A.S. Segal

828 total citations
38 papers, 625 citations indexed

About

A.S. Segal is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, A.S. Segal has authored 38 papers receiving a total of 625 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 21 papers in Condensed Matter Physics and 10 papers in Materials Chemistry. Recurrent topics in A.S. Segal's work include GaN-based semiconductor devices and materials (21 papers), Silicon Carbide Semiconductor Technologies (11 papers) and Semiconductor materials and devices (9 papers). A.S. Segal is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Silicon Carbide Semiconductor Technologies (11 papers) and Semiconductor materials and devices (9 papers). A.S. Segal collaborates with scholars based in Russia, Germany and Canada. A.S. Segal's co-authors include Yu.N. Makarov, E. N. Mokhov, M.G. Ramm, A. D. Roenkov, S. Yu. Karpov, Yu. A. Vodakov, H. Helava, T. Yu. Chemekova, J. A. Charles and E.V. Yakovlev and has published in prestigious journals such as Japanese Journal of Applied Physics, Journal of Crystal Growth and physica status solidi (b).

In The Last Decade

A.S. Segal

35 papers receiving 574 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A.S. Segal Russia 15 435 292 223 174 143 38 625
M.G. Ramm Russia 16 319 0.7× 432 1.5× 186 0.8× 132 0.8× 151 1.1× 25 666
J. Wollweber Germany 14 413 0.9× 346 1.2× 244 1.1× 240 1.4× 213 1.5× 50 677
Yuri Makarov Russia 11 304 0.7× 325 1.1× 205 0.9× 174 1.0× 154 1.1× 55 616
Yu. A. Vodakov Russia 15 230 0.5× 445 1.5× 167 0.7× 115 0.7× 89 0.6× 29 619
Jyrki Molarius Finland 5 169 0.4× 201 0.7× 120 0.5× 130 0.7× 275 1.9× 9 476
M.S. Ramm Russia 18 227 0.5× 472 1.6× 135 0.6× 124 0.7× 73 0.5× 50 670
Gye-Won Hong South Korea 15 338 0.8× 128 0.4× 268 1.2× 138 0.8× 167 1.2× 51 590
J. Eickemeyer Germany 18 436 1.0× 130 0.4× 378 1.7× 338 1.9× 127 0.9× 51 791
D. I. Florescu United States 13 686 1.6× 420 1.4× 629 2.8× 175 1.0× 94 0.7× 26 962
J. M. DeLucca United States 15 299 0.7× 445 1.5× 134 0.6× 190 1.1× 36 0.3× 21 597

Countries citing papers authored by A.S. Segal

Since Specialization
Citations

This map shows the geographic impact of A.S. Segal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.S. Segal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.S. Segal more than expected).

Fields of papers citing papers by A.S. Segal

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.S. Segal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.S. Segal. The network helps show where A.S. Segal may publish in the future.

Co-authorship network of co-authors of A.S. Segal

This figure shows the co-authorship network connecting the top 25 collaborators of A.S. Segal. A scholar is included among the top collaborators of A.S. Segal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.S. Segal. A.S. Segal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Segal, A.S., E.V. Yakovlev, Р.А. Талалаев, et al.. (2018). Optimization of deposition uniformity during silicon epitaxy in deep trenches. Semiconductor Science and Technology. 34(2). 24001–24001. 2 indexed citations
2.
Rauf, H., et al.. (2013). On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors. Journal of Crystal Growth. 393. 103–107. 15 indexed citations
3.
Yakovlev, E.V., A.S. Segal, K. A. Bulashevich, S. Yu. Karpov, & Р.А. Талалаев. (2013). Correlations between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures. Japanese Journal of Applied Physics. 52(8S). 08JB15–08JB15. 5 indexed citations
4.
Segal, A.S., et al.. (2011). AlInN MOVPE: growth chemistry and analysis of trends. Journal of Crystal Growth. 352(1). 199–202. 11 indexed citations
5.
Segal, A.S., et al.. (2009). Modeling analysis of AlN and AlGaN HVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 5 indexed citations
6.
Талалаев, Р.А., A.S. Segal, E.V. Yakovlev, et al.. (2008). Effect of metallic surface coverage on material quality in III‐nitride MOVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1691–1694. 5 indexed citations
7.
Panteleev, V. N., et al.. (2008). Growth of single-crystalline GaN layers in a horizontal reactor by chloride epitaxy. Technical Physics. 53(12). 1602–1605. 1 indexed citations
8.
9.
Chemekova, T. Yu., E. N. Mokhov, S. S. Nagalyuk, et al.. (2008). Sublimation growth of 2 inch diameter bulk AlN crystals. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1612–1614. 40 indexed citations
10.
Segal, A.S., et al.. (2005). Kinetics of SiGe chemical vapor deposition from chloride precursors. Journal of Crystal Growth. 287(2). 446–449. 2 indexed citations
11.
Richter, E., Ch. Hennig, M. Weyers, et al.. (2005). Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE. Journal of Crystal Growth. 277(1-4). 6–12. 47 indexed citations
12.
Segal, A.S., et al.. (2004). Surface chemistry and transport effects in GaN hydride vapor phase epitaxy. Journal of Crystal Growth. 270(3-4). 384–395. 24 indexed citations
13.
Mokhov, E. N., et al.. (2004). Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals. Materials science forum. 457-460. 1545–1548. 3 indexed citations
14.
Mokhov, E. N., A. D. Roenkov, Yu. A. Vodakov, et al.. (2003). Growth of AlN Bulk Crystals by Sublimation Sandwich Method. Materials science forum. 433-436. 979–982. 5 indexed citations
15.
Karpov, S. Yu., et al.. (2002). Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy. MRS Proceedings. 743. 2 indexed citations
16.
Segal, A.S., et al.. (2001). Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors. Microelectronic Engineering. 56(1-2). 93–98. 4 indexed citations
17.
Segal, A.S., S. Yu. Karpov, Yu.N. Makarov, et al.. (1999). Transport phenomena in sublimation growth of SiC bulk crystals. Materials Science and Engineering B. 61-62. 40–43. 21 indexed citations
18.
Segal, A.S., et al.. (1999). Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition. Materials Science and Engineering B. 61-62. 176–178. 10 indexed citations
19.
Mokhov, E. N., M.G. Ramm, M.S. Ramm, et al.. (1998). Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container. Materials science forum. 264-268. 61–64. 22 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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