Hao Feng

439 citations

38 papers · 332 indexed · h-index 10

Co-authors: J.K.O. Sin Yuichi Onozawa Takeshi Yoshimura Yoshiaki Nakano Kazuya Tada Masakazu Sugiyama Xianda ZhouYong Liu
Topics: Silicon Carbide Semiconductor Technologies (18 papers)Semiconductor materials and devices (9 papers)Advancements in Semiconductor Devices and Circuit Design (7 papers)
Cited by: Electrical and Electronic Engineering Nuclear Energy and Engineering Condensed Matter Physics
Journals: Applied Physics Letters Molecules Journal of Computational Chemistry
Partner nations: Hong Kong China Japan

In The Last Decade

Hao Feng

33 papers receiving 315 citations

Peers

Countries citing papers authored by Hao Feng

Since Specialization

Citations

This map shows the geographic impact of Hao Feng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hao Feng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hao Feng more than expected).

Fields of papers citing papers by Hao Feng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hao Feng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hao Feng. The network helps show where Hao Feng may publish in the future.

Co-authorship network of co-authors of Hao Feng

This figure shows the co-authorship network connecting the top 25 collaborators of Hao Feng. A scholar is included among the top collaborators of Hao Feng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hao Feng. Hao Feng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	First principles study on the electronic and optical properties of Yb and La doped diamond 2025 ·Materials Science in Semiconductor Processing ·Weiyin Li,Meng Wang,Hao Feng,(unknown),Chao Yang,L. J. Cheng,(unknown)	2
2	Density Functional Theory Study of Structural, Electronic and Optical Properties of 13‐Atom Au‐Ag‐Cu Ternary Clusters 2025 ·Journal of Computational Chemistry ·Weiyin Li,(unknown),Hao Feng,(unknown)	0
3	First-principles study of the C2H4 adsorption on the small Ag-Cu clusters 2024 ·Materials Today Communications ·Weiyin Li,(unknown),Hao Feng	0
4	Experimental Demonstration of the Double-Trench, Buried-P JTE Edge Termination with Short Edge Width and High dV/dt Capability for 1200 V-class SiC Devices 2024 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Yong Liu,Hao Feng,(unknown),(unknown),J.K.O. Sin	1
5	A Fast and Soft Reverse Recovery Diode With a Punch-Through NPN Structure 2022 ·IEEE Electron Device Letters ·(unknown),Yong Liu,Hao Feng,(unknown),J.K.O. Sin	2
6	A Trench-Field-Plate High-Voltage Power MOSFET 2020 ·IEEE Transactions on Electron Devices ·(unknown),(unknown),Yong Liu,Xianda Zhou,Hao Feng,J.K.O. Sin	1
7	A New Double Trench, Buried-P JTE Edge Termination for 1200 V-class SiC Devices 2020 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Yong Liu,Hao Feng,Xianda Zhou,(unknown),(unknown),(unknown),J.K.O. Sin	3
8	Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices 2019 ·IEEE Transactions on Electron Devices ·Yong Liu,(unknown),Hao Feng,(unknown),Yuichi Onozawa,(unknown),(unknown),J.K.O. Sin	11
9	Influence of MoS2 quantum dots size on the properties of memristor devices 2019 ·Optik ·Mingjun Chen,Guoyi Dong,Xue Li,(unknown),Hao Feng,Fenghe Wang,Li Guan,(unknown),(unknown)	11
10	Influence of gamma ray radiation on two-dimensional sub-threshold current of strained Si nano NMOSFET 2019 ·Radiation effects and defects in solids ·(unknown),Haiwei Fu,Yan Zhang,Hao Feng,Guoxiang Chen,Huiyong Hu,(unknown),Yan Li	0
11	Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices 2019 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Yong Liu,(unknown),Hao Feng,Yuichi Onozawa,(unknown),(unknown),J.K.O. Sin	5
12	A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor 2018 ·IEEE Electron Device Letters ·(unknown),Chak Wah Tang,Hao Feng,Huaxing Jiang,(unknown),Xianda Zhou,Kei May Lau,J.K.O. Sin	16
13	Experimental characterization of the fully integrated Si-GaN cascoded FET 2018 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·(unknown),Chak Wah Tang,Hao Feng,Huaxing Jiang,(unknown),Xianda Zhou,Kei May Lau,J.K.O. Sin	3
14	Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination 2016 ·IEEE Transactions on Electron Devices ·(unknown),Hao Feng,(unknown),Yong Liu,Yuichi Onozawa,Hirohisa Tanaka,J.K.O. Sin	8
15	Performance of crystalline silicon PV modules applied in the typical climate 2016 ·Acta Scientiarum Naturalium Universitatis Sunyatseni ·(unknown),(unknown),(unknown),Hao Feng,Xinxin Chen,Hui Li	1
16	A 1200 V-class Fin P-body IGBT with ultra-narrow-mesas for low conduction loss 2016 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Hao Feng,(unknown),Yuichi Onozawa,Takeshi Yoshimura,(unknown),J.K.O. Sin	22
17	A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance 2015 ·IEEE Electron Device Letters ·Hao Feng,(unknown),Yuichi Onozawa,Takeshi Yoshimura,(unknown),J.K.O. Sin	31
18	A Novel SNOS Gate-Controlled, Normally-Off p-i-n Switch 2014 ·IEEE Electron Device Letters ·Xianda Zhou,Hao Feng,J.K.O. Sin	1
19	Hot Carrier Injection Effects in the Ultrashallow Body SONOS Gate Power MOSFET 2013 ·IEEE Transactions on Electron Devices ·Xianda Zhou,Hao Feng,J.K.O. Sin	2
20	Field-induced optical effect in a five-step asymmetric coupled quantum well with modified potential 1998 ·IEEE Journal of Quantum Electronics ·Hao Feng,(unknown),Masakazu Sugiyama,Kazuya Tada,Yoshiaki Nakano	61

About Hao Feng

Hao Feng is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials, having authored 38 papers that have together received 332 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (18 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (282 citations), Nuclear Energy and Engineering (2 citations) and Condensed Matter Physics (34 citations). Hao Feng has collaborated with scholars based in Hong Kong, China and Japan. Frequent co-authors include J.K.O. Sin, Yuichi Onozawa, Takeshi Yoshimura, Yoshiaki Nakano, Kazuya Tada, Masakazu Sugiyama, Xianda Zhou, Yong Liu, Hirohisa Tanaka and Ramu V. Ramaswamy. Their work appears in journals such as Applied Physics Letters, Molecules and Journal of Computational Chemistry.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact