Chia-Hsun Wu

513 citations

22 papers · 374 indexed · h-index 13

Co-authors: Edward Yi Chang Quang Ho Luc Yen-Ku Lin Po-Chun Chang Yueh-Chin Lin Heng‐Tung Hsu Jianyou Chen Chang Fu Dee
Topics: GaN-based semiconductor devices and materials (18 papers)Semiconductor materials and devices (16 papers)Ga2O3 and related materials (12 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Transactions on Electron Devices Japanese Journal of Applied Physics IEEE Electron Device Letters
Partner nations: Taiwan Japan Malaysia

In The Last Decade

Chia-Hsun Wu

21 papers receiving 349 citations

Peers

Countries citing papers authored by Chia-Hsun Wu

Since Specialization

Citations

This map shows the geographic impact of Chia-Hsun Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chia-Hsun Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chia-Hsun Wu more than expected).

Fields of papers citing papers by Chia-Hsun Wu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chia-Hsun Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chia-Hsun Wu. The network helps show where Chia-Hsun Wu may publish in the future.

Co-authorship network of co-authors of Chia-Hsun Wu

This figure shows the co-authorship network connecting the top 25 collaborators of Chia-Hsun Wu. A scholar is included among the top collaborators of Chia-Hsun Wu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chia-Hsun Wu. Chia-Hsun Wu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications 2023 ·physica status solidi (a) ·(unknown),(unknown),(unknown),Chia-Hsun Wu,(unknown),Hiroshi Iwai,Edward Yi Chang	4
2	Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications 2023 ·physica status solidi (a) ·(unknown),(unknown),(unknown),Chia-Hsun Wu,(unknown),Hiroshi Iwai,Edward Yi Chang	1
3	Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack 2022 ·IEEE Journal of the Electron Devices Society ·(unknown),(unknown),Chia-Hsun Wu,Chengjun Huang,(unknown),(unknown),Edward Yi Chang	14
4	E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V _th Stability by Field Plate Engineering 2021 ·IEEE Electron Device Letters ·(unknown),(unknown),Chia-Hsun Wu,(unknown),(unknown),(unknown),Quang Ho Luc,Ching-Ting Lee,Daisuke Ueda,Edward Yi Chang	26
5	Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm² Specific On-Resistance for Power Device Applications 2019 ·IEEE Transactions on Electron Devices ·Chia-Hsun Wu,Jianyou Chen,(unknown),(unknown),(unknown),(unknown),Po-Chun Chang,Quang Ho Luc,(unknown),Chang Fu Dee,Azrul Azlan Hamzah,Edward Yi Chang	29
6	Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications 2019 ·Journal of Electronic Materials ·(unknown),Yueh-Chin Lin,(unknown),(unknown),Jin Hwa Lee,Chia-Hsun Wu,(unknown),Heng‐Tung Hsu,(unknown),Kuniyuki Kakushima,Kazuo Tsutsui,Hiroshi Iwai,(unknown),Edward Yi Chang	2
7	InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D 2018 ·IEEE Journal of the Electron Devices Society ·Po-Chun Chang,(unknown),(unknown),Chia-Hsun Wu,Yen-Ku Lin,Yueh-Chin Lin,Simon M. Sze,Edward Yi Chang	10
8	Normally-OFF GaN MIS-HEMT With F⁻ Doped Gate Insulator Using Standard Ion Implantation 2018 ·IEEE Journal of the Electron Devices Society ·Chia-Hsun Wu,(unknown),Quang Ho Luc,(unknown),(unknown),(unknown),Yen-Ku Lin,Po-Chun Chang,(unknown),Edward Yi Chang	39
9	High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications 2018 ·IEEE Electron Device Letters ·Chia-Hsun Wu,(unknown),(unknown),(unknown),(unknown),(unknown),Jianyou Chen,(unknown),(unknown),Yen-Ku Lin,Po-Chun Chang,Quang Ho Luc,Yueh-Chin Lin,Edward Yi Chang	47
