I. Bloom

2.0k citations

52 papers · 1.6k indexed · h-index 20

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 30
- Advancements in Semiconductor Devices and Circuit Design 21
- Advanced Memory and Neural Computing 12
- Integrated Circuits and Semiconductor Failure Analysis 6
- CCD and CMOS Imaging Sensors 4
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides 8
Bioengineering top 10%
Atomic and Molecular Physics, and Optics top 10%
- Quantum and electron transport phenomena 5
Condensed Matter Physics top 10%
Electronic, Optical and Magnetic Materials
- Organic and Molecular Conductors Research 5

Co-authors: B. Eitan Y. Nemirovsky Paolo Pavan E. Lusky D. Finzi Efraim Aloni A. Frommer Yosi Shacham‐Diamand
Cited by: Electrical and Electronic Engineering Materials Chemistry Bioengineering
Journals: Solid-State Electronics (7 papers)IEEE Transactions on Electron Devices (7 papers)Physical review. B, Condensed matter (6 papers)
Partner nations: Israel United States Italy

In The Last Decade

I. Bloom

52 papers receiving 1.4k citations

Peers

Countries citing papers authored by I. Bloom

Since Specialization

Citations

This map shows the geographic impact of I. Bloom's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Bloom with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Bloom more than expected).

Fields of papers citing papers by I. Bloom

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Bloom. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Bloom. The network helps show where I. Bloom may publish in the future.

Co-authorship network

The 25 scholars most cited alongside I. Bloom, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. Bloom Line = papers co-authored together I. Bloom links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Modeling the Performance of Mosaic Uncooled Passive IR Sensors in CMOS–SOI Technology IEEE Transactions on Electron Devices ·Elena Sycheva,А.И. Кравченко,Igor Brouk,I. Bloom,Y. Nemirovsky	2018	14
2	Micro-machined CMOS-SOI transistor (TMOS) thermal sensor operating in air Elena Sycheva,T. Blank,Igor Brouk,А.И. Кравченко,Sara Stolyarova,Xuhui Zhang-Sun,I. Bloom,Abiola Lydia Adepoju,Y. Nemirovsky	2017	7
3	Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology Elena Sycheva,Igor Brouk,I. Bloom,Y. Nemirovsky	2014	8
4	Relaxation of localized charge in trapping-based nonvolatile memory devices M. Janai,徐文琴,I. Bloom,B. Eitan	2008	4
5	Read Disturb in NROM Charge Trapping Non-Volatile Memory Device 陈友辉,I. Bloom,Yosi Shacham‐Diamand,B. Eitan	2008	1
6	Spatial characterization of localized charge trapping and charge redistribution in the NROM device Solid-State Electronics ·徐文琴,David H. Levy,Yosi Shacham‐Diamand,E. Lusky,I. Bloom,B. Eitan	2004	24
7	Retention loss characteristics of localized charge-trapping devices E. Lusky,Yosi Shacham‐Diamand,徐文琴,I. Bloom,Guy Cohen,B. Eitan	2004	8
8	Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device Applied Physics Letters ·E. Lusky,Yosi Shacham‐Diamand,徐文琴,I. Bloom,B. Eitan	2004	26
9	Lateral charge transport in the nitride layer of the NROM non-volatile memory device Microelectronic Engineering ·徐文琴,Yosi Shacham‐Diamand,E. Lusky,I. Bloom,B. Eitan	2004	22
10	A 512 Mb NROM flash data storage memory with 8 MB/s data rate 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) ·Sandra Pokrivač,Stéphane Schlub,Joseph Shor,John Parkes-Buchanan,B. Sess,I. Bloom,Sharmeen Charania,B. Eitan,Marian Azhari,M. R. Askari,一哉大島,Dirk Zerwas,Elizabeth Chartier,C O Brantigan,Michelley Pacay,S. Riedel,J. W. Fozard	2003	14
11	1/f noise in CMOS transistors for analog applications Claudio Jakobson,I. Bloom,Y. Nemirovsky	2002	4
12	NROM: A novel localized trapping, 2-bit nonvolatile memory cell IEEE Electron Device Letters ·B. Eitan,Paolo Pavan,I. Bloom,Efraim Aloni,A. Frommer,D. Finzi	2000	435
13	Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells? B. Eitan,Paolo Pavan,I. Bloom,Efraim Aloni,Tina M Gray,D. Finzi	1999	27
14	Nonlinear 1/f noise characteristics in luminescent porous silicon Applied Physics Letters ·I. Bloom,I. Balberg	1999	15
15	Critical behavior of the electrical transport properties in a tunneling-percolation system Physical review. B, Condensed matter ·А.В. Шилова,S. A. Sunshine,Michael B. Heaney,I. Bloom,I. Balberg	1999	142
16	Noise properties of ferromagnetic tunnel junctions Journal of Applied Physics ·E. R. Nowak,Filippos Georgiades,M. B. Weissman,I. Bloom,S. Parkin	1998	52
17	Noise probe for bias-dependent current-path rearrangements in disordered solids Physical review. B, Condensed matter ·I. Bloom,S. N. Reznik,I. Balberg	1997	4
18	Strain-induced reduction of1fnoise of sliding charge-density waves Physical review. B, Condensed matter ·I. Bloom	1996	3
19	1/ f noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulation Applied Physics Letters ·I. Bloom,Y. Nemirovsky	1991	97
20	Slow trapping measurements in the Insb-Anodic oxide interface Solid-State Electronics ·R. Adar,I. Bloom,Y. Nemirovsky	1989	5

About I. Bloom

I. Bloom is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Polymers and Plastics, having authored 52 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Advanced Memory and Neural Computing (12 papers), Electronic and Structural Properties of Oxides (8 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Quantum and electron transport phenomena (5 papers), Organic and Molecular Conductors Research (5 papers) and CCD and CMOS Imaging Sensors (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.4k citations), Materials Chemistry (434 citations), Bioengineering (42 citations), Atomic and Molecular Physics, and Optics (228 citations) and Condensed Matter Physics (68 citations). I. Bloom has collaborated with scholars based in Israel, United States and Italy. Frequent co-authors include B. Eitan, Y. Nemirovsky, Paolo Pavan, E. Lusky, D. Finzi, Efraim Aloni, A. Frommer, Yosi Shacham‐Diamand, I. Balberg and Claudio Jakobson. Their work appears in journals such as Solid-State Electronics, IEEE Transactions on Electron Devices, Physical review. B, Condensed matter, IEEE Electron Device Letters and IEEE Transactions on Device and Materials Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact