J. I. Pánkové

15.3k citations

168 papers · 11.9k indexed · 4 hit papers · h-index 42

Electrical and Electronic Engineering top 0.2%
Materials Chemistry top 0.5%
Atomic and Molecular Physics, and Optics top 0.5%
Condensed Matter Physics top 0.2%
Electronic, Optical and Magnetic Materials top 1%

Co-authors: D. A. Kiewit J. E. Berkeyheiser David Carlson J.A. Hutchby C. H. Qiu P. J. Zanzucchi John T. Torvik M. L. Tarng
Topics: GaN-based semiconductor devices and materials (63 papers)Semiconductor materials and devices (40 papers)Thin-Film Transistor Technologies (37 papers)
Cited by: Condensed Matter Physics Materials Chemistry Electrical and Electronic Engineering
Journals: Physical Review Letters Physical review. B, Condensed matter Applied Physics Letters
Partner nations: United States China Japan

In The Last Decade

J. I. Pánkové

168 papers receiving 11.2k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Optical Processes in Semiconductors

1972 3.9k citations J. I. Pánkové et al. profile →
Optical processes in semiconductors

1975 1.4k citations J. I. Pánkové profile →
Epitaxially grown AlN and its optical band gap

1973 485 citations J. I. Pánkové et al. Journal of Applied Physics profile →
Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen

1983 359 citations J. I. Pánkové, David Carlson et al. Physical Review Letters profile →

Peers

Countries citing papers authored by J. I. Pánkové

Since Specialization

Citations

This map shows the geographic impact of J. I. Pánkové's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. I. Pánkové with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. I. Pánkové more than expected).

Fields of papers citing papers by J. I. Pánkové

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. I. Pánkové. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. I. Pánkové. The network helps show where J. I. Pánkové may publish in the future.

Co-authorship network of co-authors of J. I. Pánkové

This figure shows the co-authorship network connecting the top 25 collaborators of J. I. Pánkové. A scholar is included among the top collaborators of J. I. Pánkové based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. I. Pánkové. J. I. Pánkové is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	500°C operation of a GaN/SiC heterojunction bipolar transistor 2002 ·(unknown),J. I. Pánkové,M. W. Leksono,Bart Van Zeghbroeck	1
2	Gallium nitride (GaN) 1998 ·Academic Press eBooks ·J. I. Pánkové,T. D. Moustakas	55
3	Optical characterization of GaN/SiC n-p heterojunctions and p-SiC 1998 ·Applied Physics Letters ·John T. Torvik,Changhua Qiu,M. W. Leksono,J. I. Pánkové	34
4	Photoluminescence excitation measurements on erbium implanted GaN 1997 ·Journal of Applied Physics ·John T. Torvik,R. J. Feuerstein,C. H. Qiu,J. I. Pánkové,F. Namavar	14
5	Photoluminescence properties of porous silicon 1992 ·AIP conference proceedings ·Michael J. Heben,Yao Xiao,(unknown),Y. S. Tsuo,J. I. Pánkové,S. K. Deb	2
6	Perspective On Gallium Nitride 1989 ·MRS Proceedings ·J. I. Pánkové	110
7	Windowless helium lamp assisted chemical vapor deposition of hydrogenated amorphous silicon 1988 ·Applied Physics Letters ·(unknown),Yu Zhang,G. J. Collins,Enakshi Bhattacharya,J. I. Pánkové	6
8	A new electroluminescent display device 1988 ·Journal of Luminescence ·J. I. Pánkové	4
9	Preparation and structure 1984 ·Academic Press eBooks ·J. I. Pánkové,Robert K. Willardson,Albert C. Beer	9
10	ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS SILICON 1981 ·Le Journal de Physique Colloques ·H. Schade,J. I. Pánkové	6
11	Optical properties of boron hydride BHx 1979 ·Journal of Applied Physics ·J. I. Pánkové,(unknown)	4
12	Electroluminescence in amorphous silicon 1976 ·Applied Physics Letters ·J. I. Pánkové,David Carlson	94
13	Blue Anti-Stokes Electroluminescence in GaN 1975 ·Physical Review Letters ·J. I. Pánkové	23
14	Properties of Zn-doped GaN. II. Photoconductivity 1974 ·Journal of Applied Physics ·J. I. Pánkové,J. E. Berkeyheiser	38
15	Luminescence of insulating Be-doped and Li-doped GaN 1973 ·Journal of Luminescence ·J. I. Pánkové,M. T. Duffy,Edward A. Miller,J. E. Berkeyheiser	38
16	Luminescence in GaN 1973 ·Journal of Luminescence ·J. I. Pánkové	119
17	Luminescent Properties of Energy-Band-Tail States in GaAs:Si 1970 ·Physical review. B, Solid state ·David Redfield,J. P. Wittke,J. I. Pánkové	60
18	New effect at superconducting contacts 1966 ·Physics Letters ·J. I. Pánkové	18
19	Influence of Degeneracy on Recombination Radiation in Germanium 1960 ·Physical Review Letters ·J. I. Pánkové	33
20	Return to sphericity following centrifugal elongation of rat mast cells 1960 ·Experimental Cell Research ·Jacques Padawer,D Marsland,J. I. Pánkové	4

About J. I. Pánkové

J. I. Pánkové is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 168 papers that have together received 11.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (63 papers), Semiconductor materials and devices (40 papers) and Thin-Film Transistor Technologies (37 papers). The work is most often cited by research in Condensed Matter Physics (3.4k citations), Materials Chemistry (6.6k citations) and Electrical and Electronic Engineering (7.7k citations). J. I. Pánkové has collaborated with scholars based in United States, China and Japan. Frequent co-authors include D. A. Kiewit, J. E. Berkeyheiser, David Carlson, J.A. Hutchby, C. H. Qiu, P. J. Zanzucchi, John T. Torvik, M. L. Tarng, N. M. Johnson and N. H. Nickel. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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