10	High-Performance LPCVD-SiN_x/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-$\text{m}{\Omega} \cdot$ cm² for Power Device Applications 2018 ·IEEE Journal of the Electron Devices Society ·(unknown),(unknown),(unknown),Chia-Hsun Wu,(unknown),Edward Yi Chang	22
11	InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an <italic>In-Situ</italic> NH₃Post Remote-Plasma Treatment 2017 ·IEEE Electron Device Letters ·Po-Chun Chang,Quang Ho Luc,(unknown),Yen-Ku Lin,Chia-Hsun Wu,Simon M. Sze,Edward Yi Chang	3
12	High-Performance GaN MOSHEMTs Fabricated With ALD Al₂O₃Dielectric and NBE Gate Recess Technology for High Frequency Power Applications 2017 ·IEEE Electron Device Letters ·Yen-Ku Lin,Shuichi Noda,(unknown),(unknown),Chia-Hsun Wu,Quang Ho Luc,Po-Chun Chang,Heng‐Tung Hsu,Seiji Samukawa,Edward Yi Chang	28
13	AlGaN/GaN MIS-HEMTs With High Quality ALD-Al₂O₃ Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants 2017 ·IEEE Journal of the Electron Devices Society ·(unknown),(unknown),Yueh-Chin Lin,Quang Ho Luc,(unknown),Chia-Hsun Wu,Chang Fu Dee,Burhanuddin Yeop Majlis,Edward Yi Chang	22
14	Enhancement-Mode GaN MIS-HEMTs With LaHfO_xGate Insulator for Power Application 2017 ·IEEE Electron Device Letters ·(unknown),Yu Huang,(unknown),Chia-Hsun Wu,(unknown),Chung‐Ming Chu,(unknown),(unknown),Jin Hwa Lee,Kuniyuki Kakushima,Kazuo Tsutsui,Hiroshi Iwai,Edward Yi Chang	22
15	AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications 2016 ·IEEE Electron Device Letters ·Yen-Ku Lin,Shuichi Noda,(unknown),(unknown),Chia-Hsun Wu,Yuen‐Yee Wong,Quang Ho Luc,Po-Chun Chang,Heng‐Tung Hsu,Seiji Samukawa,Edward Yi Chang	23
16	Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La₂O₃/SiO₂ gate dielectric 2016 ·Japanese Journal of Applied Physics ·Ching‐Hsiang Hsu,(unknown),Yueh-Chin Lin,Heng‐Tung Hsu,(unknown),(unknown),(unknown),Chia-Hsun Wu,(unknown),Jer‐Shen Maa,Hiroshi Iwai,Kuniyuki Kakushima,Edward Yi Chang	12
17	Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures 2016 ·Materials Science in Semiconductor Processing ·(unknown),Chung‐Ming Chu,Yuen‐Yee Wong,(unknown),Yen-Ku Lin,Chia-Hsun Wu,Wei‐I Lee,Edward Yi Chang	25
18	Large Gate Swing and High Threshold Voltage Enhancement-Mode AlGaN/GaN HEMTs Using Low Energy Fluorine Ion Implantation in GaN Layer 2015 ·ECS Meeting Abstracts ·Chia-Hsun Wu,(unknown),Edward Yi Chang	1
19	Effect of Graded Al_xGa_1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates 2012 ·Japanese Journal of Applied Physics ·(unknown),(unknown),Chia-Hsun Wu,Edward Yi Chang,(unknown),(unknown),(unknown),Tien‐Tung Luong,(unknown),(unknown),Chang Fu Dee,Burhanuddin Yeop Majlis	10
20	Effect of Graded Al_xGa_1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates 2012 ·Japanese Journal of Applied Physics ·(unknown),(unknown),Chia-Hsun Wu,Edward Yi Chang,Chien-I Kuo,Jer‐Shen Maa,(unknown),Tien‐Tung Luong,(unknown),(unknown),Chang Fu Dee,Burhanuddin Yeop Majlis	3

About Chia-Hsun Wu

Chia-Hsun Wu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 22 papers that have together received 374 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and devices (16 papers) and Ga2O3 and related materials (12 papers). The work is most often cited by research in Condensed Matter Physics (314 citations), Electronic, Optical and Magnetic Materials (162 citations) and Electrical and Electronic Engineering (271 citations). Chia-Hsun Wu has collaborated with scholars based in Taiwan, Japan and Malaysia. Frequent co-authors include Edward Yi Chang, Quang Ho Luc, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Heng‐Tung Hsu, Jianyou Chen, Chang Fu Dee, Yuen‐Yee Wong and Shuichi Noda. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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