Shibin Krishna

1.1k total citations
28 papers, 911 citations indexed

About

Shibin Krishna is a scholar working on Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Shibin Krishna has authored 28 papers receiving a total of 911 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electronic, Optical and Magnetic Materials, 22 papers in Condensed Matter Physics and 21 papers in Materials Chemistry. Recurrent topics in Shibin Krishna's work include Ga2O3 and related materials (26 papers), GaN-based semiconductor devices and materials (22 papers) and ZnO doping and properties (21 papers). Shibin Krishna is often cited by papers focused on Ga2O3 and related materials (26 papers), GaN-based semiconductor devices and materials (22 papers) and ZnO doping and properties (21 papers). Shibin Krishna collaborates with scholars based in India, Saudi Arabia and United Kingdom. Shibin Krishna's co-authors include Neha Aggarwal, Govind Gupta, Sudhir Husale, Alka Sharma, Abhiram Gundimeda, K. K. Maurya, Lalit Goswami, Monu Mishra, N.D. Sharma and Shubhendra Kumar Jain and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and ACS Applied Materials & Interfaces.

In The Last Decade

Shibin Krishna

28 papers receiving 892 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shibin Krishna India 16 627 600 512 295 205 28 911
Shashwat Rathkanthiwar United States 13 385 0.6× 305 0.5× 377 0.7× 224 0.8× 114 0.6× 35 606
Idris A. Ajia Saudi Arabia 13 513 0.8× 783 1.3× 358 0.7× 520 1.8× 167 0.8× 20 1.1k
Eun-Kyung Suh South Korea 10 346 0.6× 615 1.0× 283 0.6× 341 1.2× 133 0.6× 15 756
Mingsheng Xu China 14 343 0.5× 454 0.8× 336 0.7× 388 1.3× 164 0.8× 70 829
Johannes Ledig Germany 15 279 0.4× 467 0.8× 459 0.9× 201 0.7× 157 0.8× 33 711
C. Durand France 8 251 0.4× 370 0.6× 434 0.8× 238 0.8× 245 1.2× 8 706
Chao Lu China 13 676 1.1× 580 1.0× 321 0.6× 283 1.0× 101 0.5× 25 874
T. Salagaj United States 14 698 1.1× 717 1.2× 313 0.6× 240 0.8× 94 0.5× 27 949
Ayush Pandey United States 21 364 0.6× 486 0.8× 653 1.3× 319 1.1× 381 1.9× 50 1.0k
Fabian Schuster Germany 14 245 0.4× 381 0.6× 258 0.5× 223 0.8× 170 0.8× 29 573

Countries citing papers authored by Shibin Krishna

Since Specialization
Citations

This map shows the geographic impact of Shibin Krishna's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shibin Krishna with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shibin Krishna more than expected).

Fields of papers citing papers by Shibin Krishna

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shibin Krishna. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shibin Krishna. The network helps show where Shibin Krishna may publish in the future.

