H. C. Casey

9.3k citations

88 papers · 6.8k indexed · 4 hit papers · h-index 36

Impact in

Atomic and Molecular Physics, and Optics top 0.2%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials

Papers in

Atomic and Molecular Physics, and Optics 62
- Semiconductor Quantum Structures and Devices 40
- Semiconductor materials and interfaces 25
Condensed Matter Physics 14
- GaN-based semiconductor devices and materials 13

Co-authors: M. B. Panish T. A. Roth D. D. Sell Frank Stern K. W. Wecht John F. Muth Steven P. DenBaars B.P. Keller
Journals: Journal of Applied Physics (30 papers)Applied Physics Letters (26 papers)Journal of The Electrochemical Society (3 papers)IEEE Transactions on Electron Devices (3 papers)Journal of Physics and Chemistry of Solids (3 papers)
Partner nations: United States Japan Bulgaria

In The Last Decade

H. C. Casey

87 papers receiving 5.9k citations

Hit Papers

align trajectories log scale

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements 1997 · 629 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1997 Applied Physics Letters
1979 Journal of The Electrochemical Society
1976 Journal of Applied Physics
1975 Journal of Applied Physics

Peers

Countries citing papers authored by H. C. Casey

Since Specialization

Citations

This map shows the geographic impact of H. C. Casey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. C. Casey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. C. Casey more than expected).

Fields of papers citing papers by H. C. Casey

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. C. Casey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. C. Casey. The network helps show where H. C. Casey may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. C. Casey, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. C. Casey Line = papers co-authored together H. C. Casey links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Ultrafast optical measurements on InGaN multiple quantum wells APS March Meeting Abstracts ·Michael Bergmann, Ü. Özgür, H. C. Casey, Henry O. Everitt	2000	0
2	Ultrasonic Imaging Using Optoelectronic Transmitters Ultrasonic Imaging ·T. Fujimori, H. C. Casey, Stephen W. Smith	1998	1
3	Optoelectronic transmitters for medical ultrasound transducers IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control ·T. Fujimori, J. C. Swartz, H. C. Casey, S.W. Smith	1995	6
4	Current-voltage and capacitance-voltage behavior of high-resistivity (AlxGa1−x)yIn1−yP on GaAs Applied Physics Letters ·H. C. Casey, Frans-Erik Bergløf, O. Platas Barradas, Muhammad Lal, G. B. Stringfellow	1989	3
5	Surface recombination current and emitter compositional grading in N p n and P n p GaAs/AlxGa1−xAs heterojunction bipolar transistors Applied Physics Letters ·T. J. de Lyon, H. C. Casey, P.M. Enquist, J.A. Hutchby, A. J. SpringThorpe	1989	18
6	Variation of intervalence band absorption with hole concentration in p-type InP Applied Physics Letters ·H. C. Casey, Jack. Merritt	1984	58
7	Investigation of heterojunctions for MIS devices with oxygen-doped AlxGa1−xAs on n-type GaAs Journal of Applied Physics ·H. C. Casey, A. Y. Cho, D. V. Lang, E. H. Nicollian, P. W. Foy	1979	45
8	Room-temperature threshold-current dependence of GaAs-AlxGa1−xAs double-heterostructure lasers on x and active-layer thickness Journal of Applied Physics ·H. C. Casey	1978	114
9	Heterostructure lasers. Part A. Fundamental principles OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·H. C. Casey, M. B. Panish	1978	232
10	Continuous room-temperature operation of GaAs-AlxGa1−xAs double-heterostructure lasers prepared by molecular-beam epitaxy Applied Physics Letters ·W.J. Streich, R. W. Dixon, H. C. Casey, R. L. Hartman	1976	56
11	Influence of AlxGa1−xAs layer thickness on threshold current density and differential quantum efficiency for GaAs−AlxGa1−xAs DH lasers Journal of Applied Physics ·H. C. Casey, M. B. Panish	1975	10
12	Properties of Schottky barriers and p-n junctions prepared with GaAs and Alx Ga1−x As molecular beam epitaxial layers Journal of Applied Physics ·Shiyi Jin, H. C. Casey	1974	13
13	Molecular beam epitaxy: A technique for growth of GaAs-Al_xGa_1-xAs heterostructure lasers IEEE Journal of Quantum Electronics ·Ann Cho, H. C. Casey	1974	1
14	IV-3 GaAs-Al_xGa_1-xAs double-heterostructure lasers prepared by molecular-beam epitaxy IEEE Transactions on Electron Devices ·Katharine Larking, H. C. Casey	1974	1
15	Carrier Transport and Potential Distributions for a Semiconductorp−nJunction in the Relaxation Regime Physical Review Letters ·H. J. Queisser, H. C. Casey, W. van Roosbroeck	1971	47
16	Cathodoluminescent Measurements in GaP (Zn, O) Journal of Applied Physics ·H. C. Casey, Chengyun Yang	1971	32
17	Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps Journal of Applied Physics ·H. C. Casey, M. B. Panish	1969	116
18	Variation of Electrical Properties with Zn Concentration in GaP Journal of Applied Physics ·H. C. Casey, F. Ermanis, K. B. Wolfstirn	1969	100
19	Influence of Bulk and Surface Properties on Image Sensing Silicon Diode Arrays Bell System Technical Journal ·T.M. Buck, H. C. Casey, 真由美高橋, Ashwini Maidamshetti	1968	51
20	Dependence of the Diffusion Coefficient on the Fermi Level: Zinc in Gallium Arsenide Physical Review ·H. C. Casey, M. B. Panish, L. L. Chang	1967	71

About H. C. Casey

H. C. Casey is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Surfaces, Coatings and Films and Electronic, Optical and Magnetic Materials, having authored 88 papers that have together received 6.8k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (40 papers), Semiconductor materials and interfaces (25 papers), Semiconductor materials and devices (25 papers), Semiconductor Lasers and Optical Devices (15 papers), GaN-based semiconductor devices and materials (13 papers), Advanced Semiconductor Detectors and Materials (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Silicon and Solar Cell Technologies (8 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (4.8k citations), Condensed Matter Physics (1.4k citations), Electrical and Electronic Engineering (5.2k citations), Surfaces, Coatings and Films (295 citations) and Materials Chemistry (1.5k citations). H. C. Casey has collaborated with scholars based in United States, Japan and Bulgaria. Frequent co-authors include M. B. Panish, T. A. Roth, D. D. Sell, Frank Stern, K. W. Wecht, John F. Muth, Steven P. DenBaars, B.P. Keller, E. Buehler and W. van Roosbroeck. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and Journal of Physics and Chemistry of Solids.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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