G. Holmén

1.1k total citations
46 papers, 872 citations indexed

About

G. Holmén is a scholar working on Computational Mechanics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, G. Holmén has authored 46 papers receiving a total of 872 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Computational Mechanics, 33 papers in Electrical and Electronic Engineering and 13 papers in Materials Chemistry. Recurrent topics in G. Holmén's work include Ion-surface interactions and analysis (32 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers) and Silicon and Solar Cell Technologies (16 papers). G. Holmén is often cited by papers focused on Ion-surface interactions and analysis (32 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers) and Silicon and Solar Cell Technologies (16 papers). G. Holmén collaborates with scholars based in Sweden, Denmark and Hungary. G. Holmén's co-authors include B. G. Svensson, Jan Linnros, A. L. Van Buren, H. Jacobsson, Peter Högberg, Jørgen Schou, Peter Sigmund, Prayoon Songsiriritthigul, E. Kugler and O. Almén and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

G. Holmén

45 papers receiving 814 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Holmén Sweden 17 697 621 199 192 115 46 872
G. Lulli Italy 16 502 0.7× 643 1.0× 284 1.4× 103 0.5× 141 1.2× 72 962
E. Bøgh Denmark 10 306 0.4× 214 0.3× 179 0.9× 85 0.4× 151 1.3× 12 563
T. Neidhart Austria 8 295 0.4× 140 0.2× 129 0.6× 109 0.6× 78 0.7× 9 404
A. Oliva-Florio Argentina 8 391 0.6× 240 0.4× 129 0.6× 238 1.2× 123 1.1× 8 565
G. S. Anderson United States 14 305 0.4× 218 0.4× 191 1.0× 48 0.3× 37 0.3× 17 545
Eizo Miyauchi Japan 17 300 0.4× 645 1.0× 141 0.7× 168 0.9× 28 0.2× 66 784
H.D. Mieskes Germany 11 359 0.5× 244 0.4× 161 0.8× 35 0.2× 70 0.6× 15 408
Klaus Heidemann Germany 15 201 0.3× 344 0.6× 113 0.6× 120 0.6× 109 0.9× 33 564
C. Cardinal Canada 9 214 0.3× 106 0.2× 154 0.8× 64 0.3× 219 1.9× 16 567
Claude Montcalm United States 14 113 0.2× 266 0.4× 83 0.4× 178 0.9× 208 1.8× 37 557

Countries citing papers authored by G. Holmén

Since Specialization
Citations

This map shows the geographic impact of G. Holmén's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Holmén with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Holmén more than expected).

Fields of papers citing papers by G. Holmén

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Holmén. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Holmén. The network helps show where G. Holmén may publish in the future.

Co-authorship network of co-authors of G. Holmén

This figure shows the co-authorship network connecting the top 25 collaborators of G. Holmén. A scholar is included among the top collaborators of G. Holmén based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Holmén. G. Holmén is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Songsiriritthigul, Prayoon & G. Holmén. (1997). Strain induced defects in Si1−xGex-alloy layers formed by solid phase epitaxial growth of 40 keV Ge+ ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 124(1). 55–62. 3 indexed citations
2.
Songsiriritthigul, Prayoon, G. Holmén, & Eva Olsson. (1997). Strained SiGe-alloy layers formed by solid phase epitaxial growth of Ge+ ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 122(4). 630–634. 10 indexed citations
3.
Ilver, L., J. Kanski, P. O. Nilsson, et al.. (1996). Band structure evolution in InAs overlayers on GaAs(110). Applied Surface Science. 104-105. 608–614. 4 indexed citations
4.
Songsiriritthigul, Prayoon & G. Holmén. (1996). Thermal solid phase epitaxial growth and ion-beam induced crystallisation of Ge+ ion implanted layers in silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 120(1-4). 207–211. 5 indexed citations
5.
Jacobsson, H. & G. Holmén. (1994). Collisional versus electronic sputtering of SiO2. Journal of Applied Physics. 75(12). 8109–8113. 3 indexed citations
6.
Jacobsson, H. & G. Holmén. (1993). The sputtering of SiO2 and its dependence on oxygen partial pressure. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 82(2). 291–300. 11 indexed citations
7.
Holmén, G., et al.. (1992). Ion-implanted buried nitride layers in silicon. Materials Science and Engineering B. 12(1-2). 161–164. 3 indexed citations
8.
Karlsteen, M., Q. Wahab, M. Willander, J.‐E. Sundgren, & G. Holmén. (1992). Characterisation of ion-implanted pn-junction diodes in β-SiC films grown on (100) silicon substrates by reactive magnetron sputtering. Diamond and Related Materials. 1(5-6). 486–488. 3 indexed citations
9.
Svensson, B. G., Jan Linnros, & G. Holmén. (1990). Boron implantation in silicon: Isotope effects studied by secondary ion mass spectrometry. Journal of Applied Physics. 68(1). 73–77. 12 indexed citations
10.
Holmén, G. & H. Jacobsson. (1988). Ion beam induced oxidation of silicon. Applied Physics Letters. 53(19). 1838–1840. 14 indexed citations
11.
Linnros, Jan & G. Holmén. (1987). Dose rate dependence and time constant of the ion-beam-induced crystallization mechanism in silicon. Journal of Applied Physics. 62(12). 4737–4744. 39 indexed citations
12.
Holmén, G., Jan Linnros, & B. G. Svensson. (1984). Influence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in silicon. Applied Physics Letters. 45(10). 1116–1118. 20 indexed citations
13.
Svensson, B. G. & G. Holmén. (1982). Electron emission from aluminum and copper under molecular-hydrogen-ion bombardment. Physical review. B, Condensed matter. 25(5). 3056–3062. 29 indexed citations
14.
Svensson, B. G. & G. Holmén. (1981). Electron emission from ion-bombarded aluminum. Journal of Applied Physics. 52(11). 6928–6933. 65 indexed citations
15.
Svensson, B. G., G. Holmén, & A. L. Van Buren. (1981). Angular dependence of the ion-induced secondary-electron yield from solids. Physical review. B, Condensed matter. 24(7). 3749–3755. 53 indexed citations
16.
Holmén, G., et al.. (1980). Ion Implanted Devices in Silicon on Sapphire. Physica Scripta. 22(3). 308–313.
17.
Holmén, G., Peter Högberg, & A. L. Van Buren. (1975). Radiation damage in ge produced by noble gas ions investigated by the secondary electron emission method. Radiation Effects. 24(1). 39–44. 18 indexed citations
18.
Holmén, G. & Peter Högberg. (1972). A study of the production and removal of radiation defects in Ge using secondary electron emission. Radiation Effects. 12(1-2). 77–85. 25 indexed citations
19.
Holmén, G., E. Kugler, & O. Almén. (1972). Ultra high vacuum system for ion-solid collision investigations connected to a conventional ion accelerator. Nuclear Instruments and Methods. 105(3). 545–550. 10 indexed citations
20.
Holmén, G., et al.. (1971). Nuclear Particle Detectors Made by Ion-implantation. Physica Scripta. 3(3-4). 101–102. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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