F. Sacconi

730 total citations
41 papers, 577 citations indexed

About

F. Sacconi is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, F. Sacconi has authored 41 papers receiving a total of 577 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 25 papers in Atomic and Molecular Physics, and Optics and 21 papers in Electrical and Electronic Engineering. Recurrent topics in F. Sacconi's work include GaN-based semiconductor devices and materials (25 papers), Semiconductor Quantum Structures and Devices (21 papers) and Semiconductor materials and devices (16 papers). F. Sacconi is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Semiconductor Quantum Structures and Devices (21 papers) and Semiconductor materials and devices (16 papers). F. Sacconi collaborates with scholars based in Italy, Germany and United States. F. Sacconi's co-authors include Aldo Di Carlo, Matthias Auf der Maur, Paolo Lugli, Alessandro Pecchia, Gabriele Penazzi, Michael Povolotskyi, M. Städele, H. Morkoç̌, Giuseppe Romano and Paolo Lugli and has published in prestigious journals such as Journal of Applied Physics, Physical Review B and IEEE Transactions on Electron Devices.

In The Last Decade

F. Sacconi

37 papers receiving 538 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Sacconi Italy 13 363 281 269 226 109 41 577
Zihao Yang United States 10 303 0.8× 271 1.0× 127 0.5× 333 1.5× 50 0.5× 17 598
M. V. Petrychuk Ukraine 13 346 1.0× 165 0.6× 197 0.7× 100 0.4× 177 1.6× 59 496
Hwayong Noh South Korea 17 333 0.9× 435 1.5× 228 0.8× 478 2.1× 82 0.8× 39 855
Daniele Barettin Italy 13 141 0.4× 214 0.8× 127 0.5× 150 0.7× 104 1.0× 40 369
F. Ernult Japan 11 152 0.4× 406 1.4× 129 0.5× 133 0.6× 50 0.5× 24 474
Wei‐Chou Hsu Taiwan 14 532 1.5× 203 0.7× 261 1.0× 107 0.5× 82 0.8× 96 619
Hongyu An Japan 11 278 0.8× 560 2.0× 138 0.5× 199 0.9× 38 0.3× 41 650
James G. Champlain United States 15 409 1.1× 226 0.8× 96 0.4× 263 1.2× 83 0.8× 44 524
H. Q. Ni China 16 468 1.3× 366 1.3× 80 0.3× 350 1.5× 95 0.9× 45 706
Fang-Yuh Lo Taiwan 16 266 0.7× 379 1.3× 200 0.7× 252 1.1× 29 0.3× 49 630

Countries citing papers authored by F. Sacconi

Since Specialization
Citations

This map shows the geographic impact of F. Sacconi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Sacconi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Sacconi more than expected).

Fields of papers citing papers by F. Sacconi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Sacconi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Sacconi. The network helps show where F. Sacconi may publish in the future.

