E. D. Beebe

1.1k total citations
30 papers, 843 citations indexed

About

E. D. Beebe is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, E. D. Beebe has authored 30 papers receiving a total of 843 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 6 papers in Surfaces, Coatings and Films. Recurrent topics in E. D. Beebe's work include Semiconductor Quantum Structures and Devices (12 papers), Semiconductor materials and devices (10 papers) and Photonic and Optical Devices (8 papers). E. D. Beebe is often cited by papers focused on Semiconductor Quantum Structures and Devices (12 papers), Semiconductor materials and devices (10 papers) and Photonic and Optical Devices (8 papers). E. D. Beebe collaborates with scholars based in United States. E. D. Beebe's co-authors include Axel Scherer, H. G. Craighead, R. E. Nahory, M. A. Pollack, M. L. Roukes, J. C. DeWinter, J. P. Harbison, S. J. Allen, R. F. Leheny and Richard J. Martin and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

E. D. Beebe

30 papers receiving 747 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. D. Beebe United States 14 662 634 117 97 59 30 843
H. F. Lockwood United States 17 642 1.0× 736 1.2× 57 0.5× 109 1.1× 63 1.1× 41 914
Yuichi Matsushima Japan 21 870 1.3× 1.2k 1.9× 40 0.3× 81 0.8× 85 1.4× 116 1.3k
P. W. Foy United States 17 757 1.1× 930 1.5× 59 0.5× 167 1.7× 68 1.2× 23 1.1k
O. G. Lorimor United States 13 481 0.7× 473 0.7× 132 1.1× 138 1.4× 47 0.8× 31 638
J.P. Duchemin France 19 895 1.4× 900 1.4× 110 0.9× 155 1.6× 62 1.1× 56 1.1k
M. F. Millea United States 14 323 0.5× 345 0.5× 140 1.2× 62 0.6× 50 0.8× 33 506
T. D. Golding United States 14 387 0.6× 402 0.6× 75 0.6× 191 2.0× 79 1.3× 71 557
K. Tomizawa Japan 16 444 0.7× 611 1.0× 86 0.7× 130 1.3× 62 1.1× 68 735
Jiro Ōsaka Japan 13 498 0.8× 438 0.7× 112 1.0× 158 1.6× 64 1.1× 39 690
C. Moglestue Germany 14 431 0.7× 712 1.1× 75 0.6× 108 1.1× 89 1.5× 43 805

Countries citing papers authored by E. D. Beebe

Since Specialization
Citations

This map shows the geographic impact of E. D. Beebe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. D. Beebe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. D. Beebe more than expected).

Fields of papers citing papers by E. D. Beebe

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. D. Beebe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. D. Beebe. The network helps show where E. D. Beebe may publish in the future.

