Ashwin K. Rishinaramangalam

1.1k total citations
31 papers, 924 citations indexed

About

Ashwin K. Rishinaramangalam is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ashwin K. Rishinaramangalam has authored 31 papers receiving a total of 924 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 15 papers in Atomic and Molecular Physics, and Optics and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ashwin K. Rishinaramangalam's work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (14 papers) and Semiconductor Quantum Structures and Devices (11 papers). Ashwin K. Rishinaramangalam is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (14 papers) and Semiconductor Quantum Structures and Devices (11 papers). Ashwin K. Rishinaramangalam collaborates with scholars based in United States, Germany and Poland. Ashwin K. Rishinaramangalam's co-authors include Daniel Feezell, Morteza Monavarian, Mohsen Nami, Arman Rashidi, Andrew Aragon, Michael N. Fairchild, Saadat Mishkat‐Ul‐Masabih, S. D. Hersee, P.M. Varangis and S. R. J. Brueck and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Ashwin K. Rishinaramangalam

30 papers receiving 895 citations

Peers

Countries citing papers authored by Ashwin K. Rishinaramangalam

Since Specialization

Citations

This map shows the geographic impact of Ashwin K. Rishinaramangalam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ashwin K. Rishinaramangalam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ashwin K. Rishinaramangalam more than expected).

Fields of papers citing papers by Ashwin K. Rishinaramangalam

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ashwin K. Rishinaramangalam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ashwin K. Rishinaramangalam. The network helps show where Ashwin K. Rishinaramangalam may publish in the future.

