J. I. Pánkové

15.3k total citations · 4 hit papers
168 papers, 11.9k citations indexed

About

J. I. Pánkové is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, J. I. Pánkové has authored 168 papers receiving a total of 11.9k indexed citations (citations by other indexed papers that have themselves been cited), including 114 papers in Electrical and Electronic Engineering, 71 papers in Condensed Matter Physics and 64 papers in Materials Chemistry. Recurrent topics in J. I. Pánkové's work include GaN-based semiconductor devices and materials (63 papers), Semiconductor materials and devices (40 papers) and Thin-Film Transistor Technologies (37 papers). J. I. Pánkové is often cited by papers focused on GaN-based semiconductor devices and materials (63 papers), Semiconductor materials and devices (40 papers) and Thin-Film Transistor Technologies (37 papers). J. I. Pánkové collaborates with scholars based in United States, China and Japan. J. I. Pánkové's co-authors include D. A. Kiewit, J. E. Berkeyheiser, David Carlson, J.A. Hutchby, C. H. Qiu, P. J. Zanzucchi, John T. Torvik, M. L. Tarng, N. H. Nickel and N. M. Johnson and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. I. Pánkové

168 papers receiving 11.2k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Optical Processes in Semiconductors

1972 3.9k citations J. I. Pánkové et al. profile →
Optical processes in semiconductors

1975 1.4k citations J. I. Pánkové CERN Document Server (European Organization for Nuclear Research) profile →
Epitaxially grown AlN and its optical band gap

1973 485 citations Woosoon Yim, E. J. Stofko et al. Journal of Applied Physics profile →
Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen

1983 359 citations J. I. Pánkové, David Carlson et al. Physical Review Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. I. Pánkové United States	42	7.7k	6.6k	3.4k	3.4k	2.2k	168	11.9k
B. Abeles United States	48	5.2k 0.7×	6.5k 1.0×	3.4k 1.0×	2.1k 0.6×	1.7k 0.8×	144	10.9k
David R. Penn United States	40	6.6k 0.8×	5.8k 0.9×	4.8k 1.4×	1.3k 0.4×	2.1k 0.9×	113	14.3k
E. R. Weber United States	39	5.1k 0.7×	4.3k 0.7×	3.6k 1.1×	2.6k 0.8×	2.1k 1.0×	219	8.6k
John E. Northrup United States	67	7.5k 1.0×	5.9k 0.9×	6.7k 1.9×	5.8k 1.7×	3.1k 1.4×	181	15.2k
J. D. Budai United States	53	3.6k 0.5×	8.1k 1.2×	1.7k 0.5×	4.0k 1.2×	4.0k 1.8×	266	12.2k
E. M. Gyorgy United States	50	2.4k 0.3×	3.6k 0.5×	3.3k 1.0×	3.8k 1.1×	3.7k 1.7×	331	10.0k
Fred H. Pollak United States	56	9.2k 1.2×	5.8k 0.9×	8.4k 2.4×	1.8k 0.5×	677 0.3×	344	13.7k
G. Lucovsky United States	64	13.2k 1.7×	12.6k 1.9×	3.6k 1.0×	1.1k 0.3×	2.7k 1.2×	532	18.8k
D. C. Look United States	58	10.2k 1.3×	14.1k 2.1×	2.8k 0.8×	3.8k 1.1×	7.8k 3.5×	361	18.8k
David Emin United States	45	3.5k 0.5×	6.0k 0.9×	2.0k 0.6×	2.2k 0.7×	2.0k 0.9×	173	9.8k

Countries citing papers authored by J. I. Pánkové

Since Specialization

Citations

This map shows the geographic impact of J. I. Pánkové's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. I. Pánkové with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. I. Pánkové more than expected).

Fields of papers citing papers by J. I. Pánkové

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. I. Pánkové. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. I. Pánkové. The network helps show where J. I. Pánkové may publish in the future.

