P. Valvin

472 total citations
14 papers, 381 citations indexed

About

P. Valvin is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, P. Valvin has authored 14 papers receiving a total of 381 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Electronic, Optical and Magnetic Materials, 7 papers in Materials Chemistry and 6 papers in Condensed Matter Physics. Recurrent topics in P. Valvin's work include Ga2O3 and related materials (7 papers), GaN-based semiconductor devices and materials (6 papers) and Graphene research and applications (3 papers). P. Valvin is often cited by papers focused on Ga2O3 and related materials (7 papers), GaN-based semiconductor devices and materials (6 papers) and Graphene research and applications (3 papers). P. Valvin collaborates with scholars based in France, Germany and Hungary. P. Valvin's co-authors include Pierre Lefèbvre, T. Guillet, Didier Felbacq, A. Lemaı̂tre, J. C. Plenet, Arnaud Brioude, E. Cambril, Kévin Vynck, J. Bellessa and C. Symonds and has published in prestigious journals such as Journal of Applied Physics, Physical Review B and Scientific Reports.

In The Last Decade

P. Valvin

12 papers receiving 372 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Valvin France 8 200 190 144 142 132 14 381
D. Simeonov Switzerland 12 322 1.6× 337 1.8× 174 1.2× 97 0.7× 113 0.9× 21 476
Takamasa Kuroda Japan 8 313 1.6× 269 1.4× 219 1.5× 196 1.4× 214 1.6× 10 618
A. Vertikov United States 9 308 1.5× 264 1.4× 133 0.9× 109 0.8× 105 0.8× 10 425
S. Münch Germany 10 258 1.3× 209 1.1× 218 1.5× 135 1.0× 173 1.3× 14 508
Pengyan Wen China 11 185 0.9× 233 1.2× 144 1.0× 87 0.6× 74 0.6× 35 327
D. D. Solnyshkov Russia 6 199 1.0× 152 0.8× 109 0.8× 109 0.8× 114 0.9× 12 312
M. A. Khan United States 8 94 0.5× 144 0.8× 139 1.0× 99 0.7× 191 1.4× 15 335
B. Gil France 12 283 1.4× 229 1.2× 156 1.1× 168 1.2× 275 2.1× 17 525
S. Moehl France 9 308 1.5× 103 0.5× 217 1.5× 54 0.4× 211 1.6× 16 437
Avinash Rustagi United States 13 228 1.1× 45 0.2× 173 1.2× 59 0.4× 258 2.0× 23 434

Countries citing papers authored by P. Valvin

Since Specialization
Citations

This map shows the geographic impact of P. Valvin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Valvin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Valvin more than expected).

Fields of papers citing papers by P. Valvin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Valvin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Valvin. The network helps show where P. Valvin may publish in the future.

Co-authorship network of co-authors of P. Valvin

This figure shows the co-authorship network connecting the top 25 collaborators of P. Valvin. A scholar is included among the top collaborators of P. Valvin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Valvin. P. Valvin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Desrat, W., M. Moret, P. Valvin, et al.. (2025). Growth of rhombohedral boron nitride crystals using an iron flux. Physical Review Materials. 9(12).
2.
Wang, Mingyuan, Hongying Chen, Adrien Rousseau, et al.. (2025). Layer-by-Layer Connection for Large Area Single Crystal Boron Nitride Multilayer Films. ACS Applied Materials & Interfaces. 17(9). 14660–14669. 1 indexed citations
3.
Shima, Kohei, Tin S. Cheng, Christopher J. Mellor, et al.. (2024). Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride. Scientific Reports. 14(1). 169–169. 7 indexed citations
4.
Sellés, Julien, Christelle Brimont, Guillaume Cassabois, et al.. (2016). Deep-UV nitride-on-silicon microdisk lasers. Scientific Reports. 6(1). 21650–21650. 51 indexed citations
5.
Rosales, Daniel, P. Valvin, Kaddour Lekhal, et al.. (2014). The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures. Superlattices and Microstructures. 76. 9–15. 7 indexed citations
6.
Bellessa, J., C. Symonds, Kévin Vynck, et al.. (2009). Giant Rabi splitting between localized mixed plasmon-exciton states in a two-dimensional array of nanosize metallic disks in an organic semiconductor. Physical Review B. 80(3). 109 indexed citations
7.
Ravotti, Federico, David M. Benoit, Pierre Lefèbvre, et al.. (2007). Time-resolved photoluminescence and optically stimulated luminescence measurements of picosecond-excited SrS:Ce,Sm phosphor. Journal of Applied Physics. 102(12). 8 indexed citations
8.
Hugues, Maxime, M. Richter, J.‐M. Chauveau, et al.. (2007). Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots. Japanese Journal of Applied Physics. 46(4L). L317–L317. 2 indexed citations
9.
Bretagnon, T., Pierre Lefèbvre, P. Valvin, et al.. (2006). Radiative lifetime of a single electron-hole pair inGaN∕AlNquantum dots. Physical Review B. 73(11). 88 indexed citations
10.
Lefèbvre, Pierre, et al.. (2005). Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells. Journal of Crystal Growth. 287(1). 12–15. 20 indexed citations
11.
Franssen, G., Szymon Grzanka, R. Czernecki, et al.. (2005). Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN∕GaN multiple quantum wells on bulk GaN substrates. Journal of Applied Physics. 97(10). 22 indexed citations
12.
Kalliakos, Sokratis, Pierre Lefèbvre, Sandrine Juillaguet, et al.. (2003). Optical properties of GaN/AlN quantum boxes under high photo‐excitation. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2666–2669. 1 indexed citations
13.
Frayssinet, Éric, B. Beaumont, J. P. Faurie, et al.. (2002). Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 7. 65 indexed citations
14.
Valvin, P., et al.. (2000). Transformer coupled plasma dielectric etch for 0.25 μm technologies. Microelectronic Engineering. 50(1-4). 75–80.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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