C. J. Kao

472 total citations
19 papers, 420 citations indexed

About

C. J. Kao is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, C. J. Kao has authored 19 papers receiving a total of 420 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 12 papers in Electronic, Optical and Magnetic Materials and 8 papers in Biomedical Engineering. Recurrent topics in C. J. Kao's work include GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (12 papers) and ZnO doping and properties (6 papers). C. J. Kao is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (12 papers) and ZnO doping and properties (6 papers). C. J. Kao collaborates with scholars based in Taiwan, United States and China. C. J. Kao's co-authors include Jinn‐Kong Sheu, Shoou‐Jinn Chang, G.C. Chi, J.M. Tsai, Nils C. Ger­hardt, C. J. Tun, F. Ren, S. J. Pearton, Y.K. Su and Wei‐Chi Lai and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C. J. Kao

19 papers receiving 410 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. J. Kao Taiwan 11 281 228 196 191 95 19 420
J. L. Pau Spain 8 299 1.1× 286 1.3× 168 0.9× 225 1.2× 94 1.0× 18 445
Yuichi Sato Japan 10 154 0.5× 138 0.6× 183 0.9× 271 1.4× 77 0.8× 49 399
Will Mecouch United States 10 368 1.3× 273 1.2× 313 1.6× 178 0.9× 89 0.9× 18 505
D. Y. Song United States 11 310 1.1× 161 0.7× 146 0.7× 199 1.0× 95 1.0× 21 383
Albert Minj Belgium 12 261 0.9× 164 0.7× 229 1.2× 207 1.1× 92 1.0× 48 476
E. Cicek United States 8 315 1.1× 341 1.5× 126 0.6× 195 1.0× 63 0.7× 14 472
Malleswararao Tangi Saudi Arabia 14 301 1.1× 244 1.1× 181 0.9× 411 2.2× 84 0.9× 33 587
V. Garber Israel 10 205 0.7× 264 1.2× 326 1.7× 242 1.3× 165 1.7× 24 574
Wen‐How Lan Taiwan 11 189 0.7× 76 0.3× 180 0.9× 147 0.8× 80 0.8× 42 337
Byung Oh Jung South Korea 11 236 0.8× 250 1.1× 195 1.0× 367 1.9× 39 0.4× 18 469

Countries citing papers authored by C. J. Kao

Since Specialization
Citations

This map shows the geographic impact of C. J. Kao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. J. Kao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. J. Kao more than expected).

Fields of papers citing papers by C. J. Kao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. J. Kao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. J. Kao. The network helps show where C. J. Kao may publish in the future.

Co-authorship network of co-authors of C. J. Kao

This figure shows the co-authorship network connecting the top 25 collaborators of C. J. Kao. A scholar is included among the top collaborators of C. J. Kao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. J. Kao. C. J. Kao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Kao, C. J., et al.. (2024). Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode. Nanomaterials. 14(10). 881–881. 1 indexed citations
2.
Sheu, Jinn‐Kong, et al.. (2006). Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation. Applied Physics Letters. 88(20). 8 indexed citations
3.
Sheu, Jinn‐Kong, et al.. (2006). Planar Ultraviolet Photodetectors Formed by Si Implantation into p-GaN. Journal of The Electrochemical Society. 153(9). G799–G799. 3 indexed citations
4.
Kao, C. J., et al.. (2005). Comparison of ZnO metal–oxide–semiconductor field effect transistor and metal–semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(3). 1024–1028. 25 indexed citations
5.
Khanna, Rohit, S. J. Pearton, F. Ren, et al.. (2005). W 2 B -based rectifying contacts to n-GaN. Applied Physics Letters. 87(5). 23 indexed citations
6.
Kao, C. J., C. J. Tun, Jinn‐Kong Sheu, et al.. (2005). Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors. Journal of Applied Physics. 98(6). 18 indexed citations
7.
Khanna, Rohit, S. J. Pearton, F. Ren, et al.. (2005). W2B-based ohmic contacts to n-GaN. Applied Surface Science. 252(5). 1826–1832. 7 indexed citations
8.
Ip, K., Rohit Khanna, D. P. Norton, et al.. (2005). Thermal stability of W2B and W2B5 contacts on ZnO. Applied Surface Science. 252(5). 1846–1853. 9 indexed citations
9.
Han, Sang Youn, Young-Woo Heo, Kwang Hyeon Baik, et al.. (2005). Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes. Japanese Journal of Applied Physics. 44(10R). 7296–7296. 34 indexed citations
10.
Ip, K., Rohit Khanna, D. P. Norton, et al.. (2005). Improved Thermal Stability CrB2 Contacts on ZnO. Japanese Journal of Applied Physics. 44(10R). 7291–7291. 3 indexed citations
11.
12.
Sheu, Jinn‐Kong, Wei‐Chi Lai, Shoou‐Jinn Chang, et al.. (2003). GaN Schottky barrier photodetectors with a low-temperature GaN cap layer. Applied Physics Letters. 82(17). 2913–2915. 43 indexed citations
13.
Sheu, Jinn‐Kong, Wei‐Chi Lai, Yan‐Kuin Su, et al.. (2003). Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer. Journal of Applied Physics. 94(3). 1753–1757. 36 indexed citations
14.
Chang, Shoou‐Jinn, Jinn‐Kong Sheu, Wei‐Chih Lai, et al.. (2003). GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts. IEEE Electron Device Letters. 24(4). 212–214. 89 indexed citations
15.
Sheu, Jinn‐Kong, et al.. (2003). Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure. Solid-State Electronics. 47(5). 873–878. 18 indexed citations
16.
Sheu, Jinn‐Kong, C. J. Kao, Wei‐Chih Lai, et al.. (2003). Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer. Journal of Electronic Materials. 32(5). 400–402. 10 indexed citations
17.
Sheu, Jinn‐Kong, et al.. (2002). Characterization of Si implants in p-type GaN. IEEE Journal of Selected Topics in Quantum Electronics. 8(4). 767–772. 33 indexed citations
18.
Lee, Minjoo Larry, Jinn‐Kong Sheu, C. J. Kao, et al.. (2002). GaN p–n junction diode formed by Si ion implantation into p-GaN. Solid-State Electronics. 46(12). 2179–2183. 16 indexed citations
19.
Sheu, Jinn‐Kong, et al.. (2002). Planar GaN n+–p photodetectors formed by Si implantation into p-GaN. Applied Physics Letters. 81(22). 4263–4265. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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