B. Eitan

2.1k total citations
57 papers, 1.6k citations indexed

About

B. Eitan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, B. Eitan has authored 57 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 9 papers in Computer Networks and Communications. Recurrent topics in B. Eitan's work include Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Advanced Memory and Neural Computing (21 papers). B. Eitan is often cited by papers focused on Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Advanced Memory and Neural Computing (21 papers). B. Eitan collaborates with scholars based in Israel, United States and Italy. B. Eitan's co-authors include I. Bloom, D. Frohman‐Bentchkowsky, Paolo Pavan, E. Lusky, D. Finzi, Efraim Aloni, A. Frommer, J. Shappir, Avinoam Kolodny and Yosi Shacham‐Diamand and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

B. Eitan

53 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Eitan Israel 21 1.6k 413 122 98 53 57 1.6k
Tahui Wang Taiwan 18 1.0k 0.7× 161 0.4× 116 1.0× 87 0.9× 43 0.8× 121 1.1k
A. Arreghini Belgium 19 1.1k 0.7× 251 0.6× 314 2.6× 43 0.4× 39 0.7× 93 1.2k
Nicky Lu United States 14 814 0.5× 228 0.6× 32 0.3× 203 2.1× 100 1.9× 44 861
Rich Liu Taiwan 17 803 0.5× 257 0.6× 182 1.5× 35 0.4× 72 1.4× 59 866
Yen-Hao Shih Taiwan 17 647 0.4× 239 0.6× 268 2.2× 51 0.5× 62 1.2× 44 792
P. Cappelletti Italy 15 483 0.3× 185 0.4× 87 0.7× 85 0.9× 31 0.6× 34 559
F. Schanovsky Austria 13 1.1k 0.7× 155 0.4× 29 0.2× 65 0.7× 46 0.9× 52 1.1k
Sung‐Hoi Hur South Korea 11 685 0.4× 176 0.4× 344 2.8× 52 0.5× 37 0.7× 32 854
A. Furnémont Belgium 16 637 0.4× 133 0.3× 125 1.0× 306 3.1× 37 0.7× 68 786
M. Kido Japan 7 763 0.5× 104 0.3× 393 3.2× 61 0.6× 54 1.0× 9 900

Countries citing papers authored by B. Eitan

Since Specialization
Citations

This map shows the geographic impact of B. Eitan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Eitan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Eitan more than expected).

Fields of papers citing papers by B. Eitan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Eitan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Eitan. The network helps show where B. Eitan may publish in the future.

Co-authorship network of co-authors of B. Eitan

This figure shows the co-authorship network connecting the top 25 collaborators of B. Eitan. A scholar is included among the top collaborators of B. Eitan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Eitan. B. Eitan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shacham‐Diamand, Yosi, et al.. (2008). Unified retention model for localized charge trapping nonvolatile memory device. Applied Physics Letters. 92(13). 13 indexed citations
2.
3.
Betser, Y., et al.. (2006). A 4b/cell NROM 1Gb Data-Storage Memory. 448–458. 6 indexed citations
4.
Levy, David H., et al.. (2004). Spatial characterization of localized charge trapping and charge redistribution in the NROM device. Solid-State Electronics. 48(9). 1489–1495. 24 indexed citations
5.
Larcher, Luca, Paolo Pavan, & B. Eitan. (2004). On the Physical Mechanism of the NROM Memory Erase. IEEE Transactions on Electron Devices. 51(10). 1593–1599. 17 indexed citations
6.
Lusky, E., et al.. (2004). Retention loss characteristics of localized charge-trapping devices. 527–530. 8 indexed citations
7.
Lusky, E., et al.. (2004). Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device. Applied Physics Letters. 85(4). 669–671. 26 indexed citations
8.
Shacham‐Diamand, Yosi, et al.. (2004). Lateral charge transport in the nitride layer of the NROM non-volatile memory device. Microelectronic Engineering. 72(1-4). 426–433. 22 indexed citations
9.
Shor, Joseph, et al.. (2003). A 512 Mb NROM flash data storage memory with 8 MB/s data rate. 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315). 1. 100–101. 14 indexed citations
10.
11.
Eitan, B., et al.. (2002). Multilevel flash cells and their trade-offs. 169–172. 31 indexed citations
12.
Eitan, B., Paolo Pavan, I. Bloom, et al.. (2000). NROM: A novel localized trapping, 2-bit nonvolatile memory cell. IEEE Electron Device Letters. 21(11). 543–545. 435 indexed citations
13.
14.
Roy, Ankit, et al.. (1995). A bipolar load CMOS SRAM cell for embedded applications. IEEE Electron Device Letters. 16(5). 169–171. 4 indexed citations
15.
16.
Roy, Anindya, et al.. (1992). A family of user-programmable peripherals with a functional unit architecture. IEEE Journal of Solid-State Circuits. 27(4). 515–529. 3 indexed citations
17.
Eitan, B., et al.. (1991). A user-programmable peripheral with functional unit architecture. 23–24. 1 indexed citations
18.
McCreary, J.L., et al.. (1984). Techniques for a 5-V-only 64K EPROM based upon substrate hot-electron injection. IEEE Journal of Solid-State Circuits. 19(1). 135–143. 1 indexed citations
19.
Eitan, B., D. Frohman‐Bentchkowsky, J. Shappir, & Mária Balog. (1982). Electron trapping in SiO2—An injection mode dependent phenomenon. Applied Physics Letters. 40(6). 523–525. 17 indexed citations
20.
Eitan, B., D. Frohman‐Bentchkowsky, & J. Shappir. (1981). Electron trapping in SiO<inf>2</inf>&amp;#8212;An injection mode dependent phenomenon. 604–607. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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