Yiqiang Ni

508 total citations
42 papers, 426 citations indexed

About

Yiqiang Ni is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yiqiang Ni has authored 42 papers receiving a total of 426 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Condensed Matter Physics, 27 papers in Electrical and Electronic Engineering and 16 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yiqiang Ni's work include GaN-based semiconductor devices and materials (33 papers), Semiconductor materials and devices (20 papers) and Ga2O3 and related materials (16 papers). Yiqiang Ni is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), Semiconductor materials and devices (20 papers) and Ga2O3 and related materials (16 papers). Yiqiang Ni collaborates with scholars based in China, Japan and Egypt. Yiqiang Ni's co-authors include Yao Yao, Zhisheng Wu, Zhiyuan He, Fan Yang, Zhen Shen, Baijun Zhang, Yang Liu, Jian Zhong, Liang He and Yue Zheng and has published in prestigious journals such as Journal of Physics D Applied Physics, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Yiqiang Ni

34 papers receiving 405 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yiqiang Ni China 13 340 225 222 160 65 42 426
N. Zainal Malaysia 13 314 0.9× 206 0.9× 190 0.9× 236 1.5× 119 1.8× 73 484
Albert Minj Belgium 12 261 0.8× 229 1.0× 164 0.7× 207 1.3× 92 1.4× 48 476
An-Jye Tzou Taiwan 14 394 1.2× 335 1.5× 179 0.8× 246 1.5× 123 1.9× 32 571
Andrew Melton United States 13 275 0.8× 162 0.7× 150 0.7× 251 1.6× 127 2.0× 49 438
S. Rennesson France 11 302 0.9× 270 1.2× 141 0.6× 161 1.0× 146 2.2× 28 457
Izak Baranowski United States 11 342 1.0× 343 1.5× 235 1.1× 112 0.7× 116 1.8× 16 487
Ivor Guiney United Kingdom 12 252 0.7× 269 1.2× 121 0.5× 63 0.4× 65 1.0× 41 349
Yifan Yao United States 12 268 0.8× 194 0.9× 135 0.6× 151 0.9× 63 1.0× 26 367
B. Benbakhti United Kingdom 12 156 0.5× 305 1.4× 98 0.4× 125 0.8× 66 1.0× 39 412
Greeshma Chandan India 12 227 0.7× 197 0.9× 210 0.9× 218 1.4× 142 2.2× 18 442

Countries citing papers authored by Yiqiang Ni

Since Specialization
Citations

This map shows the geographic impact of Yiqiang Ni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yiqiang Ni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yiqiang Ni more than expected).

Fields of papers citing papers by Yiqiang Ni

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yiqiang Ni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yiqiang Ni. The network helps show where Yiqiang Ni may publish in the future.

Co-authorship network of co-authors of Yiqiang Ni

This figure shows the co-authorship network connecting the top 25 collaborators of Yiqiang Ni. A scholar is included among the top collaborators of Yiqiang Ni based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yiqiang Ni. Yiqiang Ni is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ren, Yan, Shengze Zhou, Chao Pang, et al.. (2025). Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes. Micromachines. 16(3). 288–288.
2.
Pang, Chao, et al.. (2024). The annealing treatment of interface states in planar and recessed-anode AlGaN/GaN Schottky barrier diodes. Micro and Nanostructures. 198. 208038–208038. 1 indexed citations
3.
He, Zhiyuan, Liang He, Kun Jiang, et al.. (2024). Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs. Journal of Physics D Applied Physics. 57(40). 405104–405104.
4.
He, Liang, Meng Dong, Yijun Shi, et al.. (2024). “M”-Shaped Threshold Voltage Shift Induced by Competitive Positive/Negative Gate Switching Stress in Schottky-Type p-GaN Gate HEMTs. IEEE Electron Device Letters. 45(12). 2299–2302. 2 indexed citations
5.
Tang, Hui, Ke Zhang, Yiqiang Ni, et al.. (2023). Investigation of Off-state Stress Time-Dependent Dynamic On-resistance of Commercial High Voltage GaN HEMTs. 965–968. 2 indexed citations
6.
Jiang, Kun, Yiqiang Ni, Jun Liu, et al.. (2023). Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress. Journal of Physics Conference Series. 2645(1). 12016–12016.
7.
He, Liang, Yiqiang Ni, Liuan Li, et al.. (2021). Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor. IEICE Electronics Express. 18(19). 20210332–20210332. 3 indexed citations
8.
9.
Li, Enliang, et al.. (2020). Resistive Failure Localization of Electronic Components by Lock-in Thermography. 1–4. 3 indexed citations
10.
He, Liang, Fan Yang, Yao Yao, et al.. (2019). A review of selective area grown recess structure for insulated-gate E-mode GaN transistors. Japanese Journal of Applied Physics. 59(SA). SA0806–SA0806. 11 indexed citations
11.
He, Liang, Liuan Li, Yiqiang Ni, et al.. (2018). High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure. IEEE Electron Device Letters. 39(11). 1720–1723. 30 indexed citations
12.
He, Liang, Fan Yang, Liuan Li, et al.. (2017). High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth. IEEE Transactions on Electron Devices. 64(4). 1554–1560. 28 indexed citations
13.
Shen, Zhen, Yao Yao, Fan Yang, et al.. (2016). Investigation of O3‐Al2O3/H2O‐Al2O3 dielectric bilayer deposited by atomic‐layer deposition for GaN MOS capacitors. physica status solidi (a). 213(10). 2693–2698. 11 indexed citations
14.
He, Liang, Fan Yang, Yiqiang Ni, et al.. (2016). A novel normally-off GaN MISFET with an in-situ AlN space layer using selective area growth. 111–114. 1 indexed citations
15.
Chen, Zijun, Liuan Li, Yue Zheng, et al.. (2016). Influence of the Aln/Gan superlattices buffer thickness on the electrical properties of Algan/Gan HFET on Si substrate. 89–92. 3 indexed citations
16.
Yang, Fan, Liang He, Yue Zheng, et al.. (2016). Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure. Journal of Materials Science Materials in Electronics. 27(9). 9061–9066. 2 indexed citations
17.
Zhong, Jian, Yao Yao, Yue Zheng, et al.. (2015). Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode. Chinese Physics B. 24(9). 97303–97303. 5 indexed citations
18.
Ni, Yiqiang, Zijun Chen, Yue Zheng, et al.. (2015). Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate. Semiconductor Science and Technology. 30(10). 105037–105037. 15 indexed citations
19.
Yao, Yao, Zhiyuan He, Fan Yang, et al.. (2013). Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique. Applied Physics Express. 7(1). 16502–16502. 32 indexed citations
20.
Ni, Yiqiang, Zhiyuan He, Jian Zhong, et al.. (2013). Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers. Chinese Physics B. 22(8). 88104–88104. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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