L. C. Markert

1.2k citations

19 papers · 1.0k indexed · 1 hit paper · h-index 10

Mechanics of Materials top 2%
- Metal and Thin Film Mechanics 5
Materials Chemistry top 10%
- Diamond and Carbon-based Materials Research 3
Ceramics and Composites top 10%
Condensed Matter Physics top 10%
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 9
- Integrated Circuits and Semiconductor Failure Analysis 8
- Thin-Film Transistor Technologies 7
- Silicon and Solar Cell Technologies 6
Computational Mechanics
- Ion-surface interactions and analysis 8
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 2

Co-authors: J.‐E. Sundgren Scott A. Barnett J. E. Greene Ulf Helmersson Snejana V. Todorova J. Knall Lars Hultman M. Arif Hasan
Cited by: Mechanics of Materials Materials Chemistry Ceramics and Composites
Journals: Thin Solid Films (4 papers)Applied Physics Letters (3 papers)Journal of Applied Physics (3 papers)
Partner nations: United States Sweden

In The Last Decade

L. C. Markert

19 papers receiving 980 citations

Hit Papers

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Peers

Countries citing papers authored by L. C. Markert

Since Specialization

Citations

This map shows the geographic impact of L. C. Markert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. C. Markert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. C. Markert more than expected).

Fields of papers citing papers by L. C. Markert

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. C. Markert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. C. Markert. The network helps show where L. C. Markert may publish in the future.

Co-authorship network

The 24 scholars most cited alongside L. C. Markert, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. C. Markert Line = papers co-authored together L. C. Markert links everyone, so they are left out of the graph.

All Works

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19 of 19 papers shown

#	Work
1	Crystal growth and electronic properties of ultrahigh vacuum ion-beam sputter deposited Sb-doped Si(001)2×1 Applied Physics Letters ·光育岩崎,F V Rudenko,栄植村,L. C. Markert,J. E. Greene	1994	9
2	Growth of homoepitaxial Ge(001)2 × 1 by ultrahigh vacuum ion beam sputter deposition Thin Solid Films ·F V Rudenko,Y.-W. Kim,L. C. Markert,Manuel Braß,J. E. Greene	1993	15
3	δ-function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy Physical review. B, Condensed matter ·W.-X. Ni,G. V. Hansson,J.‐E. Sundgren,Lars Hultman,Reine Wallenberg,Jiyong Yao,L. C. Markert,J. E. Greene	1992	29
4	Concentration transient analysis of antimony surface segregation during Si(001) molecular beam epitaxy Thin Solid Films ·L. C. Markert,J. E. Greene,W.-X. Ni,G. V. Hansson,J.‐E. Sundgren	1991	9
5	Experimental and Model Studies of Dopant Segregation During Growth of Silicon Films by Molecular Beam Epitaxy MRS Proceedings ·W.-X. Ni,G. V. Hansson,J.‐E. Sundgren,L. C. Markert,J. E. Greene	1991	1
6	Phase selective deposition of boron achieved by crystallization control Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Ulf Jansson,Mats Boman,L. C. Markert,J.‐O. Carlsson,J. E. Greene	1991	6
7	Incorporation probabilities and depth distributions of aluminum co-evaporated during Si(100) molecular beam epitaxy Thin Solid Films ·M. Arif Hasan,J.‐E. Sundgren,G. V. Hansson,L. C. Markert,J. E. Greene	1990	9
8	Incorporation of In by recoil implantation during MBE growth of Si(100) Surface Science Letters ·J. Knall,J.‐E. Sundgren,L. C. Markert,J. E. Greene	1989	7
9	Phase-selective chemical vapor deposition of boron carbide by nucleation control on patterned substrates Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Ulf Jansson,J.‐O. Carlsson,L. C. Markert,J. E. Greene	1989	7
10	Ar and excess N incorporation in epitaxial TiN films grown by reactive bias sputtering in mixed Ar/N2 and pure N2 discharges Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Lars Hultman,J.‐E. Sundgren,L. C. Markert,J. E. Greene	1989	64
11	Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy Physical review. B, Condensed matter ·W.-X. Ni,J. Knall,M. Arif Hasan,G. V. Hansson,J.‐E. Sundgren,Scott A. Barnett,L. C. Markert,J. E. Greene	1989	55
12	Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy Journal of Applied Physics ·M. Arif Hasan,J. Knall,Scott A. Barnett,J.‐E. Sundgren,L. C. Markert,Angus Rockett,J. E. Greene	1989	58
13	Incorporation of in by recoil implantation during MBE growth of Si(100) Surface Science ·J. Knall,J.‐E. Sundgren,L. C. Markert,J. E. Greene	1989	7
14	Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy Thin Solid Films ·J.‐E. Sundgren,J. Knall,W.-X. Ni,M. Arif Hasan,L. C. Markert,J. E. Greene	1989	11
15	Influence of the Si evaporation source on the incorporation of In during Si molecular-beam epitaxy growth: A comparative study of magnetically and electrostatically-focused electron-gun evaporators Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·J. Knall,Yuni Nustini,L. C. Markert,Angus Rockett,J. E. Greene	1989	3
16	Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy Journal of Applied Physics ·Lifa Maposa,N. Hirashita,L. C. Markert,Y.-W. Kim,J. E. Greene,J. Knall,W.-X. Ni,M. Arif Hasan,J.‐E. Sundgren	1989	37
17	Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 discharges Applied Physics Letters ·Lars Hultman,B.-O. Johansson,J.‐E. Sundgren,L. C. Markert,J. E. Greene	1988	27
18	Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy Applied Physics Letters ·Paul Fons,N. Hirashita,L. C. Markert,Y.-W. Kim,J. E. Greene,W.-X. Ni,J. Knall,G. V. Hansson,J.‐E. Sundgren	1988	26
19	Growth of single-crystal TiN/VN strained-layer superlattices with extremely high mechanical hardnessbreakdown → Journal of Applied Physics ·Ulf Helmersson,Snejana V. Todorova,Scott A. Barnett,J.‐E. Sundgren,L. C. Markert,J. E. Greene	1987	630

About L. C. Markert

L. C. Markert is a scholar working on Computational Mechanics, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Mechanics of Materials and Condensed Matter Physics, having authored 19 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (9 papers), Ion-surface interactions and analysis (8 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), Thin-Film Transistor Technologies (7 papers), Silicon and Solar Cell Technologies (6 papers), Metal and Thin Film Mechanics (5 papers), Diamond and Carbon-based Materials Research (3 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Mechanics of Materials (702 citations), Materials Chemistry (680 citations), Ceramics and Composites (69 citations), Condensed Matter Physics (112 citations) and Electrical and Electronic Engineering (372 citations). L. C. Markert has collaborated with scholars based in United States and Sweden. Frequent co-authors include J.‐E. Sundgren, Scott A. Barnett, J. E. Greene, Ulf Helmersson, Snejana V. Todorova, J. E. Greene, J. Knall, Lars Hultman, M. Arif Hasan and W.-X. Ni. Their work appears in journals such as Thin Solid Films, Applied Physics Letters, Journal of Applied Physics, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Physical review. B, Condensed matter.

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