Co-authorship network of co-authors of F. Sacconi

This figure shows the co-authorship network connecting the top 25 collaborators of F. Sacconi. A scholar is included among the top collaborators of F. Sacconi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Sacconi. F. Sacconi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Seravalli, L. & F. Sacconi. (2020). Reviewing quantum dots for single-photon emission at 1.55 μm: a quantitative comparison of materials. Journal of Physics Materials. 3(4). 42005–42005. 7 indexed citations
2.
Tahraoui, Abbès, Lutz Geelhaar, F. Sacconi, et al.. (2017). Effect of Varying Three-Dimensional Strain on the Emission Properties of Light-Emitting Diodes Based on (In,Ga)N/GaN Nanowires. Physical Review Applied. 7(4). 4 indexed citations
3.
Seravalli, L., Mariangela Gioannini, Federica Cappelluti, et al.. (2016). Broadband light sources based on InAs/InGaAs metamorphic quantum dots. Journal of Applied Physics. 119(14). 15 indexed citations
4.
Maur, Matthias Auf der, Daniele Barettin, Alessandro Pecchia, F. Sacconi, & Aldo Di Carlo. (2014). Effect of alloy fluctuations in InGaN/GaN quantum wells on optical emission strength. 13 indexed citations
5.
Maur, Matthias Auf der, Alessandro Pecchia, Gabriele Penazzi, F. Sacconi, & Aldo Di Carlo. (2013). Coupling atomistic and continuous media models for electronic device simulation. Journal of Computational Electronics. 12(4). 553–562. 11 indexed citations
6.
Hugues, Maxime, Philip A. Shields, F. Sacconi, et al.. (2013). Strain evolution in GaN nanowires: From free-surface objects to coalesced templates. Journal of Applied Physics. 114(8). 54 indexed citations
7.
Álvarez, Mariela L., et al.. (2013). Simulation of random alloy effects in InGaN/GaN LEDs. 4. 113–114. 1 indexed citations
8.
Sacconi, F., Matthias Auf der Maur, & Aldo Di Carlo. (2012). Optoelectronic Properties of Nanocolumn InGaN/GaN LEDs. IEEE Transactions on Electron Devices. 59(11). 2979–2987. 17 indexed citations
9.
Sacconi, F., et al.. (2012). Atomistic simulation of InGaN/GaN quantum disk LEDs. Optical and Quantum Electronics. 44(3-5). 89–94. 9 indexed citations
10.
Maur, Matthias Auf der, F. Sacconi, & Aldo Di Carlo. (2012). Influence of polar surface properties on InGaN/GaN core-shell nanorod LED properties. Optical and Quantum Electronics. 45(7). 617–622. 2 indexed citations
11.
Sacconi, F., et al.. (2012). Optoelectronic properties of nanocolumnar InGaN/GaN quantum disk LEDs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(5). 1315–1319.
12.
Maur, Matthias Auf der, F. Sacconi, & Aldo Di Carlo. (2012). A Parametric Study of InGaN/GaN Nanorod Core-Shell LEDs. IEEE Transactions on Electron Devices. 60(1). 171–177. 6 indexed citations
13.
Álvarez, Mariela L., F. Sacconi, Matthias Auf der Maur, Alessandro Pecchia, & Aldo Di Carlo. (2011). Atomistic simulation of InGaN/GaN quantum disk LEDs. 18. 195–196. 1 indexed citations
14.
Maur, Matthias Auf der, F. Sacconi, Gabriele Penazzi, et al.. (2010). Concurrent multiscale simulation of electronic devices. Journal of Computational Electronics. 9(3-4). 262–268. 4 indexed citations
15.
Vinattieri, A., E. Feltin, D. Simeonov, et al.. (2009). Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well. Physical Review B. 79(24). 6 indexed citations
16.
Maur, Matthias Auf der, Michael Povolotskyi, F. Sacconi, et al.. (2008). TiberCAD: Towards multiscale simulation of optoelectronic devices. 43–44. 2 indexed citations
17.
Sacconi, F., Jean‐Marc Jancu, Michael Povolotskyi, & Aldo Di Carlo. (2007). Full-band tunneling in high-κ dielectric MOS structures. Microelectronics Reliability. 47(4-5). 694–696. 2 indexed citations
18.
Sacconi, F., Martin Persson, Michael Povolotskyi, et al.. (2007). Electronic and transport properties of silicon nanowires. Journal of Computational Electronics. 6(1-3). 329–333. 31 indexed citations
19.
Maur, Matthias Auf der, Michael Povolotskyi, F. Sacconi, & Aldo Di Carlo. (2006). Simulation of piezoresistivity effect in FETs. Journal of Computational Electronics. 5(4). 323–326. 1 indexed citations
20.
Sacconi, F., et al.. (2001). Quasi Two-Dimensional Modeling of GaN-Based MODFETs. physica status solidi (a). 188(1). 251–254. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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