D. Park

488 total citations
20 papers, 278 citations indexed

About

D. Park is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Biomedical Engineering. According to data from OpenAlex, D. Park has authored 20 papers receiving a total of 278 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 5 papers in Computer Networks and Communications and 2 papers in Biomedical Engineering. Recurrent topics in D. Park's work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Advanced Data Storage Technologies (5 papers). D. Park is often cited by papers focused on Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Advanced Data Storage Technologies (5 papers). D. Park collaborates with scholars based in South Korea, United States and Russia. D. Park's co-authors include Jung Han Choi, Kyung‐Hyun Kim, Kyu Hong Kim, Eunchul Yoon, Ik Soo Chung, B.-I. Ryu, Soo‐Youn Lee, Kyongmin Yeo, Dong-Won Kim and Sung Woo Kim and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

D. Park

19 papers receiving 264 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Park South Korea 11 257 66 31 21 11 20 278
Wandong Kim South Korea 9 205 0.8× 92 1.4× 25 0.8× 48 2.3× 24 2.2× 26 248
Jung-Yu Hsieh Taiwan 10 337 1.3× 93 1.4× 42 1.4× 68 3.2× 14 1.3× 33 361
Hoosung Cho South Korea 6 147 0.6× 74 1.1× 20 0.6× 16 0.8× 10 0.9× 8 172
O. Tsuchiya Japan 8 353 1.4× 75 1.1× 10 0.3× 52 2.5× 20 1.8× 15 380
Ki‐Whan Song South Korea 8 225 0.9× 67 1.0× 16 0.5× 18 0.9× 40 3.6× 27 266
Kang-Deog Suh South Korea 10 247 1.0× 134 2.0× 23 0.7× 58 2.8× 11 1.0× 27 305
K.N. Quader United States 10 369 1.4× 44 0.7× 20 0.6× 7 0.3× 9 0.8× 20 403
Jaihyuk Song South Korea 8 111 0.4× 59 0.9× 9 0.3× 12 0.6× 5 0.5× 20 135
Jongsun Sel South Korea 10 292 1.1× 111 1.7× 7 0.2× 60 2.9× 22 2.0× 16 318
Sung-Joo Hong South Korea 8 234 0.9× 115 1.7× 10 0.3× 32 1.5× 17 1.5× 25 269

Countries citing papers authored by D. Park

Since Specialization
Citations

This map shows the geographic impact of D. Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Park more than expected).

Fields of papers citing papers by D. Park

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Park. The network helps show where D. Park may publish in the future.

Co-authorship network of co-authors of D. Park

This figure shows the co-authorship network connecting the top 25 collaborators of D. Park. A scholar is included among the top collaborators of D. Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Park. D. Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Volfkovich, Yu. M., D. A. Bograchev, А. Yu. Rychagov, et al.. (2018). Electrodes Based on Carbon Nanomaterials: Structure, Properties, and Application to Capacitive Deionization in Static Cells. 127–146. 1 indexed citations
2.
Lee, Su Jung, Yun Seop Yu, Lynn Choi, et al.. (2011). Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge. IEEE Electron Device Letters. 32(9). 1179–1181. 19 indexed citations
3.
Cho, Keun Hwi, Yoonhyuk Jung, S. W. Hwang, et al.. (2007). Observation of three-dimensional shell filling in cylindrical silicon nanowire single electron transistors. Applied Physics Letters. 90(18). 10 indexed citations
4.
Ahn, Young Joon, S.-H. Lee, Dong-Hoon Jang, et al.. (2007). Hybrid nanocrystal FinFET with large P/E window for MLC NAND Flash memory application. Electronics Letters. 43(9). 545–546.
5.
Kim, Sung Woo, Yoon-Seok Choi, K. Lee, et al.. (2006). A 4-Bit Double SONOS Memory (DSM) with 4 Storage Nodes per Cell for Ultimate Multi-Bit Operation. 40–41. 11 indexed citations
6.
Hyun, Jinho, Junemo Koo, Jaehong Lee, et al.. (2006). Paired FinFET Charge Trap Flash Memory for Vertical High Density Storage. 84–85. 11 indexed citations
7.
Cho, Eunyoung, Byungjin Cho, Czang-Ho Lee, et al.. (2006). Technology Breakthrough of Body-Tied FinFET for sub 50 nm NOR Flash Memory. 45. 90–91. 5 indexed citations
8.
9.
Ahn, Youngkeun, Sang‐Wook Cheong, Dongjin Lee, et al.. (2006). Trap Layer Engineered FinFET NAND Flash with Enhanced Memory Window. 88–89. 12 indexed citations
10.
Shin, Hyung‐Joon, et al.. (2005). Reliable 2-bit/cell NVM technology using twin SONOS memory transistor. Electronics Letters. 41(19). 1086–1087. 2 indexed citations
11.
Park, D., et al.. (2005). Study on reliability of metal fuse for sub-100nm technology. 420–421. 3 indexed citations
12.
Choi, Jung Han, et al.. (2004). Effects of Interface Trap Generation and Annihilation on the Data Retention Characteristics of Flash Memory Cells. IEEE Transactions on Device and Materials Reliability. 4(1). 110–117. 103 indexed citations
13.
Park, D., Eunchul Yoon, Jinsoo Choi, et al.. (2004). PMOS body-tied FinFET (Omega MOSFET) characteristics. 33–34. 5 indexed citations
14.
Yeo, Kyongmin, M.S. Kim, Chang‐Seok Lee, et al.. (2004). A Partially Insulated Field-Effect Transistor (PiFET) as a Candidate for Scaled Transistors. IEEE Electron Device Letters. 25(6). 387–389. 20 indexed citations
15.
16.
Jang, Jae Hoon, et al.. (2004). Highly manufacturable 100 nm 6T low power SRAM with single poly-Si gate technology. 64–67. 6 indexed citations
17.
Yang, Wonyoung, et al.. (2004). A Unique Dual-Poly Gate Technology for 1.2-V Mobile DRAM with Simple In situ n<tex>$^+$</tex>-Doped Polysilicon. IEEE Transactions on Electron Devices. 51(10). 1644–1652. 10 indexed citations
18.
Lee, Soo‐Youn, et al.. (2004). Three-Dimensional MBCFET as an Ultimate Transistor. IEEE Electron Device Letters. 25(4). 217–219. 24 indexed citations
19.
Han, Sang-Wook, Seung Min Jung, J.H. Jeong, et al.. (2004). Static noise margin of the full DG-CMOS SRAM cell using bulk FinFETs (Omega MOSFETs). 2.2.1–2.2.4. 19 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Wandong Kim Breakdown of academic impact, for papers by Jung-Yu Hsieh Breakdown of academic impact, for papers by Hoosung Cho Breakdown of academic impact, for papers by O. Tsuchiya Breakdown of academic impact, for papers by Ki‐Whan Song Breakdown of academic impact, for papers by Kang-Deog Suh Breakdown of academic impact, for papers by K.N. Quader Breakdown of academic impact, for papers by Jaihyuk Song Breakdown of academic impact, for papers by Jongsun Sel Breakdown of academic impact, for papers by Sung-Joo Hong
Rankless by CCL
2026