E. Albertazzi

927 total citations
28 papers, 769 citations indexed

About

E. Albertazzi is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E. Albertazzi has authored 28 papers receiving a total of 769 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 17 papers in Computational Mechanics and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E. Albertazzi's work include Ion-surface interactions and analysis (17 papers), Silicon and Solar Cell Technologies (14 papers) and Semiconductor materials and interfaces (9 papers). E. Albertazzi is often cited by papers focused on Ion-surface interactions and analysis (17 papers), Silicon and Solar Cell Technologies (14 papers) and Semiconductor materials and interfaces (9 papers). E. Albertazzi collaborates with scholars based in Italy, Germany and Belgium. E. Albertazzi's co-authors include G. Lulli, M. Bianconi, Roberta Nipoti, Francesco Zerbetto, J. Shukla, N. Sato, Edwin K. Schneider, James L. Kinter, David A. Randall and P. J. Sellers and has published in prestigious journals such as Journal of the American Chemical Society, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

E. Albertazzi

28 papers receiving 703 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Albertazzi Italy	12	261	241	217	197	162	28	769
Brian D. Swanson United States	17	70 0.3×	184 0.8×	65 0.3×	202 1.0×	367 2.3×	25	902
S. Kraft Germany	15	218 0.8×	117 0.5×	90 0.4×	185 0.9×	60 0.4×	92	1.0k
Denis Duft Germany	18	461 1.8×	115 0.5×	270 1.2×	212 1.1×	334 2.1×	28	1.1k
I. Sumita Japan	25	210 0.8×	177 0.7×	173 0.8×	17 0.1×	186 1.1×	59	1.4k
M. Woźniak Poland	11	74 0.3×	57 0.2×	50 0.2×	65 0.3×	98 0.6×	25	399
D. L. Knies United States	13	113 0.4×	125 0.5×	49 0.2×	103 0.5×	96 0.6×	59	528
J. Dorschner Germany	20	40 0.2×	112 0.5×	54 0.2×	74 0.4×	224 1.4×	90	2.0k
T. G. Owano United States	17	390 1.5×	228 0.9×	86 0.4×	192 1.0×	323 2.0×	48	1.2k
M. A. Rutgers United States	10	29 0.1×	176 0.7×	282 1.3×	36 0.2×	30 0.2×	10	505
L. P. J. Kamp Netherlands	14	67 0.3×	137 0.6×	195 0.9×	20 0.1×	65 0.4×	65	714

Countries citing papers authored by E. Albertazzi

Since Specialization

Citations

This map shows the geographic impact of E. Albertazzi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Albertazzi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Albertazzi more than expected).

Fields of papers citing papers by E. Albertazzi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Albertazzi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Albertazzi. The network helps show where E. Albertazzi may publish in the future.

Co-authorship network of co-authors of E. Albertazzi

This figure shows the co-authorship network connecting the top 25 collaborators of E. Albertazzi. A scholar is included among the top collaborators of E. Albertazzi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Albertazzi. E. Albertazzi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lulli, G., et al.. (2006). Defect-induced homogeneous amorphization of silicon: the role of defect structure and population. Journal of Physics Condensed Matter. 18(6). 2077–2088. 5 indexed citations

Lulli, G., E. Albertazzi, M. Bianconi, et al.. (2005). Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 230(1-4). 613–618. 4 indexed citations

Bianconi, M., et al.. (2005). Channeling characterization of defects in silicon: an atomistic approach. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 230(1-4). 185–192. 14 indexed citations

Satta, A., E. Albertazzi, G. Lulli, & Luciano Colombo. (2005). Ab initiostructures ofAsmVcomplexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon. Physical Review B. 72(23). 11 indexed citations

Satta, A., et al.. (2005). Atomistic simulation of ion channeling in heavily doped Si:As. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 230(1-4). 112–117. 7 indexed citations

Lulli, G., et al.. (2004). Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters. Physical Review B. 69(16). 9 indexed citations

Lulli, G., et al.. (2003). Computer simulation of ion channeling in Si containing structurally relaxed point defects. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 211(1). 50–54. 4 indexed citations

Lulli, G., et al.. (2002). Channeling energy loss of He2+ in Si by transmission and back-scattering measurements: Experiments and computer modeling. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 193(1-4). 103–108. 3 indexed citations

Albertazzi, E., et al.. (2002). Atomistic modeling of ion channeling in Si with point defects: The role of lattice relaxation. Physical review. B, Condensed matter. 66(4). 17 indexed citations

10.

Colombo, Luciano, et al.. (2001). Low-energy recoils in crystalline silicon: Quantum simulations. Physical review. B, Condensed matter. 63(19). 19 indexed citations

11.

Lulli, G., E. Albertazzi, Roberta Nipoti, M. Bianconi, & A. Carnera. (2001). The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects. Materials science forum. 353-356. 599–602. 4 indexed citations

12.

Lulli, G., et al.. (2000). Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 170(1-2). 1–9. 46 indexed citations

13.

Albertazzi, E., Cármen Domene, Patrick W. Fowler, et al.. (1999). Pentagon adjacency as a determinant of fullerene stability. Physical Chemistry Chemical Physics. 1(12). 2913–2918. 157 indexed citations

14.

Bianconi, M., et al.. (1998). RBS-channeling analysis of virgin 6HSiC: Experiments and Monte Carlo simulations. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 136-138. 1267–1271. 7 indexed citations

15.

Lulli, G., E. Albertazzi, M. Bianconi, et al.. (1997). Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si. Journal of Applied Physics. 82(12). 5958–5964. 32 indexed citations

16.

Bianconi, M., et al.. (1997). RBS-channeling determination of damage profiles in fully relaxed Si0.76Ge0.24 implanted with 2 MeV Si ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 122(4). 689–695. 10 indexed citations

17.

Albertazzi, E., et al.. (1996). Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 118(1-4). 128–132. 52 indexed citations

18.

Priolo, F., C. Spinella, E. Albertazzi, et al.. (1996). Ion implantation induced damage in relaxed Si0.75Ge0.25. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 112(1-4). 301–304. 6 indexed citations

19.

Albertazzi, E. & Francesco Zerbetto. (1992). Local density functional theory calculation of the in-plane force field and vibrational frequencies of conjugated molecules: benzene and octatetraene. Chemical Physics. 164(1). 91–97. 9 indexed citations

20.

Sato, N., P. J. Sellers, David A. Randall, et al.. (1989). Effects of Implementing the Simple Biosphere Model in a General Circulation Model. Journal of the Atmospheric Sciences. 46(18). 2757–2782. 227 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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