James H. G. Owen

2.3k total citations
92 papers, 1.8k citations indexed

About

James H. G. Owen is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, James H. G. Owen has authored 92 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Atomic and Molecular Physics, and Optics, 35 papers in Electrical and Electronic Engineering and 23 papers in Materials Chemistry. Recurrent topics in James H. G. Owen's work include Surface and Thin Film Phenomena (39 papers), Semiconductor materials and devices (22 papers) and Force Microscopy Techniques and Applications (21 papers). James H. G. Owen is often cited by papers focused on Surface and Thin Film Phenomena (39 papers), Semiconductor materials and devices (22 papers) and Force Microscopy Techniques and Applications (21 papers). James H. G. Owen collaborates with scholars based in United States, United Kingdom and Japan. James H. G. Owen's co-authors include Kazushi Miki, David R. Bowler, G. A. D. Briggs, I. Goldfarb, John N. Randall, G. Andrew D. Briggs, C. M. Goringe, Kunihiro Sakamoto, Joshua B. Ballard and William Barvosa-Carter and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Nano Letters.

In The Last Decade

James H. G. Owen

88 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
James H. G. Owen United States 24 1.2k 830 689 282 215 92 1.8k
Klaus Kuhnke Germany 26 1.4k 1.2× 860 1.0× 596 0.9× 516 1.8× 210 1.0× 78 2.1k
R. Ito Japan 24 1.8k 1.5× 1.9k 2.3× 486 0.7× 231 0.8× 277 1.3× 74 2.4k
T. Farrell United Kingdom 18 568 0.5× 489 0.6× 268 0.4× 163 0.6× 100 0.5× 59 1.1k
Stefan Birner Germany 18 974 0.8× 902 1.1× 659 1.0× 376 1.3× 459 2.1× 51 1.6k
R. Ruel United States 18 1.7k 1.4× 873 1.1× 741 1.1× 461 1.6× 756 3.5× 37 2.5k
А.С. Трифонов Russia 18 408 0.3× 630 0.8× 456 0.7× 369 1.3× 43 0.2× 72 1.2k
F. Martelli Italy 32 1.5k 1.3× 1.9k 2.3× 1.1k 1.7× 952 3.4× 474 2.2× 160 2.9k
Yoshiki Sakuma Japan 28 1.5k 1.2× 1.5k 1.8× 1.0k 1.5× 392 1.4× 179 0.8× 152 2.4k
А. В. Зотов Russia 26 2.1k 1.7× 881 1.1× 1.1k 1.6× 494 1.8× 470 2.2× 239 2.9k
E. Kapon Switzerland 24 1.7k 1.4× 1.2k 1.5× 451 0.7× 360 1.3× 241 1.1× 130 2.0k

Countries citing papers authored by James H. G. Owen

Since Specialization
Citations

This map shows the geographic impact of James H. G. Owen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by James H. G. Owen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites James H. G. Owen more than expected).

Fields of papers citing papers by James H. G. Owen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by James H. G. Owen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by James H. G. Owen. The network helps show where James H. G. Owen may publish in the future.

Co-authorship network of co-authors of James H. G. Owen

This figure shows the co-authorship network connecting the top 25 collaborators of James H. G. Owen. A scholar is included among the top collaborators of James H. G. Owen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with James H. G. Owen. James H. G. Owen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Moheimani, S. O. Reza, et al.. (2024). Atom-resolved imaging with a silicon tip integrated into an on-chip scanning tunneling microscope. Review of Scientific Instruments. 95(3).
2.
Owen, James H. G., et al.. (2023). The Private Papers of John, Earl of Sandwich.
3.
Owen, James H. G., et al.. (2023). Scalable digital atomic precision lithography. 22–22.
4.
Randall, John N., Joshua B. Ballard, James H. G. Owen, et al.. (2021). Advanced Scanning Probe Nanolithography Using GaN Nanowires. Nano Letters. 21(13). 5493–5499. 16 indexed citations
5.
Bussmann, Ezra, James H. G. Owen, John N. Randall, et al.. (2021). Atomic-precision advanced manufacturing for Si quantum computing. MRS Bulletin. 46(7). 607–615. 21 indexed citations
6.
Moheimani, S. O. Reza, et al.. (2020). Controlled removal of hydrogen atoms from H-terminated silicon surfaces. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 38(4). 9 indexed citations
7.
Tajaddodianfar, Farid, S. O. Reza Moheimani, James H. G. Owen, & John N. Randall. (2018). On the effect of local barrier height in scanning tunneling microscopy: Measurement methods and control implications. Review of Scientific Instruments. 89(1). 13701–13701. 19 indexed citations
8.
Ballard, Joshua B., Don D. Dick, Stephen McDonnell, et al.. (2015). Atomically Traceable Nanostructure Fabrication. Journal of Visualized Experiments. e52900–e52900. 4 indexed citations
9.
McDonnell, Stephen, Roberto C. Longo, Oliver Seitz, et al.. (2013). Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination. The Journal of Physical Chemistry C. 117(39). 20250–20259. 65 indexed citations
10.
Randall, John N., et al.. (2012). Automated Scanning Tunneling Microscope image analysis of Si (100):H 2×1 surfaces. Microelectronic Engineering. 98. 214–217. 6 indexed citations
11.
Owen, James H. G., et al.. (2012). Degenerate electronic structure of reconstructed MnSi1.7nanowires on Si(001). Journal of Physics Condensed Matter. 24(9). 95005–95005. 2 indexed citations
12.
Owen, James H. G., et al.. (2011). Patterned atomic layer epitaxy of Si/Si(001):H. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(6). 16 indexed citations
13.
Veyan, Jean-François, Heesung Choi, Min Huang, et al.. (2011). Si2H6 Dissociative Chemisorption and Dissociation on Si(100)-(2×1) and Ge(100)-(2×1). The Journal of Physical Chemistry C. 115(50). 24534–24548. 7 indexed citations
14.
DeGroot, Timothy, et al.. (2009). An Empirical Examination of the Use of a Simulation in Teaching Human Resource Management. 3(3). 2 indexed citations
15.
Owen, James H. G.. (2009). Competing interactions in molecular adsorption: NH3on Si(001). Journal of Physics Condensed Matter. 21(44). 443001–443001. 22 indexed citations
16.
Li, Run‐Wei, Hongjun Liu, James H. G. Owen, et al.. (2007). Al nanocluster arrays onSi(111)−7×7surfaces: Formation process and interactions among clusters. Physical Review B. 76(7). 8 indexed citations
17.
Bowler, David R., James H. G. Owen, & Kazushi Miki. (2006). Comment on ‘Bi nanolines on Si(001): registry with substrate’. Nanotechnology. 17(6). 1801–1802. 4 indexed citations
18.
Owen, James H. G., Kazushi Miki, & David R. Bowler. (2003). Interaction between electronic structure and strain in Bi nanolines on Si(0 0 1). Surface Science. 527(1-3). L177–L183. 33 indexed citations
19.
Goldfarb, I., James H. G. Owen, David R. Bowler, et al.. (1998). In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(3). 1938–1943. 19 indexed citations
20.
Gardiner, W. C., James H. G. Owen, Thomas C. Clark, et al.. (1975). Rate and mechanism of methane pyrolysis from 2000o to 2700oK. Symposium (International) on Combustion. 15(1). 857–868. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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