Co-authorship network of co-authors of Shibin Krishna

This figure shows the co-authorship network connecting the top 25 collaborators of Shibin Krishna. A scholar is included among the top collaborators of Shibin Krishna based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shibin Krishna. Shibin Krishna is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lu, Yi, Xiao Tang, Zhiyuan Liu, et al.. (2025). κ/β‐Ga2O3 Type‐II Phase Heterojunction. Advanced Materials. 37(8). e2406902–e2406902. 14 indexed citations
2.
Yuvaraja, Saravanan, Vishal Khandelwal, Shibin Krishna, et al.. (2024). Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors. ACS Applied Materials & Interfaces. 16(5). 6088–6097. 12 indexed citations
3.
Lu, Yi, Shibin Krishna, Xiao Tang, et al.. (2023). Thermal mismatch engineering induced freestanding and ultrathin Ga2O3 membrane for vertical electronics. Materials Today Physics. 36. 101181–101181. 9 indexed citations
4.
Lu, Yi, Shibin Krishna, Xiao Tang, et al.. (2022). Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector. ACS Applied Materials & Interfaces. 14(30). 34844–34854. 41 indexed citations
5.
Lu, Yi, Shibin Krishna, Che‐Hao Liao, et al.. (2022). Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation. ACS Applied Materials & Interfaces. 14(42). 47922–47930. 17 indexed citations
6.
Jain, Shubhendra Kumar, Pratibha Goel, Urvashi Varshney, et al.. (2021). Impact of thermal oxidation on the electrical transport and chemical & electronic structure of the GaN film grown on Si and sapphire substrates. Applied Surface Science Advances. 5. 100106–100106. 23 indexed citations
7.
Tang, Xiao, Kuang‐Hui Li, Che‐Hao Liao, et al.. (2021). Correction: Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations. Journal of Materials Chemistry C. 9(48). 17542–17542. 1 indexed citations
8.
Tang, Xiao, Kuang‐Hui Li, Che‐Hao Liao, et al.. (2021). Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations. Journal of Materials Chemistry C. 9(44). 15868–15876. 15 indexed citations
9.
Mishra, Monu, Abhiram Gundimeda, Shibin Krishna, et al.. (2018). Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors. ACS Omega. 3(2). 2304–2311. 45 indexed citations
10.
Jain, Shubhendra Kumar, Shibin Krishna, Neha Aggarwal, et al.. (2018). Effect of Metal Contacts on a GaN/Sapphire-Based MSM Ultraviolet Photodetector. Journal of Electronic Materials. 47(10). 6086–6090. 30 indexed citations
11.
Gundimeda, Abhiram, Shibin Krishna, Neha Aggarwal, et al.. (2017). Fabrication of non-polar GaN based highly responsive and fast UV photodetector. Applied Physics Letters. 110(10). 218 indexed citations
12.
Aggarwal, Neha, Shibin Krishna, Alka Sharma, et al.. (2017). A Highly Responsive Self‐Driven UV Photodetector Using GaN Nanoflowers. Advanced Electronic Materials. 3(5). 107 indexed citations
13.
Mishra, Monu, Shibin Krishna, Neha Aggarwal, & Govind Gupta. (2017). Influence of metallic surface states on electron affinity of epitaxial AlN films. Applied Surface Science. 407. 255–259. 25 indexed citations
14.
Mishra, Monu, Abhiram Gundimeda, Shibin Krishna, et al.. (2017). Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films. Physical Chemistry Chemical Physics. 19(13). 8787–8801. 21 indexed citations
15.
Mishra, Monu, Shibin Krishna, Neha Aggarwal, Abhiram Gundimeda, & Govind Gupta. (2017). Electronic structure and chemical state analysis of nanoflowers decorated GaN and AlGaN/GaN heterostructure. Journal of Alloys and Compounds. 708. 385–391. 10 indexed citations
16.
Krishna, Shibin, Neha Aggarwal, Mandeep Kaur, et al.. (2017). Enhanced current transport in GaN/AlN based single and double barrier heterostructures. Solar Energy Materials and Solar Cells. 170. 160–166. 5 indexed citations
17.
Krishna, Shibin, Neha Aggarwal, Monu Mishra, et al.. (2016). Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE. Physical Chemistry Chemical Physics. 18(11). 8005–8014. 33 indexed citations
18.
Krishna, Shibin, Neha Aggarwal, Monu Mishra, et al.. (2015). Epitaxial growth of high In-content In 0.41 Ga 0.59 N/GaN heterostructure on (11–20) Al 2 O 3 substrate. Journal of Alloys and Compounds. 658. 470–475. 17 indexed citations
19.
Mishra, Monu, et al.. (2015). A Comparative Photoelectron Spectroscopic Analysis of MBE and MOCVD Grown Epitaxial GaN Films. Science of Advanced Materials. 7(3). 546–551. 15 indexed citations
20.
Aggarwal, Neha, Shibin Krishna, Lalit Goswami, et al.. (2015). Extenuation of Stress and Defects in GaN Films Grown on a Metal–Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy. Crystal Growth & Design. 15(5). 2144–2150. 57 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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