Co-authorship network of co-authors of Ashwin K. Rishinaramangalam

This figure shows the co-authorship network connecting the top 25 collaborators of Ashwin K. Rishinaramangalam. A scholar is included among the top collaborators of Ashwin K. Rishinaramangalam based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ashwin K. Rishinaramangalam. Ashwin K. Rishinaramangalam is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Advanced Scanning Probe Nanolithography Using GaN Nanowires 2021 ·Nano Letters ·(unknown), (unknown), John N. Randall, Joshua B. Ballard, James H. G. Owen, Ashwin K. Rishinaramangalam, Alexander Reum, Teodor Gotszalk, Daniel Feezell, Ivo W. Rangelow, Tito Busani	16
2	Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials 2021 ·The Journal of Physical Chemistry C ·Luis Miaja‐Avila, Benjamin W. Caplins, Ann N. Chiaramonti, Paul T. Blanchard, Matt D. Brubaker, Albert V. Davydov, David R. Diercks, Brian P. Gorman, Ashwin K. Rishinaramangalam, Daniel Feezell, Kris A. Bertness, Norman A. Sanford	5
3	High brightness MOCVD-grown laser diodes using RPCVD tunnel junctions 2020 ·J.D. Brown, (unknown), Qian Gao, (unknown), M. Wintrebert‐Fouquet, (unknown), Patrick Chen, (unknown), Ashwin K. Rishinaramangalam, Daniel Feezell, (unknown)	1
4	Field emission scanning probe lithography with GaN nanowires on active cantilevers 2020 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·(unknown), Ashwin K. Rishinaramangalam, Daniel Feezell, Tito Busani, (unknown), Alexander Reum, Mathias Holz, Teodor Gotszalk, (unknown), Martin Hofmann, Ahmad Ahmad, Tzvetan Ivanov, Ivo W. Rangelow	6
5	High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth 2020 ·IEEE Photonics Technology Letters ·Arman Rashidi, Ashwin K. Rishinaramangalam, Andrew Aragon, Saadat Mishkat‐Ul‐Masabih, Morteza Monavarian, Changmin Lee, Steven P. DenBaars, Daniel Feezell	14
6	Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN 2018 ·Applied Physics Letters ·Saadat Mishkat‐Ul‐Masabih, Ting S. Luk, Ashwin K. Rishinaramangalam, Morteza Monavarian, Mohsen Nami, Daniel Feezell	39
7	Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes 2018 ·Scientific Reports ·Mohsen Nami, (unknown), (unknown), Saadat Mishkat‐Ul‐Masabih, Ashwin K. Rishinaramangalam, S. R. J. Brueck, Igal Brener, Daniel Feezell	76
8	Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar $(10\bar{1}1)$ core-shell triangular nanostripe GaN/InGaN LEDs 2018 ·Nanotechnology ·Serdal Okur, Ashwin K. Rishinaramangalam, Saadat Mishkat‐Ul‐Masabih, Mohsen Nami, Sheng Liu, Igal Brener, S. R. J. Brueck, Daniel Feezell	5
9	Experimental study of field emission from ultrasharp silicon, diamond, GaN, and tungsten tips in close proximity to the counter electrode 2018 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Claudia Lenk, Steve Lenk, Mathias Holz, Elshad Guliyev, Martin Hofmann, Tzvetan Ivanov, Ivo W. Rangelow, (unknown), Ashwin K. Rishinaramangalam, Daniel Feezell, Tito Busani	15
10	Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes 2018 ·Applied Physics Letters ·Morteza Monavarian, Arman Rashidi, Andrew Aragon, Sang Ho Oh, Ashwin K. Rishinaramangalam, Steven P. DenBaars, Daniel Feezell	57
11	Nonpolar ${m}$ -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth 2018 ·IEEE Electron Device Letters ·Arman Rashidi, Morteza Monavarian, Andrew Aragon, Ashwin K. Rishinaramangalam, Daniel Feezell	98
12	Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes 2017 ·Journal of Applied Physics ·Arman Rashidi, Mohsen Nami, Morteza Monavarian, Andrew Aragon, (unknown), (unknown), Saadat Mishkat‐Ul‐Masabih, Ashwin K. Rishinaramangalam, Daniel Feezell	65
13	High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication 2017 ·Conference on Lasers and Electro-Optics ·Arman Rashidi, Morteza Monavarian, Andrew Aragon, Serdal Okur, Mohsen Nami, Ashwin K. Rishinaramangalam, Saadat Mishkat‐Ul‐Masabih, Daniel Feezell	3
14	Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy 2016 ·Nanotechnology ·Mohsen Nami, (unknown), Serdal Okur, Ashwin K. Rishinaramangalam, Sheng Liu, Igal Brener, Daniel Feezell	33
15	Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire 2016 ·Applied Physics Express ·Ashwin K. Rishinaramangalam, Mohsen Nami, Michael N. Fairchild, Darryl Shima, Ganesh Balakrishnan, S. R. J. Brueck, Daniel Feezell	18
16	Ordered arrays of bottom-up III-nitride core-shell nanostructures 2015 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Ashwin K. Rishinaramangalam, Mohsen Nami, (unknown), (unknown), Darryl Shima, Michael N. Fairchild, Ganesh Balakrishnan, S. R. J. Brueck, Daniel Feezell	6
17	Selective-Area Growth of III-Nitride Core-Shell Nanowalls for Light-Emitting and Laser Diodes 2014 ·Ashwin K. Rishinaramangalam, Michael N. Fairchild, (unknown), Darryl Shima, Ganesh Balakrishnan, Daniel Feezell	2
18	Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices 2014 ·Journal of Electronic Materials ·Ashwin K. Rishinaramangalam, (unknown), Michael N. Fairchild, Jeremy B. Wright, Darryl Shima, Ganesh Balakrishnan, Igal Brener, S. R. J. Brueck, Daniel Feezell	24
19	Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes 2013 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Ashwin K. Rishinaramangalam, Michael N. Fairchild, S. D. Hersee, Ganesh Balakrishnan, Daniel Feezell	8
20	Threading defect elimination in GaN nanowires 2011 ·Journal of materials research/Pratt's guide to venture capital sources ·S. D. Hersee, Ashwin K. Rishinaramangalam, Michael N. Fairchild, Lei Zhang, P.M. Varangis	127

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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