J. Ku

473 total citations
26 papers, 315 citations indexed

About

J. Ku is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Materials Chemistry. According to data from OpenAlex, J. Ku has authored 26 papers receiving a total of 315 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 4 papers in Computer Networks and Communications and 4 papers in Materials Chemistry. Recurrent topics in J. Ku's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Advanced Memory and Neural Computing (7 papers). J. Ku is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Advanced Memory and Neural Computing (7 papers). J. Ku collaborates with scholars based in Taiwan and United States. J. Ku's co-authors include Erh-Kun Lai, Hang-Ting Lue, Ling-Wu Yang, Chih‐Yuan Lu, Szu-Yu Wang, Kuang-Yeu Hsieh, Kuang‐Chao Chen, R. Liu, Yen-Hao Shih and Sheng-Chih Lai and has published in prestigious journals such as IEEE Journal of Quantum Electronics, IEEE Electron Device Letters and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

In The Last Decade

J. Ku

24 papers receiving 297 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Ku Taiwan 10 304 67 57 33 24 26 315
H. Iizuka Japan 11 327 1.1× 42 0.6× 22 0.4× 58 1.8× 22 0.9× 27 343
S. Crowder United States 11 286 0.9× 27 0.4× 53 0.9× 76 2.3× 17 0.7× 19 344
Weiran Kong China 10 211 0.7× 37 0.6× 21 0.4× 24 0.7× 30 1.3× 30 239
N. K. Zous Taiwan 10 394 1.3× 87 1.3× 48 0.8× 16 0.5× 9 0.4× 37 400
D. Finzi Israel 4 473 1.6× 147 2.2× 40 0.7× 39 1.2× 14 0.6× 5 480
Ying-Dar Lin Taiwan 8 274 0.9× 93 1.4× 31 0.5× 33 1.0× 93 3.9× 15 329
H. Hazama Japan 10 302 1.0× 35 0.5× 26 0.5× 59 1.8× 23 1.0× 28 334
A. Chimenton Italy 11 335 1.1× 65 1.0× 115 2.0× 21 0.6× 14 0.6× 40 362
B. Kleveland United States 11 460 1.5× 22 0.3× 24 0.4× 35 1.1× 52 2.2× 24 480
S. Okhonin Switzerland 12 602 2.0× 52 0.8× 22 0.4× 51 1.5× 56 2.3× 29 632

Countries citing papers authored by J. Ku

Since Specialization
Citations

This map shows the geographic impact of J. Ku's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Ku with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Ku more than expected).

Fields of papers citing papers by J. Ku

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Ku. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Ku. The network helps show where J. Ku may publish in the future.

Co-authorship network of co-authors of J. Ku

This figure shows the co-authorship network connecting the top 25 collaborators of J. Ku. A scholar is included among the top collaborators of J. Ku based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Ku. J. Ku is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chuang, Hao-Hsiang, et al.. (2009). A Broadband Chip-Level Power-Bus Model Feasible for Power Integrity Chip-Package Codesign in High-Speed Memory Circuits. IEEE Transactions on Electromagnetic Compatibility. 52(1). 235–239. 5 indexed citations
2.
Ku, J.. (2009). Pointwise error estimate and asymptotic error expansion inequalities for a stabilized Galerkin method. IMA Journal of Numerical Analysis. 31(1). 165–187. 1 indexed citations
3.
Huang, Victor, et al.. (2006). Dual antireflection layers for ARC/hard-mask applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6154. 61543Q–61543Q. 1 indexed citations
4.
Lue, Hang-Ting, Szu-Yu Wang, Erh-Kun Lai, et al.. (2006). BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability. 547–550. 108 indexed citations
5.
Karig, David, J. Ku, & Ron Weiss. (2006). Engineering Multi-signal Systems for Complex Pattern Formation. 263–266. 1 indexed citations
6.
Wang, Szu-Yu, Hang-Ting Lue, Erh-Kun Lai, et al.. (2006). Effect of fabrication process on the charge trapping behavior of SiON thin films. Solid-State Electronics. 50(7-8). 1171–1174. 6 indexed citations
7.
Lai, Erh-Kun, Hang-Ting Lue, Yi‐Hsuan Hsiao, et al.. (2006). A Highly Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory. 46–47. 22 indexed citations
8.
Lue, Hang-Ting, Szu-Yu Wang, Erh-Kun Lai, et al.. (2006). A novel p-channel NAND-type flash memory with 2-bit/cell operation and high programming throughput (<20 MB/sec). 331–334. 14 indexed citations
9.
Tsai, Wen-Jer, N. K. Zous, Hao Chen, et al.. (2006). Investigation of Charge Loss in Cycled NBit Cells via Field and Temperature Accelerations. 693–694. 4 indexed citations
10.
11.
Liu, Hung‐Wei, et al.. (2005). Thermal stability enhancement of silicides by using N2 and Ar implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 213–216. 1 indexed citations
12.
Wang, Szu-Yu, Ling-Wu Yang, Jeng Gong, et al.. (2005). Mechanisms and solutions to gate oxide degradation in flash memory by tunnel-oxide nitridation engineering. IEEE Electron Device Letters. 26(6). 363–365. 7 indexed citations
13.
Chang, Hung‐Wei, Tsung‐Chien Lu, Ya‐Chin King, et al.. (2005). A novel CBCM method free from charge injection induced errors: investigation into the impact of floating dummy-fills on interconnect capacitance. 235–238. 9 indexed citations
14.
Chen, Kuang‐Chao, et al.. (2005). Process optimization by advanced process control with fault detection system for flash memory. 71–74. 1 indexed citations
15.
Zous, N. K., Wen-Jer Tsai, Tsung‐Chien Lu, et al.. (2004). Lateral Migration of Trapped Holes in a Nitride Storage Flash Memory Cell and Its Qualification Methodology. IEEE Electron Device Letters. 25(9). 649–651. 14 indexed citations
16.
Yeh, Chi‐Ju, Wen-Jer Tsai, Tien‐Chang Lu, et al.. (2004). Reliability and device scaling challenges of trapping charge flash memories. 247–250. 4 indexed citations
17.
Zous, N. K., Chi‐Ju Yeh, Wen-Jer Tsai, et al.. (2004). Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique. 639–640. 2 indexed citations
18.
Chang, Yao‐Wen, C.H. Hsieh, H.C. Lai, et al.. (2004). A Novel Simple CBCM Method Free From Charge Injection-Induced Errors. IEEE Electron Device Letters. 25(5). 262–264. 21 indexed citations
19.
Chang, Yao‐Wen, N. K. Zous, Tsung‐Chien Lu, et al.. (2004). Temperature Effect on Read Current in a Two-Bit Nitride-Based Trapping Storage Flash EEPROM Cell. IEEE Electron Device Letters. 25(7). 495–497. 9 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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