B. Arnaudov

861 citations

38 papers · 742 indexed · h-index 14

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 24
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 8
Materials Chemistry top 10%
- ZnO doping and properties 10
- Graphene research and applications 5
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 18
Electrical and Electronic Engineering
- Semiconductor materials and devices 5
- Advanced Semiconductor Detectors and Materials 3
Mechanics of Materials
- Metal and Thin Film Mechanics 4

Co-authors: E. Valcheva T. Paskova B. Monemar B. Ḿonemar Ewa M. Goldys H. J. Lü Hiroshi Amano Isamu Akasaki
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Journal of Applied Physics (3 papers)physica status solidi (b) (3 papers)Scientific Reports (2 papers)
Partner nations: Bulgaria Sweden Germany

In The Last Decade

B. Arnaudov

37 papers receiving 717 citations

Peers

Countries citing papers authored by B. Arnaudov

Since Specialization

Citations

This map shows the geographic impact of B. Arnaudov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Arnaudov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Arnaudov more than expected).

Fields of papers citing papers by B. Arnaudov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Arnaudov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Arnaudov. The network helps show where B. Arnaudov may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Arnaudov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Arnaudov Line = papers co-authored together B. Arnaudov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy Journal of Materials Science Materials in Electronics ·Aisling McGinty,V. Donchev,B. Arnaudov,Diego Alonso‐Álvarez,Penka Terziyska	2019	5
2	Large-scale synthesis of free-standing N-doped graphene using microwave plasma Scientific Reports ·N. Bundaleska,J. Henriques,M. V. Abrashev,A.M. Botelho do Rego,Ana M. Ferraria,A. Almeida,F. M. Dias,E. Valcheva,B. Arnaudov,Kush K. Upadhyay,M.F. Montemor,E. Tatarova	2018	100
3	Towards large-scale in free-standing graphene and N-graphene sheets Scientific Reports ·E. Tatarova,Ana Dias,J. Henriques,M. V. Abrashev,N. Bundaleska,Eva Kovačević,Nenad Bundaleski,Uroš Cvelbar,E. Valcheva,B. Arnaudov,A.M. Botelho do Rego,Ana M. Ferraria,Johannes Berndt,Edgar Felizardo,Orlando M.N.D. Teodoro,Hikmat Hikmat,L. L. Alves,B. Gonçalves	2017	81
4	Dilute GaAsN and GaInAsN grown by liquid phase epitaxy Journal of Physics Conference Series ·Margarita Milanova,Heidi Mina,Roumen Kakanakov,P. Vitanov,Z. Alexieva,양일선,B. Arnaudov,J.Z. Zhang,Carlos Barthou,B. Clerjaud	2010	1
5	Evolution of the Raman intensity and the transport properties of SWNTs in various electrochemical doping stages – Exciton effects and functionalization‐induced DOS changes physica status solidi (b) ·P. M. Rafailov,M. Monev,Henry F. Lyle,J.Z. Zhang,B. Arnaudov,C. Thomsen,Urszula Dettlaff‐Weglikowska,Siegmar Roth	2010	2
6	Study of melt-grown GaAsN and InGaAsN epitaxial layers Journal of Physics Conference Series ·P. Vitanov,Margarita Milanova,B. Arnaudov,J.Z. Zhang,양일선,Heidi Mina,Romi Oinam,Guilherme Moreira Martins	2010	2
7	Preparation and characterization of multilayer AlGaAs/GaAs structures for photovoltaic application Journal of Physics Conference Series ·Margarita Milanova,Chikh Mansour,Roumen Kakanakov,B. Arnaudov,J.Z. Zhang,P. Vitanov,Claudia Gryvatz Copquin,양일선	2008	0
8	Electron concentration and mobility profiles in InN layers grown by MBE physica status solidi (a) ·B. Arnaudov,T. Paskova,J.Z. Zhang,B. Ḿonemar,H. J. Lü,W. J. Schaff	2006	4
