E. Lusky

539 total citations
15 papers, 437 citations indexed

About

E. Lusky is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, E. Lusky has authored 15 papers receiving a total of 437 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 1 paper in Computer Networks and Communications. Recurrent topics in E. Lusky's work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Electronic and Structural Properties of Oxides (7 papers). E. Lusky is often cited by papers focused on Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Electronic and Structural Properties of Oxides (7 papers). E. Lusky collaborates with scholars based in Israel, Italy and Germany. E. Lusky's co-authors include I. Bloom, B. Eitan, Yosi Shacham‐Diamand, Guy Cohen, M. Janai, Paolo Pavan, G. Verzellesi, Luca Larcher, David H. Levy and S. Riedel and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

E. Lusky

15 papers receiving 380 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Lusky Israel	11	434	142	24	24	8	15	437
D. Finzi Israel	4	473 1.1×	147 1.0×	40 1.7×	39 1.6×	14 1.8×	5	480
Efraim Aloni Israel	5	487 1.1×	146 1.0×	42 1.8×	22 0.9×	14 1.8×	7	494
N. K. Zous Taiwan	10	394 0.9×	87 0.6×	48 2.0×	16 0.7×	9 1.1×	37	400
T. Melde Germany	8	342 0.8×	192 1.4×	18 0.8×	6 0.3×	7 0.9×	20	354
D.E. Brown Australia	6	233 0.5×	101 0.7×	11 0.5×	7 0.3×	18 2.3×	15	252
N. Arai Japan	9	230 0.5×	45 0.3×	42 1.8×	12 0.5×	12 1.5×	28	242
A. Acovic United States	11	402 0.9×	41 0.3×	12 0.5×	45 1.9×	31 3.9×	35	411
Sankar Sarkar India	13	324 0.7×	166 1.2×	14 0.6×	13 0.5×	46 5.8×	19	349
J. Ku Taiwan	10	304 0.7×	67 0.5×	57 2.4×	33 1.4×	24 3.0×	26	315
Marc Bourcerie France	10	458 1.1×	34 0.2×	10 0.4×	13 0.5×	3 0.4×	16	480

Countries citing papers authored by E. Lusky

Since Specialization

Citations

This map shows the geographic impact of E. Lusky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Lusky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Lusky more than expected).

Fields of papers citing papers by E. Lusky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Lusky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Lusky. The network helps show where E. Lusky may publish in the future.

Co-authorship network of co-authors of E. Lusky

This figure shows the co-authorship network connecting the top 25 collaborators of E. Lusky. A scholar is included among the top collaborators of E. Lusky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Lusky. E. Lusky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Lusky, E., et al.. (2006). NROM Window Sensing for 2 and 4-bits per cell Products. 68–69. 2 indexed citations

Eitan, B., et al.. (2006). 4-bit per cell NROM reliability. 539–542. 28 indexed citations

Levy, David H., et al.. (2004). Spatial characterization of localized charge trapping and charge redistribution in the NROM device. Solid-State Electronics. 48(9). 1489–1495. 24 indexed citations

Lusky, E., et al.. (2004). Retention loss characteristics of localized charge-trapping devices. 527–530. 8 indexed citations

Lusky, E., et al.. (2004). Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device. Applied Physics Letters. 85(4). 669–671. 26 indexed citations

Shacham‐Diamand, Yosi, et al.. (2004). Lateral charge transport in the nitride layer of the NROM non-volatile memory device. Microelectronic Engineering. 72(1-4). 426–433. 22 indexed citations

Ludwig, C., Ch. Kleint, S. Riedel, et al.. (2004). 110nm NROM technology for code and data flash products. 556. 76–77. 6 indexed citations

Lusky, E., et al.. (2004). The Two-Bit NROM Reliability. IEEE Transactions on Device and Materials Reliability. 4(3). 397–403. 30 indexed citations

Lusky, E., et al.. (2004). Investigation of Channel Hot Electron Injection by Localized Charge-Trapping Nonvolatile Memory Devices. IEEE Transactions on Electron Devices. 51(3). 444–451. 45 indexed citations

10.

Janai, M., et al.. (2004). Data retention reliability model of NROM nonvolatile memory products. IEEE Transactions on Device and Materials Reliability. 4(3). 404–415. 53 indexed citations

11.

Shacham‐Diamand, Yosi, et al.. (2003). Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices. Solid-State Electronics. 47(5). 937–941. 21 indexed citations

12.

Lusky, E., Yosi Shacham‐Diamand, I. Bloom, & B. Eitan. (2002). Electrons retention model for localized charge in oxide-nitride-oxide (ONO) dielectric. IEEE Electron Device Letters. 23(9). 556–558. 60 indexed citations

13.

Larcher, Luca, G. Verzellesi, Paolo Pavan, et al.. (2002). Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells. IEEE Transactions on Electron Devices. 49(11). 1939–1946. 46 indexed citations

14.

Lusky, E., et al.. (2001). Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM TM Non-Volatile Semiconductor Memory Devices. 3 indexed citations

15.

Lusky, E., Yosi Shacham‐Diamand, I. Bloom, & B. Eitan. (2001). Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device. IEEE Electron Device Letters. 22(11). 556–558. 63 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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