Chongbiao Luan

1.1k total citations
67 papers, 887 citations indexed

About

Chongbiao Luan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Chongbiao Luan has authored 67 papers receiving a total of 887 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 37 papers in Condensed Matter Physics and 30 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Chongbiao Luan's work include GaN-based semiconductor devices and materials (37 papers), Ga2O3 and related materials (29 papers) and ZnO doping and properties (18 papers). Chongbiao Luan is often cited by papers focused on GaN-based semiconductor devices and materials (37 papers), Ga2O3 and related materials (29 papers) and ZnO doping and properties (18 papers). Chongbiao Luan collaborates with scholars based in China, Canada and Germany. Chongbiao Luan's co-authors include Zhaojun Lin, Zhanguo Wang, Yuanjie Lv, Ling‐Guo Meng, Zheng Li, Yuanjie Lv, Baozeng Zhou, Hong Chen, Wei Mi and Jinshi Zhao and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Chongbiao Luan

62 papers receiving 827 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chongbiao Luan China 17 499 456 421 401 268 67 887
Omkar Jani India 13 595 1.2× 347 0.8× 224 0.5× 334 0.8× 358 1.3× 37 885
Yanhui Xing China 13 227 0.5× 245 0.5× 233 0.6× 390 1.0× 122 0.5× 44 597
Zheyang Zheng Hong Kong 27 1.8k 3.7× 1.7k 3.8× 846 2.0× 429 1.1× 361 1.3× 118 2.2k
T. Yanai Japan 17 40 0.1× 264 0.6× 543 1.3× 216 0.5× 408 1.5× 113 872
Gaofei Tang Hong Kong 22 1.5k 3.0× 1.4k 3.1× 681 1.6× 309 0.8× 251 0.9× 38 1.7k
Yeong Jae Shin South Korea 11 243 0.5× 301 0.7× 503 1.2× 643 1.6× 197 0.7× 24 910
Kui Dang China 18 423 0.8× 543 1.2× 1.2k 2.9× 1.0k 2.6× 82 0.3× 38 1.5k
Xiangjun Xing China 14 119 0.2× 288 0.6× 234 0.6× 222 0.6× 346 1.3× 60 679
Haibo Yin China 15 483 1.0× 361 0.8× 254 0.6× 181 0.5× 177 0.7× 61 614

Countries citing papers authored by Chongbiao Luan

Since Specialization
Citations

This map shows the geographic impact of Chongbiao Luan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chongbiao Luan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chongbiao Luan more than expected).

Fields of papers citing papers by Chongbiao Luan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chongbiao Luan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chongbiao Luan. The network helps show where Chongbiao Luan may publish in the future.

Co-authorship network of co-authors of Chongbiao Luan

This figure shows the co-authorship network connecting the top 25 collaborators of Chongbiao Luan. A scholar is included among the top collaborators of Chongbiao Luan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chongbiao Luan. Chongbiao Luan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Mi, Wei, Linan He, Di Wang, et al.. (2024). Enhanced performance of ultraviolet photodetector based on amorphous Ga2O3 films through formation of heterojunction with ZnO nanoparticles. Materials Science in Semiconductor Processing. 173. 108174–108174. 6 indexed citations
4.
Li, Qing, Wei Mi, Di Wang, et al.. (2024). Fast response self-powered solar-blind UV photodetector based on NiO/Ga2O3 p-n junction. Materials Science in Semiconductor Processing. 186. 109084–109084. 7 indexed citations
5.
Luan, Chongbiao, et al.. (2022). All-solid-state pulsed current injection source based on the light initiated multi-gate semiconductor switches. Review of Scientific Instruments. 93(1). 14705–14705. 1 indexed citations
6.
Luan, Chongbiao, et al.. (2022). Performance of a Novel Rear-Triggered 4H-SiC Photoconductive Semiconductor Switch. IEEE Transactions on Electron Devices. 70(2). 627–632. 14 indexed citations
7.
Luan, Chongbiao, et al.. (2019). Architecting hierarchical shell porosity of hollow prussian blue‐derived iron oxide for enhanced Li storage. Journal of Microscopy. 276(2). 53–62. 6 indexed citations
8.
Li, Zheng, Baozeng Zhou, & Chongbiao Luan. (2019). Strain-tunable magnetic anisotropy in two-dimensional Dirac half-metals: nickel trihalides. RSC Advances. 9(61). 35614–35623. 24 indexed citations
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Wu, Jianwen, Wei Mi, Zhengchun Yang, et al.. (2019). Influence of annealing on the structural and optical properties of gallium oxide films deposited on c-sapphire substrate. Vacuum. 167. 6–9. 30 indexed citations
11.
Chen, Fu, Yuanjie Lv, Huan Liu, et al.. (2018). Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors. Scientific Reports. 8(1). 9036–9036. 13 indexed citations
12.
Yan, Yu, Wei Mi, Jinshi Zhao, et al.. (2018). Study of the metal-semiconductor contact to ZnO films. Vacuum. 155. 210–213. 9 indexed citations
13.
Chen, Fu, Zhaojun Lin, Yuanjie Lv, et al.. (2018). The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation. Applied Physics A. 124(4). 7 indexed citations
14.
Liu, Huan, Wei Lin, Zhaojun Lin, et al.. (2017). Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs. IEEE Transactions on Electron Devices. 64(3). 1038–1044. 41 indexed citations
15.
Liu, Yan, Zhaojun Lin, Chongbiao Luan, et al.. (2016). Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Modern Physics Letters B. 30(35). 1650411–1650411. 4 indexed citations
16.
Lin, Zhaojun, Chongbiao Luan, Jingtao Zhao, et al.. (2014). Analysis of interface trap states in InAlN/AlN/GaN heterostructures. Semiconductor Science and Technology. 29(9). 95011–95011. 6 indexed citations
17.
Luan, Chongbiao, Zhaojun Lin, Yuanjie Lv, et al.. (2014). Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Journal of Applied Physics. 116(4). 58 indexed citations
18.
Lv, Yuanjie, Zhihong Feng, Tingting Han, et al.. (2013). Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Applied Physics Letters. 103(11). 113502–113502. 11 indexed citations
19.
Lv, Yuanjie, Zhaojun Lin, Ling‐Guo Meng, et al.. (2012). Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors. Nanoscale Research Letters. 7(1). 434–434. 22 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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