epitaxy. Thin Solid Films. 184(1-2). 61–67. 9 indexed citations

Knall, J., J.‐E. Sundgren, L. C. Markert, & J. E. Greene. (1989). Incorporation of In by recoil implantation during MBE growth of Si(100). Surface Science Letters. 214(1-2). A253–A253. 7 indexed citations

Jansson, Ulf, J.‐O. Carlsson, L. C. Markert, & J. E. Greene. (1989). Phase-selective chemical vapor deposition of boron carbide by nucleation control on patterned substrates. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(6). 3172–3175. 7 indexed citations

10.

Hultman, Lars, J.‐E. Sundgren, L. C. Markert, & J. E. Greene. (1989). Ar and excess N incorporation in epitaxial TiN films grown by reactive bias sputtering in mixed Ar/N2 and pure N2 discharges. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(3). 1187–1193. 64 indexed citations

11.

Ni, W.-X., J. Knall, M. Arif Hasan, et al.. (1989). Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy. Physical review. B, Condensed matter. 40(15). 10449–10459. 55 indexed citations

12.

Hasan, M. Arif, J. Knall, Scott A. Barnett, et al.. (1989). Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy. Journal of Applied Physics. 65(1). 172–179. 58 indexed citations

13.

Knall, J., J.‐E. Sundgren, L. C. Markert, & J. E. Greene. (1989). Incorporation of in by recoil implantation during MBE growth of Si(100). Surface Science. 214(1-2). 149–164. 7 indexed citations

14.

Sundgren, J.‐E., J. Knall, W.-X. Ni, et al.. (1989). Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy. Thin Solid Films. 183(1-2). 281–297. 11 indexed citations

15.

Knall, J., et al.. (1989). Influence of the Si evaporation source on the incorporation of In during Si molecular-beam epitaxy growth: A comparative study of magnetically and electrostatically-focused electron-gun evaporators. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(2). 204–209. 3 indexed citations

16.

Hirashita, N., L. C. Markert, Y.-W. Kim, et al.. (1989). Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy. Journal of Applied Physics. 65(3). 1189–1197. 37 indexed citations

17.

Hultman, Lars, B.-O. Johansson, J.‐E. Sundgren, L. C. Markert, & J. E. Greene. (1988). Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 discharges. Applied Physics Letters. 53(13). 1175–1177. 27 indexed citations

18.

Fons, Paul, N. Hirashita, L. C. Markert, et al.. (1988). Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy. Applied Physics Letters. 53(18). 1732–1734. 26 indexed citations

19.

Helmersson, Ulf, Snejana V. Todorova, Scott A. Barnett, et al.. (1987). Growth of single-crystal TiN/VN strained-layer superlattices with extremely high mechanical hardness. Journal of Applied Physics. 62(2). 481–484. 630 indexed citations breakdown →

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