Co-authorship network of co-authors of E. D. Beebe

This figure shows the co-authorship network connecting the top 25 collaborators of E. D. Beebe. A scholar is included among the top collaborators of E. D. Beebe based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. D. Beebe. E. D. Beebe is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Scherer, Axel, Won-Pyo Hong, Chung-En Zah, et al.. (1991). 1.5 μm InGaAsP/InP vertically coupled semiconductor optical pre-amplifier. Applied Physics Letters. 59(10). 1141–1143. 3 indexed citations
2.
Scherer, Axel, et al.. (1990). Fluoride etch masks for high-resolution pattern transfer. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(1). 28–32. 20 indexed citations
3.
Harbison, J. P., Axel Scherer, D. M. Hwang, L. Nazar, & E. D. Beebe. (1988). MBE Regrowth of AlGaAs on Ion Etched GaAs/AlGaAs Microstructures. MRS Proceedings. 126. 3 indexed citations
4.
Scherer, Axel, E. D. Beebe, & H. G. Craighead. (1987). Summary Abstract: A study of gallium arsenide and aluminum gallium arsenide reactive ion etching parameters. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 5(4). 1604–1605. 3 indexed citations
5.
Roukes, M. L., Axel Scherer, S. J. Allen, et al.. (1987). Quenching of the Hall Effect in a One-Dimensional Wire. Physical Review Letters. 59(26). 3011–3014. 321 indexed citations
6.
Osinski, J.S., Chung-En Zah, R. Bhat, et al.. (1987). Miniature integrated optical beam-splitter in AlGaAs/GaAs ridge waveguides. Electronics Letters. 23(21). 1156–1158. 17 indexed citations
7.
Scherer, Axel, H. G. Craighead, & E. D. Beebe. (1987). Gallium arsenide and aluminum gallium arsenide reactive ion etching in boron trichloride/argon mixtures. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(6). 1599–1605. 27 indexed citations
8.
Scherer, Axel, et al.. (1987). Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage. Applied Physics Letters. 51(25). 2133–2135. 31 indexed citations
9.
Liao, Andrew, B. Tell, R. F. Leheny, et al.. (1984). Electron transport in In0.53Ga0.47As/plasma oxide inversion layers. Applied Physics Letters. 44(3). 344–345. 4 indexed citations
10.
Zemel, A., B. Tell, R. F. Leheny, et al.. (1984). Be-implanted In0.53Ga0.47As diodes with ideal forward current-voltage characteristics. Journal of Applied Physics. 56(6). 1856–1858. 4 indexed citations
11.
Tell, B., R. F. Leheny, Andrew Liao, et al.. (1984). Beryllium implantation doping of InGaAs. Applied Physics Letters. 44(4). 438–440. 25 indexed citations
12.
Tell, B., J. E. Bjorkholm, & E. D. Beebe. (1983). Subnanosecond pulsed laser annealing of Se-implanted InP. Applied Physics Letters. 43(7). 655–657. 7 indexed citations
13.
Leheny, R. F., R. E. Nahory, J. C. DeWinter, Richard J. Martin, & E. D. Beebe. (1981). An integrated PIN/JFET photoreceiver for long wavelength optical systems. 276–279. 4 indexed citations
14.
Leheny, R. F., R. E. Nahory, M. A. Pollack, & E. D. Beebe. (1980). In0.53Ga0.47As PIN-FET Photo-Receiver for 1.0-1.7µm Wavelength Fiber Optic Systems. WC4–WC4. 1 indexed citations
15.
Leheny, R. F., R. E. Nahory, M. A. Pollack, et al.. (1980). Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiver. Electronics Letters. 16(10). 353–355. 71 indexed citations
16.
Leheny, R. F., R. E. Nahory, M. A. Pollack, et al.. (1980). An In0.53Ga0.47As junction field-effect transistor. IEEE Electron Device Letters. 1(6). 110–111. 27 indexed citations
17.
Washington, Morris, R. E. Nahory, M. A. Pollack, & E. D. Beebe. (1978). High-efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm. Applied Physics Letters. 33(10). 854–856. 49 indexed citations
18.
Nahory, R. E., M. A. Pollack, E. D. Beebe, J. C. DeWinter, & M. Ilegems. (1978). ChemInform Abstract: THE LIQUID PHASE EPITAXY OF ALUMINUM GALLIUM ARSENIDE ANTIMONIDE (ALYGA1‐YAS1‐XSBX) AND THE IMPORTANCE OF STRAIN EFFECTS NEAR THE MISCIBILITY GAP. Chemischer Informationsdienst. 9(42). 1 indexed citations
19.
Nahory, R. E., M. A. Pollack, E. D. Beebe, J. C. DeWinter, & R. W. Dixon. (1976). Continuous operation of 1.0-μm-wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbx double-heterostructure injection lasers at room temperature. Applied Physics Letters. 28(1). 19–21. 50 indexed citations
20.
Nahory, R. E., M. A. Pollack, E. D. Beebe, & J. C. DeWinter. (1975). Efficient GaAs1−xSbx/AlyGa1−yAs1−xSbx double heterostructure LED’s in the 1-μm wavelength region. Applied Physics Letters. 27(6). 356–357. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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