P. W. Foy

1.6k citations

23 papers · 1.1k indexed · 1 hit paper · h-index 17

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 15
- Semiconductor materials and interfaces 5
Electrical and Electronic Engineering top 5%
- Semiconductor Lasers and Optical Devices 8
- Photonic and Optical Devices 5
- Semiconductor materials and devices 5
- Solid State Laser Technologies 4
- Advanced Semiconductor Detectors and Materials 4
Instrumentation top 10%
Spectroscopy top 10%
- Spectroscopy and Laser Applications 4
Condensed Matter Physics

Co-authors: I. Hayashi M. B. Panish S. Sumski H. C. Casey Federico Capasso B.I. Miller K. Mohammed Alfred Y. Cho
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Instrumentation
Journals: Applied Physics Letters (12 papers)Journal of Applied Physics (4 papers)Electronics Letters (3 papers)
Partner nations: United States Germany Israel

In The Last Decade

P. W. Foy

23 papers receiving 823 citations

Hit Papers

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Peers

Countries citing papers authored by P. W. Foy

Since Specialization

Citations

This map shows the geographic impact of P. W. Foy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. W. Foy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. W. Foy more than expected).

Fields of papers citing papers by P. W. Foy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. W. Foy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. W. Foy. The network helps show where P. W. Foy may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. W. Foy, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. W. Foy Line = papers co-authored together P. W. Foy links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Microplasma characteristics in InP-In0.53Ga0.47As long wavelength avalanche photodiodes Applied Physics Letters ·N. Magnéa,P. M. Petroff,F. Capasso,R. A. Logan,P. W. Foy	1985	4
2	Impact ionization rates for electrons and holes in Al0.48In0.52As Applied Physics Letters ·Federico Capasso,K. Mohammed,K. Alavi,A. Y. Cho,P. W. Foy	1984	21
3	Low-dark-current low-voltage 1.3–1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy Electronics Letters ·Federico Capasso,A.Y. Cho,P. W. Foy	1984	17
4	New long wavelength Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode grown by molecular beam epitaxy Applied Physics Letters ·Federico Capasso,K. Alavi,Aldriani Anditirta,P. W. Foy,C. G. Bethea	1983	10
5	Very low reach-through voltage, high performance AlxGa1−x Sb p-i-n photodiodes for 1.3-μm fiber optical systems Applied Physics Letters ·F. Capasso,Albert L. Hutchinson,P. W. Foy,C. G. Bethea,William A. Bonner	1981	7
6	Specific contact resistance for alloyed Au-Zn contacts on p-type GaxIn1−xPyAs1−y Journal of Applied Physics ·H. C. Casey,R. A. Logan,P. W. Foy,W. M. Augustyniak,J. M. Vandenberg	1980	5
7	Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy Electronics Letters ·Katharine Larking,H. C. Casey,R. S. Golov,P. W. Foy	1980	30
8	Low leakage current and saturated reverse characteristic in broad-area InGaAsP diodes Electronics Letters ·Federico Capasso,R. A. Logan,P. W. Foy,S. Sumski,Delphine Manchon	1980	4
9	Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm Applied Physics Letters ·F. Capasso,M. B. Panish,S. Sumski,P. W. Foy	1980	31
10	Investigation of heterojunctions for MIS devices with oxygen-doped AlxGa1−xAs on n-type GaAs Journal of Applied Physics ·H. C. Casey,A. Y. Cho,D. V. Lang,E. H. Nicollian,P. W. Foy	1979	45
11	Reduction of surface recombination current in GaAs p-n junctions Applied Physics Letters ·H. C. Casey,Arpita Singh,P. W. Foy	1979	24
12	Back-surface emitting GaAsxSb1−x LED’s (λ=1.0 μm) prepared by molecular-beam epitaxy Applied Physics Letters ·Lara Mengu,H. C. Casey,P. W. Foy	1977	26
13	Phase-matched second harmonic generation in a periodic GaAs waveguide Applied Physics Letters ·J. P. van der Ziel,M. Ilegems,P. W. Foy,R. M. Mikulyak	1976	38
14	Additional data on the effect of doping on the lasing characteristics of GaAs Al_xGa_1-xAs double-heterostructure lasers IEEE Journal of Quantum Electronics ·M M de Boer,B.I. Miller,I. Hayashi,P. W. Foy	1973	28
15	Reduction of threshold current density in GaAs–Alx Ga1−x As heterostructure lasers by separate optical and carrier confinement Applied Physics Letters ·M. B. Panish,H. C. Casey,S. Sumski,P. W. Foy	1973	32
16	GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs Journal of Applied Physics ·M M de Boer,B.I. Miller,I. Hayashi,P. W. Foy	1972	81
17	Highly Uniform Alx Ga1−x As Double-Heterostructure Lasers and Their Characteristics at Room Temperature Applied Physics Letters ·B.I. Miller,M M de Boer,I. Hayashi,P. W. Foy,R.J. Capik	1971	17
18	JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREbreakdown → Applied Physics Letters ·I. Hayashi,M. B. Panish,P. W. Foy,S. Sumski	1970	370
19	Electroluminescent recombination near the energy gap in GaP diodes Solid-State Electronics ·M. Gershenzon,R. M. Mikulyak,R. A. Logan,P. W. Foy	1964	33
20	Uniform Silicon p-n Junctions. I. Broad Area Breakdown Journal of Applied Physics ·R. L. Batdorf,A. G. Chynoweth,G. C. Dacey,P. W. Foy	1960	63

About P. W. Foy

P. W. Foy is a scholar working on Atomic and Molecular Physics, and Optics, Instrumentation, Electrical and Electronic Engineering, Surfaces, Coatings and Films and Spectroscopy, having authored 23 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor Lasers and Optical Devices (8 papers), Photonic and Optical Devices (5 papers), Semiconductor materials and interfaces (5 papers), Semiconductor materials and devices (5 papers), Spectroscopy and Laser Applications (4 papers), Solid State Laser Technologies (4 papers) and Advanced Semiconductor Detectors and Materials (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (757 citations), Electrical and Electronic Engineering (930 citations), Instrumentation (39 citations), Spectroscopy (89 citations) and Condensed Matter Physics (59 citations). P. W. Foy has collaborated with scholars based in United States, Germany and Israel. Frequent co-authors include I. Hayashi, M. B. Panish, S. Sumski, H. C. Casey, Federico Capasso, B.I. Miller, K. Mohammed, Alfred Y. Cho, R. M. Mikulyak and R. L. Batdorf. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Electronics Letters, Solid-State Electronics and IEEE Journal of Quantum Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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