Hao Feng

439 total citations
38 papers, 332 citations indexed

About

Hao Feng is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Hao Feng has authored 38 papers receiving a total of 332 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Hao Feng's work include Silicon Carbide Semiconductor Technologies (18 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Hao Feng is often cited by papers focused on Silicon Carbide Semiconductor Technologies (18 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Hao Feng collaborates with scholars based in Hong Kong, China and Japan. Hao Feng's co-authors include J.K.O. Sin, Yuichi Onozawa, Takeshi Yoshimura, Kazuya Tada, Yoshiaki Nakano, Masakazu Sugiyama, Yong Liu, Hirohisa Tanaka, Xianda Zhou and Ramu V. Ramaswamy and has published in prestigious journals such as Applied Physics Letters, Molecules and Journal of Computational Chemistry.

In The Last Decade

Hao Feng

33 papers receiving 315 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Hao Feng Hong Kong	10	282	86	49	49	34	38	332
Jie Fan China	10	328 1.2×	108 1.3×	32 0.7×	96 2.0×	15 0.4×	53	392
Weiliang Gan Singapore	11	158 0.6×	240 2.8×	109 2.2×	83 1.7×	87 2.6×	15	313
Ziyao Zhu China	12	280 1.0×	142 1.7×	27 0.6×	180 3.7×	6 0.2×	46	339
J. Diouri Morocco	10	184 0.7×	167 1.9×	39 0.8×	190 3.9×	23 0.7×	24	345
Juin J. Liou United States	10	518 1.8×	42 0.5×	30 0.6×	49 1.0×	74 2.2×	35	568
X.W. Wang United States	9	260 0.9×	52 0.6×	91 1.9×	75 1.5×	141 4.1×	17	319
Chaoyi Zhu China	11	272 1.0×	181 2.1×	24 0.5×	122 2.5×	90 2.6×	18	337
S. Barbet France	12	299 1.1×	200 2.3×	20 0.4×	48 1.0×	43 1.3×	37	390
Yuanzhao Yao Japan	7	288 1.0×	109 1.3×	30 0.6×	252 5.1×	9 0.3×	33	352
Jinfu Feng China	11	189 0.7×	205 2.4×	27 0.6×	217 4.4×	46 1.4×	29	352

Countries citing papers authored by Hao Feng

Since Specialization

Citations

This map shows the geographic impact of Hao Feng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hao Feng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hao Feng more than expected).

Fields of papers citing papers by Hao Feng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hao Feng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hao Feng. The network helps show where Hao Feng may publish in the future.

Co-authorship network of co-authors of Hao Feng

This figure shows the co-authorship network connecting the top 25 collaborators of Hao Feng. A scholar is included among the top collaborators of Hao Feng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hao Feng. Hao Feng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Li, Weiyin, et al.. (2025). First principles study on the electronic and optical properties of Yb and La doped diamond. Materials Science in Semiconductor Processing. 192. 109457–109457. 2 indexed citations

Li, Weiyin, et al.. (2025). Density Functional Theory Study of Structural, Electronic and Optical Properties of 13‐Atom Au‐Ag‐Cu Ternary Clusters. Journal of Computational Chemistry. 46(30). e70272–e70272.

Liu, Yong, et al.. (2024). Experimental Demonstration of the Double-Trench, Buried-P JTE Edge Termination with Short Edge Width and High dV/dt Capability for 1200 V-class SiC Devices. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 17–20. 1 indexed citations

Li, Weiyin, et al.. (2024). First-principles study of the C2H4 adsorption on the small Ag-Cu clusters. Materials Today Communications. 41. 110279–110279.

Li, Weiyin, et al.. (2024). First Principle Study on Structural, Electronic, Magnetic, and Optical Properties of Co-Doped Middle Size Silver Clusters. Molecules. 29(11). 2670–2670.

Liu, Yong, et al.. (2022). A Fast and Soft Reverse Recovery Diode With a Punch-Through NPN Structure. IEEE Electron Device Letters. 44(1). 108–111. 2 indexed citations

Liu, Yong, et al.. (2020). A Trench-Field-Plate High-Voltage Power MOSFET. IEEE Transactions on Electron Devices. 67(6). 2482–2488. 1 indexed citations

Liu, Yong, et al.. (2020). A New Double Trench, Buried-P JTE Edge Termination for 1200 V-class SiC Devices. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 162–165. 3 indexed citations

Liu, Yong, et al.. (2019). Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices. IEEE Transactions on Electron Devices. 66(10). 4251–4257. 11 indexed citations

10.

Chen, Mingjun, Guoyi Dong, Xue Li, et al.. (2019). Influence of MoS2 quantum dots size on the properties of memristor devices. Optik. 207. 163776–163776. 11 indexed citations

11.

Fu, Haiwei, Yan Zhang, Hao Feng, et al.. (2019). Influence of gamma ray radiation on two-dimensional sub-threshold current of strained Si nano NMOSFET. Radiation effects and defects in solids. 174(9-10). 928–937.

12.

Liu, Yong, et al.. (2019). Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 143–146. 5 indexed citations

13.

Tang, Chak Wah, Hao Feng, Huaxing Jiang, et al.. (2018). A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor. IEEE Electron Device Letters. 39(3). 394–396. 16 indexed citations

14.

Tang, Chak Wah, Hao Feng, Huaxing Jiang, et al.. (2018). Experimental characterization of the fully integrated Si-GaN cascoded FET. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 28. 216–219. 3 indexed citations

15.

Feng, Hao, et al.. (2016). Performance of crystalline silicon PV modules applied in the typical climate. Acta Scientiarum Naturalium Universitatis Sunyatseni. 55(6). 86. 1 indexed citations

16.

Feng, Hao, et al.. (2016). Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination. IEEE Transactions on Electron Devices. 64(3). 728–734. 8 indexed citations

17.

Feng, Hao, et al.. (2016). A 1200 V-class Fin P-body IGBT with ultra-narrow-mesas for low conduction loss. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 203–206. 22 indexed citations

18.

Feng, Hao, et al.. (2015). A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance. IEEE Electron Device Letters. 36(6). 591–593. 31 indexed citations

19.

Zhou, Xianda, Hao Feng, & J.K.O. Sin. (2014). A Novel SNOS Gate-Controlled, Normally-Off p-i-n Switch. IEEE Electron Device Letters. 35(1). 111–113. 1 indexed citations

20.

Feng, Hao, et al.. (1998). Field-induced optical effect in a five-step asymmetric coupled quantum well with modified potential. IEEE Journal of Quantum Electronics. 34(7). 1197–1208. 61 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact