I. Bloom

2.0k citations

56 papers · 1.7k · h-index 20

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Advanced MEMS and NEMS Technologies
- Radio Frequency Integrated Circuit Design
- Radiation Effects in Electronics
Electronic, Optical and Magnetic Materials
- Organic and Molecular Conductors Research

Papers in

Electrical and Electronic Engineering 36
- Semiconductor materials and devices 30
- Advanced Semiconductor Detectors and Materials 5
- Advanced MEMS and NEMS Technologies 1
Electronic, Optical and Magnetic Materials 5
- Organic and Molecular Conductors Research 4
- Copper Interconnects and Reliability 1

Co-authors: Boaz Eitan (24 shared papers)Yael Nemirovsky (16 shared papers)Paolo Pavan (7 shared papers)Eli Lusky (14 shared papers)David Finzi (2 shared papers)Efraim Aloni (2 shared papers)A. Frommer (1 shared paper)Yosi Shacham‐Diamand (9 shared papers)
Journals: Solid-State Electronics (7 papers)IEEE Transactions on Electron Devices (7 papers)IEEE Electron Device Letters (4 papers)Applied Physics Letters (3 papers)IEEE Transactions on Device and Materials Reliability (3 papers)
Partner nations: Israel United States Italy

In The Last Decade

I. Bloom

56 papers receiving 1.5k citations

Peers

Countries citing papers authored by I. Bloom

Since Specialization

Citations

This map shows the geographic impact of I. Bloom's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Bloom with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Bloom more than expected).

Fields of papers citing papers by I. Bloom

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Bloom. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Bloom. The network helps show where I. Bloom may publish in the future.

Co-authors

The 25 scholars most cited alongside I. Bloom, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. Bloom Line = papers co-authored together I. Bloom links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 56 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	NROM: A novel localized trapping, 2-bit nonvolatile memory cell IEEE Electron Device Letters ·Boaz Eitan, Paolo Pavan, I. Bloom, Efraim Aloni, A. Frommer, David Finzi	2000	459
2	Critical behavior of the electrical transport properties in a tunneling-percolation system Physical review. B, Condensed matter ·Z. Rubin, Steven A. Sunshine, Michael B. Heaney, I. Bloom, Isaac Balberg	1999	153
3	1/ f noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulation Applied Physics Letters ·I. Bloom, Yael Nemirovsky	1991	105
4	1/f Noise in CMOS transistors for analog applications from subthreshold to saturation Solid-State Electronics ·Claudio G. Jakobson, I. Bloom, Yael Nemirovsky	1998	84
5	Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device IEEE Electron Device Letters ·Eli Lusky, Yosi Shacham‐Diamand, I. Bloom, Boaz Eitan	2001	63
6	Electrons retention model for localized charge in oxide-nitride-oxide (ONO) dielectric IEEE Electron Device Letters ·Eli Lusky, Yosi Shacham‐Diamand, I. Bloom, Boaz Eitan	2002	61
7	Data retention reliability model of NROM nonvolatile memory products IEEE Transactions on Device and Materials Reliability ·Meir Janai, Boaz Eitan, Assaf Shappir, Eli Lusky, I. Bloom +1 other	2004	57
8	Noise properties of ferromagnetic tunnel junctions Journal of Applied Physics ·Edmund R. Nowak, R. D. Merithew, Michael B. Weissman, I. Bloom, S. Parkin	1998	55
9	Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells IEEE Transactions on Electron Devices ·Luca Larcher, G. Verzellesi, Paolo Pavan, Eli Lusky, I. Bloom, Boaz Eitan	2002	46
10	Investigation of Channel Hot Electron Injection by Localized Charge-Trapping Nonvolatile Memory Devices IEEE Transactions on Electron Devices ·Eli Lusky, Yosi Shacham‐Diamand, G. Mitenberg, Assaf Shappir, I. Bloom, Boaz Eitan	2004	45
11	The Two-Bit NROM Reliability IEEE Transactions on Device and Materials Reliability ·Assaf Shappir, Eli Lusky, I. Bloom, Meir Janai, Boaz Eitan +1 other	2004	32
12	Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device Applied Physics Letters ·Eli Lusky, Yosi Shacham‐Diamand, Assaf Shappir, I. Bloom, Boaz Eitan	2004	29
13	Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells? International Conference on Solid State Devices and Materials (SSDM) ·Boaz Eitan, Paolo Pavan, I. Bloom, Efraim Aloni, Aviv Frommer, David Finzi	1999	28
14	4-bit per cell NROM reliability Boaz Eitan, Assaf Shappir, Eli Lusky, Amichai Givant, Meir Janai, I. Bloom, Yan Polansky, O. Dadashev	2006	28
15	Modeling the Performance of Nano Machined CMOS Transistors for Uncooled IR Sensing IEEE Transactions on Electron Devices ·Alex Zviagintsev, Tania Blank, Igor Brouk, I. Bloom, Yael Nemirovsky	2017	27
16	Surface passivation of backside-illuminated indium antimonide focal plane array IEEE Transactions on Electron Devices ·I. Bloom, Yael Nemirovsky	1993	25
17	Spatial characterization of localized charge trapping and charge redistribution in the NROM device Solid-State Electronics ·Assaf Shappir, Yosi Shacham‐Diamand, Eli Lusky, I. Bloom, Boaz Eitan +1 other	2004	24
18	Lateral charge transport in the nitride layer of the NROM non-volatile memory device Microelectronic Engineering ·Assaf Shappir, Yosi Shacham‐Diamand, Eli Lusky, I. Bloom, Boaz Eitan	2004	23
19	Nonequilibrium dynamics of discrete fluctuators in charge-density waves in NbSe3 Physical Review Letters ·I. Bloom, A. C. Marley, Michael B. Weissman	1993	22
20	Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices Solid-State Electronics ·Assaf Shappir, Yosi Shacham‐Diamand, Eli Lusky, I. Bloom, Boaz Eitan	2003	21

About I. Bloom

I. Bloom is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Computer Networks and Communications and Atomic and Molecular Physics, and Optics, having authored 56 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (30 papers), Advanced Semiconductor Detectors and Materials (5 papers), Organic and Molecular Conductors Research (4 papers), Copper Interconnects and Reliability (1 paper), Magnetic properties of thin films (1 paper), Silicon Nanostructures and Photoluminescence (1 paper), Advanced Data Storage Technologies (1 paper) and Advanced MEMS and NEMS Technologies (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Electronic, Optical and Magnetic Materials (42 citations), Condensed Matter Physics (28 citations), Bioengineering (4 citations) and Atomic and Molecular Physics, and Optics (51 citations). I. Bloom has collaborated with scholars based in Israel, United States and Italy. Frequent co-authors include Boaz Eitan, Yael Nemirovsky, Paolo Pavan, Eli Lusky, David Finzi, Efraim Aloni, A. Frommer, Yosi Shacham‐Diamand, Isaac Balberg and Michael B. Weissman. Their work appears in journals such as Solid-State Electronics, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters and IEEE Transactions on Device and Materials Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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I. Bloom

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