L. Passari

581 total citations
23 papers, 479 citations indexed

About

L. Passari is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L. Passari has authored 23 papers receiving a total of 479 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in L. Passari's work include Silicon and Solar Cell Technologies (13 papers), Semiconductor materials and interfaces (10 papers) and Thin-Film Transistor Technologies (5 papers). L. Passari is often cited by papers focused on Silicon and Solar Cell Technologies (13 papers), Semiconductor materials and interfaces (10 papers) and Thin-Film Transistor Technologies (5 papers). L. Passari collaborates with scholars based in Italy, Egypt and Nigeria. L. Passari's co-authors include F. Mousty, P. Ostoja, A. Paoletti, M.C. Carotta, G. Martinelli, T. Federighi, M. Merli, Maria Angela Butturi, R. Van Steenwinkel and G. M. Youssef and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

L. Passari

23 papers receiving 437 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. Passari Italy	10	300	219	151	91	86	23	479
F. C. T. So United States	11	359 1.2×	211 1.0×	196 1.3×	51 0.6×	103 1.2×	19	473
Z.G. Liu China	11	223 0.7×	74 0.3×	346 2.3×	83 0.9×	112 1.3×	25	462
F. Legoues United States	10	266 0.9×	192 0.9×	145 1.0×	78 0.9×	60 0.7×	14	493
Marc Chason United States	10	90 0.3×	105 0.5×	206 1.4×	56 0.6×	64 0.7×	26	404
Hirokatsu Yashiro Japan	15	620 2.1×	129 0.6×	87 0.6×	77 0.8×	143 1.7×	49	699
J.C. Blair United States	10	368 1.2×	177 0.8×	104 0.7×	34 0.4×	211 2.5×	14	442
K. D. Leaver United Kingdom	11	89 0.3×	177 0.8×	67 0.4×	41 0.5×	137 1.6×	33	326
X.‐A. Zhao United States	11	214 0.7×	127 0.6×	224 1.5×	41 0.5×	104 1.2×	23	442
Z. J. Radzimski United States	16	554 1.8×	213 1.0×	197 1.3×	72 0.8×	74 0.9×	55	696

Countries citing papers authored by L. Passari

Since Specialization

Citations

This map shows the geographic impact of L. Passari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Passari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Passari more than expected).

Fields of papers citing papers by L. Passari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Passari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Passari. The network helps show where L. Passari may publish in the future.

Co-authorship network of co-authors of L. Passari

This figure shows the co-authorship network connecting the top 25 collaborators of L. Passari. A scholar is included among the top collaborators of L. Passari based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Passari. L. Passari is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Butturi, Maria Angela, M.C. Carotta, G. Martinelli, et al.. (1997). Effects of ageing on porous silicon photoluminescence: Correlation with FTIR and UV-Vis spectra. Solid State Communications. 101(1). 11–16. 27 indexed citations

Passari, L., et al.. (1996). The effects of oxygen precipitates on the electrical properties of silver impurities in p-type silicon. physica status solidi (a). 156(1). 169–174. 2 indexed citations

Passari, L., et al.. (1996). Electrical Properties of Silver Impurities and their Annealing Behaviour in p-Type Fz Silicon. Journal de Physique III. 6(12). 1691–1696. 3 indexed citations

Martinelli, G., et al.. (1995). A study of the moisture effects on SnO2 thick films by sensitivity and permittivity measurements. Sensors and Actuators B Chemical. 26(1-3). 53–55. 28 indexed citations

Carotta, M.C., et al.. (1991). CH4 thick-film gas sensors: Characterization method and theoretical explanation. Sensors and Actuators B Chemical. 3(3). 191–196. 40 indexed citations

Steenwinkel, R. Van, M.C. Carotta, G. Martinelli, M. Merli, & L. Passari. (1990). Lifetime measurements in solar cells of various thicknesses and the related silicon wafers. Solar Cells. 28(4). 287–292. 8 indexed citations

Poggi, Antonella, et al.. (1989). RTA-induced defects: a comparison between lamp and electron beam techniques. Materials Science and Engineering B. 4(1-4). 231–235. 1 indexed citations

Passari, L., et al.. (1988). Determination of minority carrier mobility in silicon from stationary and transient lifetime measurements. physica status solidi (a). 106(2). 583–587. 9 indexed citations

Lulli, G., et al.. (1987). Minority Carrier Lifetime in Furnace and E‐Beam Annealed CZ Silicon. Journal of The Electrochemical Society. 134(5). 1239–1243. 4 indexed citations

10.

Carotta, M.C., et al.. (1986). Minority electron diffusion coefficient from lifetime measurement combination. Applied Physics Letters. 49(1). 44–45. 8 indexed citations

11.

Negrini, P., et al.. (1985). Lattice disorder and recombination centres in heat-treated FZ silicon. physica status solidi (a). 92(1). 177–185. 7 indexed citations

12.

Passari, L., et al.. (1983). Recombination mechanisms and doping density in silicon. Journal of Applied Physics. 54(7). 3935–3937. 58 indexed citations

13.

Finetti, M., et al.. (1976). Comparison of experimental and theoretical carrier concentrations in heavily doped n-type silicon. Journal of Applied Physics. 47(10). 4590–4592. 10 indexed citations

14.

Mousty, F., P. Ostoja, & L. Passari. (1974). Relationship between resistivity and phosphorus concentration in silicon. Journal of Applied Physics. 45(10). 4576–4580. 130 indexed citations

15.

Paoletti, A., et al.. (1966). Magnetization and State of Order in MnNi3. Journal of Applied Physics. 37(8). 3236–3239. 23 indexed citations

16.

Mezzetti, F. & L. Passari. (1966). Low frequency internal friction of Al-Al2O3 dispersed-phase alloys (SAP). Journal of Nuclear Materials. 18(1). 70–75. 2 indexed citations

17.

Nobili, D. & L. Passari. (1965). Electrical resistivity measurements in quenched aluminium-alumina alloys. Journal of Nuclear Materials. 16(3). 344–346. 4 indexed citations

18.

Paoletti, A. & L. Passari. (1964). A polarized neutron investigation of the Fe3Si alloy. Il Nuovo Cimento. 32(1). 25–32. 66 indexed citations

19.

Antonini, B., et al.. (1964). Magnetism research with polarized neutrons at the Centro di Studi Nucleari della Casaccia del C. N. E. N., Roma, Italy. Journal de Physique. 25(5). 604–609. 4 indexed citations

20.

Federighi, T. & L. Passari. (1959). Anomalous increase of resistivity during ageing of aluminium-silver alloys. Acta Metallurgica. 7(6). 422–424. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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