F. Ermanis

620 total citations
20 papers, 488 citations indexed

About

F. Ermanis is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F. Ermanis has authored 20 papers receiving a total of 488 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in F. Ermanis's work include Semiconductor materials and devices (9 papers), Semiconductor Quantum Structures and Devices (7 papers) and Semiconductor materials and interfaces (5 papers). F. Ermanis is often cited by papers focused on Semiconductor materials and devices (9 papers), Semiconductor Quantum Structures and Devices (7 papers) and Semiconductor materials and interfaces (5 papers). F. Ermanis collaborates with scholars based in United States. F. Ermanis's co-authors include K. B. Wolfstirn, B. Schwartz, H. C. Casey, Albert Chin, I. Hayashi, M. A. DiGiuseppe, Elisa M. Miller, L. C. Feldman, I. Camlibel and L. C. Luther and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

F. Ermanis

20 papers receiving 384 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Ermanis United States 13 366 330 124 48 42 20 488
Z. Liliental United States 8 411 1.1× 192 0.6× 124 1.0× 40 0.8× 26 0.6× 17 525
P. D. Augustus United Kingdom 14 315 0.9× 273 0.8× 135 1.1× 19 0.4× 56 1.3× 27 450
John E. Davey United States 15 363 1.0× 305 0.9× 182 1.5× 26 0.5× 52 1.2× 39 510
W. Nijman Netherlands 8 245 0.7× 246 0.7× 100 0.8× 37 0.8× 26 0.6× 12 347
J. S. Park United States 7 336 0.9× 292 0.9× 159 1.3× 23 0.5× 47 1.1× 9 451
E. Koppensteiner Austria 13 276 0.8× 294 0.9× 191 1.5× 80 1.7× 38 0.9× 27 458
K. E. Strege United States 11 358 1.0× 343 1.0× 116 0.9× 45 0.9× 36 0.9× 18 508
K. Werner Netherlands 13 424 1.2× 308 0.9× 131 1.1× 74 1.5× 24 0.6× 36 509
S. M. Mokler United Kingdom 14 345 0.9× 273 0.8× 154 1.2× 32 0.7× 55 1.3× 32 476
Keung L. Luke United States 12 416 1.1× 302 0.9× 119 1.0× 30 0.6× 22 0.5× 27 527

Countries citing papers authored by F. Ermanis

Since Specialization
Citations

This map shows the geographic impact of F. Ermanis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Ermanis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Ermanis more than expected).

Fields of papers citing papers by F. Ermanis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Ermanis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Ermanis. The network helps show where F. Ermanis may publish in the future.

Co-authorship network of co-authors of F. Ermanis

This figure shows the co-authorship network connecting the top 25 collaborators of F. Ermanis. A scholar is included among the top collaborators of F. Ermanis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Ermanis. F. Ermanis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
DiGiuseppe, M. A., Albert Chin, F. Ermanis, & L. J. Peticolas. (1985). Preservation of InP substrates in vapor phase epitaxy: The effect of excess PH3. Journal of Crystal Growth. 73(2). 311–315. 3 indexed citations
2.
Chin, Albert, et al.. (1984). Failure mode analysis of planar zinc-diffused In0.53Ga0.47As p-i-n photodiodes. Journal of Applied Physics. 55(6). 1596–1606. 15 indexed citations
3.
Ermanis, F., et al.. (1983). Origin and Elimination of Crescent‐Shaped Growth Defects in LPE Layers of InGaAs / InP Alloys. Journal of The Electrochemical Society. 130(6). 1381–1383. 4 indexed citations
4.
Dutt, B. V., et al.. (1983). The origin and elimination of Si pyramids in (Ga, Al)As: Si LEDs. Journal of Crystal Growth. 62(1). 21–26. 3 indexed citations
5.
Chin, Albert, et al.. (1983). The migration of gold from the p-contact as a source of dark spot defects in InP/InGaAsP LED's. IEEE Transactions on Electron Devices. 30(4). 304–310. 22 indexed citations
6.
Temkin, H., W. B. Joyce, Albert Chin, M. A. DiGiuseppe, & F. Ermanis. (1982). Effect of p-n junction position on the performance of InGaAsP light emitting diodes. Applied Physics Letters. 41(8). 745–747. 4 indexed citations
7.
Camlibel, I., et al.. (1982). Metallurgical Behavior of Gold‐Based Ohmic Contacts to the InP / InGaAsP Material System. Journal of The Electrochemical Society. 129(11). 2585–2590. 29 indexed citations
8.
Luther, L. C., R. C. LeCraw, & F. Ermanis. (1982). Bismuth content and growth-induced anisotropy in YLuBiIG. Journal of Crystal Growth. 58(1). 95–102. 16 indexed citations
9.
Chin, Albert, et al.. (1982). Cathodoluminescence evaluation of dark spot defects in InP/InGaAsP light-emitting diodes. Applied Physics Letters. 41(6). 555–557. 20 indexed citations
10.
Chin, Albert, et al.. (1981). Stress‐Induced Dark Line Defect Formation in GaAlAs : Si LED's. Journal of The Electrochemical Society. 128(3). 661–669. 10 indexed citations
11.
Chang, C. C., T. T. Sheng, R. J. McCoy, et al.. (1979). Transmission electron microscopy of Au-based Ohmic contacts to n-AlxGa1−xAs. Journal of Applied Physics. 50(11). 7030–7033. 7 indexed citations
12.
Schwartz, B., et al.. (1976). The Anodization of GaAs and GaP in Aqueous Solutions. Journal of The Electrochemical Society. 123(7). 1089–1097. 29 indexed citations
13.
Ermanis, F. & B. Schwartz. (1974). Anodic Oxidation of Gallium Phosphide in Aqueous Hydrogen Peroxide. Journal of The Electrochemical Society. 121(12). 1665–1665. 7 indexed citations
14.
Feldman, L. C., et al.. (1973). The combined use of He back-scattering and He-induced X-rays in the study of anodically grown oxide films on GaAs. Thin Solid Films. 19(1). 81–89. 43 indexed citations
15.
Casey, H. C., F. Ermanis, L. C. Luther, L. R. Dawson, & H. W. Verleur. (1971). Electrical Properties of Sn-Doped GaP. Journal of Applied Physics. 42(5). 2130–2131. 12 indexed citations
16.
Ermanis, F., et al.. (1970). Germanium-Doped Gallium Arsenide. Journal of Applied Physics. 41(1). 264–270. 78 indexed citations
17.
Casey, H. C., F. Ermanis, & K. B. Wolfstirn. (1969). Variation of Electrical Properties with Zn Concentration in GaP. Journal of Applied Physics. 40(7). 2945–2958. 100 indexed citations
18.
Ermanis, F., H. C. Casey, & K. B. Wolfstirn. (1968). Thermal Ionization Energies of Cd and Zn in GaP. Journal of Applied Physics. 39(10). 4856–4857. 12 indexed citations
19.
Ermanis, F. & K. B. Wolfstirn. (1966). Hall Effect and Resistivity of Zn-Doped GaAs. Journal of Applied Physics. 37(5). 1963–1966. 51 indexed citations
20.
Ermanis, F. & Elisa M. Miller. (1961). The Semiconducting Properties of CdSb. Journal of The Electrochemical Society. 108(11). 1048–1048. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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