Marc Bourcerie

641 total citations
16 papers, 480 citations indexed

About

Marc Bourcerie is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, Marc Bourcerie has authored 16 papers receiving a total of 480 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 3 papers in Materials Chemistry and 2 papers in Computer Networks and Communications. Recurrent topics in Marc Bourcerie's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Advanced Memory and Neural Computing (5 papers). Marc Bourcerie is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Advanced Memory and Neural Computing (5 papers). Marc Bourcerie collaborates with scholars based in France, United States and Belgium. Marc Bourcerie's co-authors include A. Boudou, J.-C. Marchetaux, Barry M. Doyle, B.S. Doyle, K. Mistry, D. Vuillaume, François Chapeau‐Blondeau, J. Soret and Cristina Morel and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Marc Bourcerie

13 papers receiving 455 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Marc Bourcerie France	10	458	34	16	13	10	16	480
Ryan Sporer Germany	6	249 0.5×	95 2.8×	35 2.2×	5 0.4×	25 2.5×	16	293
Olof Sahlén Sweden	10	210 0.5×	9 0.3×	7 0.4×	116 8.9×	7 0.7×	31	225
Hidenori Taga Taiwan	9	290 0.6×	6 0.2×	8 0.5×	53 4.1×	4 0.4×	45	304
E.G. Ioannidis France	13	376 0.8×	17 0.5×	4 0.3×	22 1.7×	4 0.4×	29	381
W.-K. Shih United States	10	316 0.7×	26 0.8×	2 0.1×	76 5.8×	9 0.9×	19	331
Philipp Hehenberger Austria	4	423 0.9×	36 1.1×		19 1.5×	7 0.7×	6	431
K. Joardar United States	9	391 0.9×	18 0.5×	2 0.1×	32 2.5×	5 0.5×	20	399
Y. Higashi Japan	10	246 0.5×	100 2.9×	3 0.2×	4 0.3×	4 0.4×	26	257
N. Revil France	10	413 0.9×	36 1.1×		24 1.8×	4 0.4×	47	418
María Toledano Luque Belgium	4	407 0.9×	35 1.0×		17 1.3×	7 0.7×	8	413

Countries citing papers authored by Marc Bourcerie

Since Specialization

Citations

This map shows the geographic impact of Marc Bourcerie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Marc Bourcerie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Marc Bourcerie more than expected).

Fields of papers citing papers by Marc Bourcerie

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Marc Bourcerie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Marc Bourcerie. The network helps show where Marc Bourcerie may publish in the future.

Co-authorship network of co-authors of Marc Bourcerie

This figure shows the co-authorship network connecting the top 25 collaborators of Marc Bourcerie. A scholar is included among the top collaborators of Marc Bourcerie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Marc Bourcerie. Marc Bourcerie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Morel, Cristina, Marc Bourcerie, & François Chapeau‐Blondeau. (2005). Generating independent chaotic attractors by chaos anticontrol in nonlinear circuits. Chaos Solitons & Fractals. 26(2). 541–549. 11 indexed citations

Morel, Cristina, Marc Bourcerie, & François Chapeau‐Blondeau. (2005). IMPROVEMENT OF POWER SUPPLY ELECTROMAGNETIC COMPATIBILITY BY EXTENSION OF CHAOS ANTICONTROL. Journal of Circuits Systems and Computers. 14(4). 757–770. 9 indexed citations

Bourcerie, Marc, et al.. (2004). Research strategy as the main catalyst for organizational development. 44. 131–135. 1 indexed citations

Bourcerie, Marc, et al.. (2000). Modeling Dynamic Complex Systems: Application to an Electroplating Line. IFAC Proceedings Volumes. 33(17). 59–64.

Bourcerie, Marc, et al.. (1997). Algebraically structured colored Petri nets to model sequential processes. IEEE Transactions on Systems Man and Cybernetics Part B (Cybernetics). 27(4). 681–686. 2 indexed citations

Bourcerie, Marc, B.S. Doyle, J.-C. Marchetaux, J. Soret, & A. Boudou. (1990). Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxide. IEEE Transactions on Electron Devices. 37(3). 708–717. 34 indexed citations

Marchetaux, J.-C., Marc Bourcerie, A. Boudou, & D. Vuillaume. (1990). Application of the floating-gate technique to the study of the n-MOSFET gate current evolution due to hot-carrier aging. IEEE Electron Device Letters. 11(9). 406–408. 23 indexed citations

Doyle, Barry M., Marc Bourcerie, J.-C. Marchetaux, & A. Boudou. (1990). Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2<or=V/sub g/>or=V/sub d/) during hot-carrier stressing of n-MOS transistors. IEEE Transactions on Electron Devices. 37(3). 744–754. 188 indexed citations

Doyle, B.S., et al.. (1990). The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors. IEEE Transactions on Electron Devices. 37(8). 1869–1876. 139 indexed citations

10.

Bourcerie, Marc, et al.. (1989). Hot-carrier stressing damage in wide and narrow LDD NMOS transistors. IEEE Electron Device Letters. 10(3). 132–134. 12 indexed citations

11.

Doyle, B.S., J.-C. Marchetaux, Marc Bourcerie, & A. Boudou. (1989). The effect of substrate bias on hot-carrier damage in NMOS devices. IEEE Electron Device Letters. 10(1). 11–13. 8 indexed citations

12.

Bourcerie, Marc, J.-C. Marchetaux, A. Boudou, & D. Vuillaume. (1989). Optical spectroscopy and field-enhanced emission of an oxide trap induced by hot-hole injection in a silicon metal-oxide-semiconductor field-effect transistor. Applied Physics Letters. 55(21). 2193–2195. 13 indexed citations

13.

Doyle, B.S., Marc Bourcerie, J.-C. Marchetaux, & A. Boudou. (1987). The Voltage Dependence of Degradation in n-MOS Transistors. European Solid-State Device Research Conference. 155–158. 7 indexed citations

14.

Doyle, B.S., Marc Bourcerie, J.-C. Marchetaux, & A. Boudou. (1987). Dynamic channel hot-carrier degradation of NMOS transistors by enhanced electron-hole injection into the oxide. IEEE Electron Device Letters. 8(5). 237–239. 20 indexed citations

15.

Doyle, B.S., Marc Bourcerie, J.-C. Marchetaux, & A. Boudou. (1987). Relaxation effects in NMOS transistors after hot-carrier stressing. IEEE Electron Device Letters. 8(5). 234–236. 13 indexed citations

16.

Doyle, B.S., et al.. (1987). Hot electron degradation in the source of asymmetrical LDD structures. Electronics Letters. 23(25). 1356–1357.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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