V. Gottschalch

2.2k total citations
145 papers, 1.7k citations indexed

About

V. Gottschalch is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, V. Gottschalch has authored 145 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 110 papers in Atomic and Molecular Physics, and Optics, 80 papers in Electrical and Electronic Engineering and 48 papers in Materials Chemistry. Recurrent topics in V. Gottschalch's work include Semiconductor Quantum Structures and Devices (88 papers), Semiconductor materials and devices (29 papers) and GaN-based semiconductor devices and materials (27 papers). V. Gottschalch is often cited by papers focused on Semiconductor Quantum Structures and Devices (88 papers), Semiconductor materials and devices (29 papers) and GaN-based semiconductor devices and materials (27 papers). V. Gottschalch collaborates with scholars based in Germany, United States and Slovakia. V. Gottschalch's co-authors include M. Schubert, G. Leibiger, G. Wagner, Jens Bauer, H. Paetzelt, B. Rheinländer, J. Šik, G. Benndorf, Tino Hofmann and Marius Grundmann and has published in prestigious journals such as Advanced Materials, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

V. Gottschalch

142 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Gottschalch Germany 22 1.0k 998 697 381 355 145 1.7k
Akiko Natori Japan 20 607 0.6× 1.1k 1.1× 913 1.3× 287 0.8× 189 0.5× 99 1.9k
M. Hanke Germany 19 513 0.5× 632 0.6× 633 0.9× 285 0.7× 215 0.6× 85 1.2k
N. Moriya United States 12 883 0.9× 467 0.5× 812 1.2× 185 0.5× 181 0.5× 34 1.5k
M. Gendry France 25 2.1k 2.1× 1.9k 1.9× 1.1k 1.5× 556 1.5× 180 0.5× 200 2.7k
Rüdiger Schmidt‐Grund Germany 27 956 0.9× 753 0.8× 1.5k 2.1× 556 1.5× 223 0.6× 106 2.3k
S. Marcinkevičius Sweden 27 1.1k 1.1× 1.1k 1.1× 688 1.0× 282 0.7× 894 2.5× 131 1.9k
G. Guizzetti Italy 26 1.4k 1.4× 1.3k 1.3× 785 1.1× 341 0.9× 151 0.4× 130 2.0k
E. Kamińska Poland 24 1.3k 1.2× 730 0.7× 947 1.4× 227 0.6× 522 1.5× 189 2.0k
R. Pässler Germany 22 922 0.9× 754 0.8× 607 0.9× 102 0.3× 213 0.6× 56 1.4k
N. Dietz United States 22 826 0.8× 595 0.6× 803 1.2× 351 0.9× 770 2.2× 129 1.7k

Countries citing papers authored by V. Gottschalch

Since Specialization
Citations

This map shows the geographic impact of V. Gottschalch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Gottschalch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Gottschalch more than expected).

Fields of papers citing papers by V. Gottschalch

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Gottschalch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Gottschalch. The network helps show where V. Gottschalch may publish in the future.

Co-authorship network of co-authors of V. Gottschalch

This figure shows the co-authorship network connecting the top 25 collaborators of V. Gottschalch. A scholar is included among the top collaborators of V. Gottschalch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Gottschalch. V. Gottschalch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gottschalch, V., Harald Krautscheid, Claudia S. Schnohr, et al.. (2023). Optical properties of AgxCu1–xI alloy thin films. AIP Advances. 13(3). 4 indexed citations
2.
Gottschalch, V., Gabriele Benndorf, S. Blaurock, et al.. (2023). Epitaxial Growth of AgxCu1−xI on Al2O3(0001). physica status solidi (b). 260(2). 1 indexed citations
3.
Gottschalch, V., Gabriele Benndorf, S. Blaurock, et al.. (2022). Epitaxial Growth of AgxCu1−xI on Al2O3(0001). physica status solidi (b). 260(2). 2 indexed citations
4.
Gottschalch, V., Gabriele Benndorf, Susanne Selle, et al.. (2021). Epitaxial growth of rhombohedral β- and cubic γ-CuI. Journal of Crystal Growth. 570. 126218–126218. 10 indexed citations
5.
Blaurock, S., Gabriele Benndorf, V. Gottschalch, et al.. (2017). Lasing in cuprous iodide microwires. Applied Physics Letters. 111(3). 14 indexed citations
6.
Spemann, D. & V. Gottschalch. (2010). Boron lattice site location in (BGa)As and (BGa)P thin films studied using RBS and NRA with a channeled He+ ion beam. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 268(11-12). 2069–2073. 2 indexed citations
7.
Gottschalch, V., Kilian Mergenthaler, G. Wagner, et al.. (2009). Growth of β‐Ga2O3 on Al2O3 and GaAs using metal‐organic vapor‐phase epitaxy. physica status solidi (a). 206(2). 243–249. 82 indexed citations
8.
Schmidt‐Grund, Rüdiger, B. Rheinländer, H. Hochmuth, et al.. (2007). ZnO micro-pillar resonators with coaxial Bragg reflectors. AIP conference proceedings. 893. 1137–1138. 1 indexed citations
9.
Scholz, Steffen, et al.. (2006). MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer. Crystal Research and Technology. 41(2). 111–116. 14 indexed citations
10.
Schmidt‐Grund, Rüdiger, et al.. (2005). a-Si/SiOx Bragg-reflectors on micro-structured InP. Thin Solid Films. 483(1-2). 257–260. 2 indexed citations
11.
Leibiger, G., V. Gottschalch, A. Kasic, & M. Schubert. (2001). Phonon modes of GaNyP1−y (0.006⩽y⩽0.0285) measured by midinfrared spectroscopic ellipsometry. Applied Physics Letters. 79(21). 3407–3409. 13 indexed citations
12.
Zimmer, K., F. Herfurth, Anika Braun, et al.. (1998). Excimer laser etching of GaAs, AlxGa1−xAs and CuInSe2 in chlorine atmosphere. Applied Surface Science. 127-129. 800–804. 6 indexed citations
13.
Rheinländer, B., Heidemarie Schmidt, & V. Gottschalch. (1997). Spectroscopic ellipsometric studies of InAs monolayers embedded in GaAs. Applied Physics Letters. 70(13). 1736–1738. 11 indexed citations
14.
Schwabe, R., et al.. (1995). Optical investigations on isovalent δ layers in III-V semiconductor compounds. Journal of Applied Physics. 77(12). 6295–6299. 22 indexed citations
15.
Gottschalch, V., et al.. (1986). Thermal Resistivity of GaInAsP Alloy. Experimental Results. Crystal Research and Technology. 21(5). 12 indexed citations
16.
Gottschalch, V., et al.. (1985). The determination of liquidus data in the In‐As system. Crystal Research and Technology. 20(9). 1205–1209. 4 indexed citations
17.
Wagner, G. & V. Gottschalch. (1985). Helical dislocations in Sn-doped GaP epitaxial layers and their characterization by transmission electron microscopy. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 52(3). 395–406. 11 indexed citations
18.
Pietsch, U., J. Bąk‐Misiuk, & V. Gottschalch. (1984). The linear thermal expansion coefficient of a GaxIn1-xAsyyP1y layer on in P:Sn substrate. physica status solidi (a). 82(2). K137–K140. 8 indexed citations
19.
Gottschalch, V.. (1979). Structural Etching of {001} and {110} Faces of Various AIIIBV Compounds. Kristall und Technik. 14(8). 939–947. 10 indexed citations
20.
Gottschalch, V., et al.. (1972). Ätzuntersuchungen an Verneuilspinellen. Kristall und Technik. 7(9). 1007–1017. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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