9	Optical studies on a coherent InGaN/GaN layer Superlattices and Microstructures ·M. R. Correia,S. Pereira,E. Alves,B. Arnaudov	2006	2
10	Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers Journal of Crystal Growth ·T. Paskova,Vanya Darakchieva,T. Paskova,Jens Birch,E. Valcheva,Per O. Å. Persson,B. Arnaudov,Beitz C. R,B. Monemar	2005	59
11	Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices physica status solidi (a) ·T. Paskova,E. Valcheva,Vanya Darakchieva,Jens Birch,A. Kasic,B. Arnaudov,Sukkaneste Tungasmita,B. Ḿonemar	2004	13
12	Free-to-bound radiative recombination in highly conducting InN epitaxial layers Superlattices and Microstructures ·B. Arnaudov,T. Paskova,Björn Magnusson,E. Valcheva,B. Monemar,H. J. Lü,W. J. Schaff,Hiroshi Amano,Isamu Akasaki	2004	7
13	Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels Physical Review B ·B. Arnaudov,J. Lee,T. Paskova,Björn Magnusson,E. Valcheva,B. Monemar,H. J. Lü,W. J. Schaff,Hiroshi Amano,Isamu Akasaki	2004	157
14	Effect of carrier concentration on the microhardness of GaN layers Journal of Materials Science Materials in Electronics ·J.Z. Zhang,B. Arnaudov,J. Lee,B. Monemar,M. Heuken	2003	2
15	Technology and properties of magnetron sputtered CuInSe2 layers Materials Chemistry and Physics ·G. P. Vassilev,Mohammad Walid Azizullah,Audrey Daniel,B. Arnaudov,C. Zarnavalou	2003	16
16	Modeling of the free-electron recombination band in emission spectra of highly conductingn−GaN Physical review. B, Condensed matter ·B. Arnaudov,J. Lee,Ewa M. Goldys,J.Z. Zhang,B. Monemar	2001	54
17	Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’ MRS Internet Journal of Nitride Semiconductor Research ·T. Paskova,Sukkaneste Tungasmita,E. Valcheva,E.B. Svedberg,B. Arnaudov,J.Z. Zhang,Per O. Å. Persson,Anne Henry,R. Beccard,M. Heuken,B. Ḿonemar	2000	5
18	Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy Journal of Applied Physics ·B. Arnaudov,T. Paskova,Ewa M. Goldys,Rositsa Yakimova,J.Z. Zhang,Ivan G. Ivanov,Anne Henry,B. Ḿonemar	1999	30
19	Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence Applied Physics Letters ·Ewa M. Goldys,T. Paskova,Ivan G. Ivanov,B. Arnaudov,B. Ḿonemar	1998	29
20	Electron transport in Sb-doped metalorganic epitaxial GaAs grown at moderate As-rich conditions Journal of Applied Physics ·R. Yakimova,B. Arnaudov,J.Z. Zhang,T. Paskova	1994	2

About B. Arnaudov

B. Arnaudov is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering, having authored 38 papers that have together received 742 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (24 papers), Semiconductor Quantum Structures and Devices (18 papers), ZnO doping and properties (10 papers), Ga2O3 and related materials (8 papers), Graphene research and applications (5 papers), Semiconductor materials and devices (5 papers), Metal and Thin Film Mechanics (4 papers) and Advanced Semiconductor Detectors and Materials (3 papers). The work is most often cited by research in Condensed Matter Physics (430 citations), Electronic, Optical and Magnetic Materials (317 citations), Materials Chemistry (446 citations), Atomic and Molecular Physics, and Optics (208 citations) and Electrical and Electronic Engineering (237 citations). B. Arnaudov has collaborated with scholars based in Bulgaria, Sweden and Germany. Frequent co-authors include E. Valcheva, T. Paskova, B. Monemar, B. Ḿonemar, Ewa M. Goldys, H. J. Lü, Hiroshi Amano, Isamu Akasaki, W. J. Schaff and Björn Magnusson. Their work appears in journals such as Journal of Applied Physics, physica status solidi (b), Scientific Reports, Applied Physics Letters and Journal of Crystal Growth.

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