Co-authorship network of co-authors of J. I. Pánkové

This figure shows the co-authorship network connecting the top 25 collaborators of J. I. Pánkové. A scholar is included among the top collaborators of J. I. Pánkové based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. I. Pánkové. J. I. Pánkové is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zhou, Weilie, F. Namavar, P. C. Colter, et al.. (1999). Characterization of GaN Grown on SiC on Si/SiO₂/Si by Metalorganic Chemical Vapor Deposition. Journal of materials research/Pratt's guide to venture capital sources. 14(4). 1171–1174. 4 indexed citations

Pánkové, J. I. & T. D. Moustakas. (1998). Gallium nitride (GaN). Academic Press eBooks. 55 indexed citations

Torvik, John T., J. I. Pánkové, E. Iliopoulos, Hock M. Ng, & T. D. Moustakas. (1998). Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy. Applied Physics Letters. 72(2). 244–245. 15 indexed citations

Alaghband, Gita, et al.. (1997). Numerical modelling and characterization of high-frequency high-power high-temperature GaN/SiC heterostructure bipolar transistors. International Journal of Electronics. 82(6). 567–574. 3 indexed citations

Leksono, M. W., et al.. (1994). Infrared Luminescence from MOCVD Gan. MRS Proceedings. 339. 2 indexed citations

Pánkové, J. I.. (1989). Perspective On Gallium Nitride. MRS Proceedings. 162. 110 indexed citations

Pánkové, J. I., Robert K. Willardson, & Albert C. Beer. (1984). Preparation and structure. Academic Press eBooks. 9 indexed citations

Pánkové, J. I., et al.. (1984). Pankoveet al.Respond. Physical Review Letters. 53(8). 856–856. 4 indexed citations

Schade, H. & J. I. Pánkové. (1981). ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS SILICON. Le Journal de Physique Colloques. 42(C4). C4–327. 6 indexed citations

10.

Pánkové, J. I.. (1979). Field-induced population inversion of distant donor-acceptor pairs. IEEE Transactions on Electron Devices. 26(8). 1245–1247. 1 indexed citations

11.

Pánkové, J. I., et al.. (1979). Photoluminescence from hydrogenated ion-implanted crystalline silicon. Applied Physics Letters. 35(12). 937–939. 17 indexed citations

12.

Pánkové, J. I., et al.. (1979). Optical properties of boron hydride BHx. Journal of Applied Physics. 50(9). 6018–6019. 4 indexed citations

13.

Pánkové, J. I. & David Carlson. (1976). Electroluminescence in amorphous silicon. Applied Physics Letters. 29(9). 620–622. 94 indexed citations

14.

Pánkové, J. I.. (1975). Optical processes in semiconductors. CERN Document Server (European Organization for Nuclear Research). 1363 indexed citations breakdown →

15.

Pánkové, J. I. & J. E. Berkeyheiser. (1974). Properties of Zn-doped GaN. II. Photoconductivity. Journal of Applied Physics. 45(9). 3892–3895. 38 indexed citations

16.

Pánkové, J. I., M. T. Duffy, Edward A. Miller, & J. E. Berkeyheiser. (1973). Luminescence of insulating Be-doped and Li-doped GaN. Journal of Luminescence. 8(1). 89–93. 38 indexed citations

17.

Yim, Woosoon, E. J. Stofko, P. J. Zanzucchi, et al.. (1973). Epitaxially grown AlN and its optical band gap. Journal of Applied Physics. 44(1). 292–296. 485 indexed citations breakdown →

18.

Pánkové, J. I., J. E. Berkeyheiser, H. Paul Maruska, & J. P. Wittke. (1970). Luminescent properties of GaN. Solid State Communications. 8(13). 1051–1053. 69 indexed citations

19.

Ochs, Sidney & J. I. Pánkové. (1964). Injection-luminescence pumping of a CaF₂:Dy²⁺laser. Proceedings of the IEEE. 52(6). 713–714. 21 indexed citations

20.

Pánkové, J. I.. (1960). Influence of Degeneracy on Recombination Radiation in Germanium. Physical Review Letters. 4(1). 20–21. 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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