A. Sedhain

849 total citations
22 papers, 705 citations indexed

About

A. Sedhain is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, A. Sedhain has authored 22 papers receiving a total of 705 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 16 papers in Electronic, Optical and Magnetic Materials and 11 papers in Materials Chemistry. Recurrent topics in A. Sedhain's work include GaN-based semiconductor devices and materials (21 papers), Ga2O3 and related materials (16 papers) and ZnO doping and properties (9 papers). A. Sedhain is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Ga2O3 and related materials (16 papers) and ZnO doping and properties (9 papers). A. Sedhain collaborates with scholars based in United States, Jordan and Singapore. A. Sedhain's co-authors include J. Y. Lin, H. X. Jiang, J. Li, Jianwei Liu, Jun Li, T. M. Al Tahtamouni, B. N. Pantha, James H. Edgar, J. M. Zavada and Neeraj Nepal and has published in prestigious journals such as Applied Physics Letters, The Journal of Physical Chemistry C and Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics.

In The Last Decade

A. Sedhain

22 papers receiving 684 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Sedhain United States 16 515 368 300 197 160 22 705
Wen-Cheng Ke Taiwan 14 281 0.5× 308 0.8× 191 0.6× 197 1.0× 105 0.7× 52 521
B. Arnaudov Bulgaria 14 430 0.8× 446 1.2× 317 1.1× 237 1.2× 128 0.8× 38 742
Shibin Krishna India 16 512 1.0× 600 1.6× 627 2.1× 295 1.5× 205 1.3× 28 911
Huizhao Zhuang China 15 424 0.8× 670 1.8× 504 1.7× 211 1.1× 93 0.6× 102 798
Eun-Kyung Suh South Korea 10 283 0.5× 615 1.7× 346 1.2× 341 1.7× 133 0.8× 15 756
T. W. Kang South Korea 16 266 0.5× 512 1.4× 323 1.1× 404 2.1× 86 0.5× 60 786
Chengshan Xue China 18 525 1.0× 845 2.3× 633 2.1× 283 1.4× 114 0.7× 105 1.0k
Z.Y. Qiao China 14 354 0.7× 493 1.3× 384 1.3× 183 0.9× 143 0.9× 33 731
Jingan Zhou United States 17 475 0.9× 293 0.8× 398 1.3× 427 2.2× 41 0.3× 35 741
M.H. Pu China 14 380 0.7× 396 1.1× 325 1.1× 157 0.8× 118 0.7× 41 670

Countries citing papers authored by A. Sedhain

Since Specialization
Citations

This map shows the geographic impact of A. Sedhain's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Sedhain with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Sedhain more than expected).

Fields of papers citing papers by A. Sedhain

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Sedhain. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Sedhain. The network helps show where A. Sedhain may publish in the future.

Co-authorship network of co-authors of A. Sedhain

This figure shows the co-authorship network connecting the top 25 collaborators of A. Sedhain. A scholar is included among the top collaborators of A. Sedhain based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Sedhain. A. Sedhain is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ugolini, C., et al.. (2012). Formation energy of optically active Er3+ centers in Er doped GaN. Applied Physics Letters. 101(5). 51114–51114. 15 indexed citations
2.
Sedhain, A., J. Y. Lin, & H. X. Jiang. (2012). Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN. Applied Physics Letters. 100(22). 54 indexed citations
3.
Tahtamouni, T. M. Al, et al.. (2011). Beryllium Acceptor Binding Energy in AlN. ThinkTech (Texas Tech University). 10 indexed citations
4.
Li, J., et al.. (2010). Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers. Applied Physics Letters. 96(3). 22 indexed citations
5.
Pantha, B. N., A. Sedhain, J. Li, J. Y. Lin, & H. X. Jiang. (2010). Probing the relationship between structural and optical properties of Si-doped AlN. Applied Physics Letters. 96(13). 17 indexed citations
6.
Sedhain, A., J. Li, J. Y. Lin, & H. X. Jiang. (2010). Nature of deep center emissions in GaN. Applied Physics Letters. 96(15). 86 indexed citations
7.
Nepal, Neeraj, J. M. Zavada, R. Dahal, et al.. (2009). Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers. Applied Physics Letters. 95(2). 17 indexed citations
8.
Pantha, B. N., A. Sedhain, J. Li, J. Y. Lin, & H. X. Jiang. (2009). Electrical and optical properties of p-type InGaN. Applied Physics Letters. 95(26). 62 indexed citations
9.
Sedhain, A., J. Li, J. Y. Lin, & H. X. Jiang. (2009). Probing exciton-phonon interaction in AlN epilayers by photoluminescence. Applied Physics Letters. 95(6). 21 indexed citations
10.
Nepal, Neeraj, J. M. Zavada, Dong‐Seon Lee, et al.. (2009). Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys. Applied Physics Letters. 94(11). 7 indexed citations
11.
Sedhain, A., C. Ugolini, J. Y. Lin, H. X. Jiang, & J. M. Zavada. (2009). Photoluminescence properties of erbium doped InGaN epilayers. Applied Physics Letters. 95(4). 8 indexed citations
12.
Sedhain, A., et al.. (2009). The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates. Applied Physics Letters. 95(26). 54 indexed citations
13.
Sedhain, A., J. Y. Lin, & H. X. Jiang. (2008). Valence band structure of AlN probed by photoluminescence. Applied Physics Letters. 92(4). 7 indexed citations
14.
Sedhain, A., et al.. (2008). Growth and optical properties of a‐plane AlN and Al rich AlN/AlxGa1–xN quantum wells grown on r‐plane sapphire substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1568–1570. 1 indexed citations
15.
Liu, Jianwei, Jun Li, A. Sedhain, J. Y. Lin, & H. X. Jiang. (2008). Structure and Photoluminescence Study of TiO2 Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays. The Journal of Physical Chemistry C. 112(44). 17127–17132. 138 indexed citations
16.
Tahtamouni, T. M. Al, A. Sedhain, J. Y. Lin, & H. X. Jiang. (2008). Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant. Applied Physics Letters. 92(9). 35 indexed citations
17.
Sedhain, A., Neeraj Nepal, M. L. Nakarmi, et al.. (2008). Photoluminescence properties of AlN homoepilayers with different orientations. Applied Physics Letters. 93(4). 27 indexed citations
18.
Ji, Xiaochen, Shu Ping Lau, S. F. Yu, et al.. (2007). Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods. Applied Physics Letters. 90(19). 39 indexed citations
19.
Tahtamouni, T. M. Al, A. Sedhain, J. Y. Lin, & H. X. Jiang. (2007). Growth and photoluminescence studies of a-plane AlN∕AlxGa1−xN quantum wells. Applied Physics Letters. 90(22). 18 indexed citations
20.
Tahtamouni, T. M. Al, A. Sedhain, J. Y. Lin, & H. X. Jiang. (1987). Beryllium Doped p-type GaN Grown by Metal-Organic Chemical Vapor Deposition. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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