Eoin P. O’Reilly

12.9k total citations · 1 hit paper
323 papers, 10.2k citations indexed

About

Eoin P. O’Reilly is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Eoin P. O’Reilly has authored 323 papers receiving a total of 10.2k indexed citations (citations by other indexed papers that have themselves been cited), including 260 papers in Atomic and Molecular Physics, and Optics, 202 papers in Electrical and Electronic Engineering and 103 papers in Condensed Matter Physics. Recurrent topics in Eoin P. O’Reilly's work include Semiconductor Quantum Structures and Devices (225 papers), Semiconductor Lasers and Optical Devices (93 papers) and GaN-based semiconductor devices and materials (91 papers). Eoin P. O’Reilly is often cited by papers focused on Semiconductor Quantum Structures and Devices (225 papers), Semiconductor Lasers and Optical Devices (93 papers) and GaN-based semiconductor devices and materials (91 papers). Eoin P. O’Reilly collaborates with scholars based in United Kingdom, Ireland and Germany. Eoin P. O’Reilly's co-authors include J. David Robertson, Andrew J. Lindsay, A. D. Andreev, Stefan Schulz, A. Miguel, A.R. Adams, David A. Faux, J. A. T. Barker, J.R. Downes and Christopher A. Broderick and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Eoin P. O’Reilly

311 papers receiving 9.8k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Electronic and atomic structure of amorphous carbon

1987 1.2k citations Eoin P. O’Reilly et al. Physical review. B, Condensed matter profile →

Peers

Countries citing papers authored by Eoin P. O’Reilly

Since Specialization

Citations

This map shows the geographic impact of Eoin P. O’Reilly's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Eoin P. O’Reilly with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Eoin P. O’Reilly more than expected).

Fields of papers citing papers by Eoin P. O’Reilly

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Eoin P. O’Reilly. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Eoin P. O’Reilly. The network helps show where Eoin P. O’Reilly may publish in the future.

Co-authorship network of co-authors of Eoin P. O’Reilly

This figure shows the co-authorship network connecting the top 25 collaborators of Eoin P. O’Reilly. A scholar is included among the top collaborators of Eoin P. O’Reilly based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Eoin P. O’Reilly. Eoin P. O’Reilly is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Lateral Quantum-Confined Stark Effect for Integrated Quantum Dot Electroabsorption Modulators 2025 ·IEEE Journal of Selected Topics in Quantum Electronics ·Tommy E. Murphy, Christopher A. Broderick, Frank H. Peters, Eoin P. O’Reilly	0
2	Perspective: Theory and simulation of highly mismatched semiconductor alloys using the tight-binding method 2024 ·Journal of Applied Physics ·Christopher A. Broderick, Eoin P. O’Reilly, Stefan Schulz	5
3	Band dispersion, scattering rate, and carrier mobility using the poles of Green’s function for dilute nitride alloys 2024 ·Journal of Applied Physics ·(unknown), Eoin P. O’Reilly, Stephen Fahy	2
4	Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices 2023 ·Journal of Physics D Applied Physics ·(unknown), Eoin P. O’Reilly, Christopher A. Broderick	3
5	Atomistic analysis of band-to-band tunnelling in direct-gap $\mathrm{Ge}_{1-X}\mathrm{Sn}_{x}$ group-IV alloys 2020 ·(unknown), Christopher A. Broderick, Mathieu Luisier, Eoin P. O’Reilly	0
6	Nature of the band gap of Ge:C alloys: insights from hybrid functional density functional theory calculations 2019 ·Semiconductor Science and Technology ·(unknown), Stefan Schulz, Eoin P. O’Reilly	9
7	Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration 2019 ·Scientific Reports ·(unknown), Igor P. Marko, Stefan Schulz, (unknown), Seyed Amir Ghetmiri, Wei Du, Yiyin Zhou, Shui-Qing Yu, Joe Margetis, John Tolle, Eoin P. O’Reilly, Stephen J. Sweeney	42
8	Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: а Quantum Mechanical Consideration 2014 ·Technical University of Denmark, DTU Orbit (Technical University of Denmark, DTU) ·Alexander V. Uskov, Igor E. Protsenko, N. Asger Mortensen, Eoin P. O’Reilly	41
9	Anisotropic electrongfactor as a probe of the electronic structure ofGaBixAs1−x/GaAsepilayers 2014 ·Physical Review B ·Christopher A. Broderick, S. Mazzucato, H. Carrère, T. Amand, (unknown), Alexandre Arnoult, Chantal Fontaine, Ömer Dönmez, Ayşe Erol, Muhammad Usman, Eoin P. O’Reilly, X. Marie	28
10	Internal photoemission from plasmonic nanoparticles: comparison between surface and volume photoelectric effects 2014 ·Nanoscale ·Alexander V. Uskov, Igor E. Protsenko, Р. Ш. Ихсанов, Viktoriia E. Babicheva, Sergei V. Zhukovsky, Andrei V. Lavrinenko, Eoin P. O’Reilly, Hongxing Xu	42
11	Self-consistent Green's function method for dilute nitride conduction band structure 2014 ·Journal of Physics Condensed Matter ·(unknown), Eoin P. O’Reilly, Stephen Fahy	3
12	Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adaptedk⋅pHamiltonian 2013 ·Journal of Physics Condensed Matter ·Oliver Marquardt, Eoin P. O’Reilly, Stefan Schulz	11
13	Built‐in field control in nitride nanostructures operating in the UV 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·A. Miguel, Stefan Schulz, S.B. Healy, Eoin P. O’Reilly	3
14	GaN x As 1-x におけるn型キャリアの合金散乱 2006 ·Physical Review B ·Stephen Fahy, Andrew J. Lindsay, Henni Ouerdane, Eoin P. O’Reilly	5
15	Prospects for ultrafast optical switching based on quantum dot semiconductor optical amplifiers in nonlinear interferometers 2004 ·Conference on Lasers and Electro-Optics ·Alexander V. Uskov, Eoin P. O’Reilly, R.J. Manning, R.P. Webb, D. Cotter, M. Laemmlin, N. N. Ledentsov, D. Bimberg	1
16	Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys 2004 ·Physical Review Letters ·Andrew J. Lindsay, Eoin P. O’Reilly	159
17	Intrinsic limits on electron mobility in disordered dilute nitride semiconductor alloys 2004 ·IEE Proceedings - Optoelectronics ·Stephen Fahy, Andrew J. Lindsay, Eoin P. O’Reilly	17
18	Electronic structure ofInyGa1−yAs1−xNx/GaAsmultiple quantum wells in the dilute-Nregime from pressure andk⋅pstudies 2002 ·Physical review. B, Condensed matter ·Stelios A. Choulis, T. J. C. Hosea, Stanko Tomić, (unknown), A.R. Adams, Eoin P. O’Reilly, B. A. Weinstein, Peter J. Klar	56
19	Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots 2000 ·Physical Review Letters ·P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick, Jonathan J. Finley, J. A. T. Barker, Eoin P. O’Reilly, L. R. Wilson, I. A. Larkin, P. A. Maksym, M. Hopkinson, M. Al-Khafaji, J. P. R. David, A. G. Cullis, G. Hill, Jenny Clark	380
20	Valence band engineering in strained-layer structures 1989 ·Semiconductor Science and Technology ·Eoin P. O’Reilly	318

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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