Matt D. Brubaker

752 total citations
42 papers, 601 citations indexed

About

Matt D. Brubaker is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, Matt D. Brubaker has authored 42 papers receiving a total of 601 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 19 papers in Electrical and Electronic Engineering and 19 papers in Biomedical Engineering. Recurrent topics in Matt D. Brubaker's work include GaN-based semiconductor devices and materials (21 papers), Semiconductor materials and devices (13 papers) and Nanowire Synthesis and Applications (12 papers). Matt D. Brubaker is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Semiconductor materials and devices (13 papers) and Nanowire Synthesis and Applications (12 papers). Matt D. Brubaker collaborates with scholars based in United States, China and Japan. Matt D. Brubaker's co-authors include Kris A. Bertness, Norman A. Sanford, Paul T. Blanchard, Alexana Roshko, Todd E. Harvey, Victor M. Bright, Aric W. Sanders, Shannon M. Duff, John B. Schlager and Brian P. Gorman and has published in prestigious journals such as Advanced Materials, