J. Ku

473 citations

26 papers · 315 indexed · h-index 10

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Electromagnetic Compatibility and Noise Suppression
Computer Networks and Communications
- Advanced Data Storage Technologies

Papers in ⓘ

Electrical and Electronic Engineering 23
- Semiconductor materials and devices 18
- Advancements in Semiconductor Devices and Circuit Design 13
- Advanced Memory and Neural Computing 7
- Integrated Circuits and Semiconductor Failure Analysis 5
- Electromagnetic Compatibility and Noise Suppression 3
- Low-power high-performance VLSI design 2
Numerical Analysis 1

Co-authors: Erh-Kun Lai (6 shared papers)Ling-Wu Yang (4 shared papers)Szu-Yu Wang (4 shared papers)Hang-Ting Lue (4 shared papers)Chih‐Yuan Lu (6 shared papers)Kuang-Yeu Hsieh (3 shared papers)Kuang‐Chao Chen (6 shared papers)R. Liu (2 shared papers)
Journals: IEEE Electron Device Letters (5 papers)IEEE Transactions on Electromagnetic Compatibility (2 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2 papers)Solid-State Electronics (1 paper)IMA Journal of Numerical Analysis (1 paper)
Partner nations: Taiwan United States

In The Last Decade

J. Ku

24 papers receiving 297 citations

Peers

Countries citing papers authored by J. Ku

Since Specialization

Citations

This map shows the geographic impact of J. Ku's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Ku with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Ku more than expected).

Fields of papers citing papers by J. Ku

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Ku. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Ku. The network helps show where J. Ku may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Ku, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Ku Line = papers co-authored together J. Ku links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 26 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability Hang-Ting Lue, Szu-Yu Wang, Erh-Kun Lai, Yen-Hao Shih, Sheng-Chih Lai, Ling-Wu Yang, Kuang‐Chao Chen, J. Ku, Kuang-Yeu Hsieh, R. Liu, Chih‐Yuan Lu	2006	108
2	LPE and VPE In<inf>1-x</inf>Ga<inf>x</inf>As<inf>y</inf>P<inf>1-y</inf>/InP: Transport properties, defects, and device considerations IEEE Journal of Quantum Electronics ·P. Bhattacharya, J. Ku, S. J. T. Owen, Gregory L. Olsen, S. H. Chiao	1981	28
3	Signal/Power Integrity Modeling of High-Speed Memory Modules Using Chip-Package-Board Coanalysis IEEE Transactions on Electromagnetic Compatibility ·Hao-Hsiang Chuang, Wei-Da Guo, Yu-Hsiang Lin, Hsin‐Shu Chen, Yi-Chang Lu, Yung-Shou Cheng, Ming-Zhang Hong, Chun-Huang Yu, Wen-Chang Cheng, Yen-Ping Chou, Chuan-Jen Chang, J. Ku, Tzong‐Lin Wu, Ruey‐Beei Wu	2010	28
4	A Highly Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory Erh-Kun Lai, Hang-Ting Lue, Yi‐Hsuan Hsiao, Jian‐Yu Hsieh, Si‐Chen Lee, Chia-Hui Lu, S.-Y. Wang, Ling Yang, K.-C. Chen, Jiangdong Gong, K. Y. Hsieh, J. Ku, R. Liu, C.-Y. Lu	2006	22
5	A Novel Simple CBCM Method Free From Charge Injection-Induced Errors IEEE Electron Device Letters ·Yao‐Wen Chang, Hsuan‐Chun Chang, C.H. Hsieh, H.C. Lai, Tsung‐Chien Lu, W. Ting, J. Ku, C.-Y. Lu	2004	21
6	Lateral Migration of Trapped Holes in a Nitride Storage Flash Memory Cell and Its Qualification Methodology IEEE Electron Device Letters ·N. K. Zous, M.Y. Lee, Wen-Jer Tsai, Albert Kuo, L.T. Huang, Tsung‐Chien Lu, C.J. Liu, T. Wang, Wei Lü, W. Ting, J. Ku, C.-Y. Lu	2004	14
7	A novel p-channel NAND-type flash memory with 2-bit/cell operation and high programming throughput (<20 MB/sec) Hang-Ting Lue, Szu-Yu Wang, Erh-Kun Lai, Min-Ta Wu, Ling-Wu Yang, Kuang-Chao Chen, J. Ku, Kuang-Yeu Hsieh, R. Liu, Chih-Yuan Lu	2006	14
8	Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory S.H. Gu, C.W. Li, Tahui Wang, Wei Lü, K.C. Chen, J. Ku, Chih‐Yuan Lu	2006	12
9	A novel CBCM method free from charge injection induced errors: investigation into the impact of floating dummy-fills on interconnect capacitance Yao-Wen Chang, Hung‐Wei Chang, Tsung‐Chien Lu, Ya‐Chin King, W. Ting, J. Ku, C.-Y. Lu	2005	9
10	Temperature Effect on Read Current in a Two-Bit Nitride-Based Trapping Storage Flash EEPROM Cell IEEE Electron Device Letters ·M.-Y. Liu, Yao‐Wen Chang, N. K. Zous, I. Yang, Tsung‐Chien Lu, T. Wang, W. Ting, J. Ku, C.-Y. Lu	2004	9
11	Mechanisms and solutions to gate oxide degradation in flash memory by tunnel-oxide nitridation engineering IEEE Electron Device Letters ·Szu-Yu Wang, C.Y. Chin, Pei-Ren Jeng, Ling-Wu Yang, Ming-Shiang Chen, Chi-Tung Huang, Jeng Gong, Kuang‐Chao Chen, J. Ku, Chih‐Yuan Lu	2005	7
12	Effect of fabrication process on the charge trapping behavior of SiON thin films Solid-State Electronics ·Szu-Yu Wang, Hang-Ting Lue, Erh-Kun Lai, Ling-Wu Yang, Jeng Gong, Kuang‐Chao Chen, Kuang-Yeu Hsieh, J. Ku, Chih-Yuan Lu	2006	6
13	Highly Scalable and Reliable Multi-bit/cell Nitride Trapping Nonvolatile Memory Using Enhanced ANS-ONO Process with A Nitridized Interface Yang‐Hsin Shih, Erh-Kun Lai, Jung-Yu Hsieh, T.H. Hsu, Ming-Tsung Wu, Chih-Yuan Lu, Kaikai Ni, Tung-Huan Chou, Lee‐Wei Yang, K. Y. Hsieh, Ming Liaw, Wei Lü, K.C. Chen, J. Ku, Ful-Long Ni, Rich Liu	2006	6
14	A Broadband Chip-Level Power-Bus Model Feasible for Power Integrity Chip-Package Codesign in High-Speed Memory Circuits IEEE Transactions on Electromagnetic Compatibility ·Hao-Hsiang Chuang, Chih-Jung Hsu, Jacky Hong, Chun-Huang Yu, Argy Cheng, J. Ku, Tzong‐Lin Wu	2009	5
15	A Novel Erase Scheme to Suppress Overerasure in a Scaled 2-Bit Nitride Storage Flash Memory Cell IEEE Electron Device Letters ·Chi‐Ju Yeh, T. Wang, Wen-Jer Tsai, Tien‐Chang Lu, Ying-Yu Liao, Haibin Chen, N. K. Zous, W. Ting, J. Ku, C.-Y. Lu	2004	5
16	Reliability and device scaling challenges of trapping charge flash memories Chi‐Ju Yeh, Wen-Jer Tsai, Tien‐Chang Lu, Yen‐Chen Liao, N. K. Zous, H.Y. Chen, Tahui Wang, Wenchi Ting, J. Ku, Chih‐Yuan Lu	2004	4
17	A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications Chi‐Ju Yeh, T. Wang, Yen‐Chen Liao, Wen-Jer Tsai, T.C. Lu, M.S. Chen, Y.R. Chen, Kuan‐Fu Chen, Zhaoxia Han, Michael S. Wong, Shu-Ya Hsu, N. K. Zous, T.F. Ou, W. Ting, J. Ku, C.-Y. Lu	2005	4
18	Investigation of Charge Loss in Cycled NBit Cells via Field and Temperature Accelerations Wen-Jer Tsai, N. K. Zous, Hao Chen, Lenvis Liu, Chi‐Ju Yeh, Sam Chen, Wei Lü, Tahui Wang, J. Ku, Chih‐Yuan Lu	2006	4
19	Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique S.H. Gu, M.T. Wang, Chun-Ru Chan, N. K. Zous, Chi‐Ju Yeh, Wen-Jer Tsai, Tien‐Chang Lu, Tahui Wang, J. Ku, Chih‐Yuan Lu	2004	2
20	A Novel Non-Volatile Memory Cell Using a Gated-Diode Structure with a Trapping-Nitride Storage Layer Wen-Jer Tsai, Tong Ou, Hsuan‐Ling Kao, Erh-Kun Lai, Yen‐Chen Liao, Chau‐Ting Yeh, T. Wang, J. Ku, C.-Y. Lu	2006	2

About J. Ku

J. Ku is a scholar working on Electrical and Electronic Engineering, Numerical Analysis, Computer Networks and Communications, Biophysics and Industrial and Manufacturing Engineering, having authored 26 papers that have together received 315 indexed citations. Recurring topics across this work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Advanced Memory and Neural Computing (7 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Electronic and Structural Properties of Oxides (4 papers), Advanced Data Storage Technologies (4 papers), Electromagnetic Compatibility and Noise Suppression (3 papers) and Low-power high-performance VLSI design (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (304 citations), Computer Networks and Communications (57 citations), Hardware and Architecture (16 citations), Materials Chemistry (67 citations) and Atomic and Molecular Physics, and Optics (33 citations). J. Ku has collaborated with scholars based in Taiwan and United States. Frequent co-authors include Erh-Kun Lai, Ling-Wu Yang, Szu-Yu Wang, Hang-Ting Lue, Chih‐Yuan Lu, Kuang-Yeu Hsieh, Kuang‐Chao Chen, R. Liu, Yen-Hao Shih and Sheng-Chih Lai. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electromagnetic Compatibility, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Solid-State Electronics and IMA Journal of Numerical Analysis.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact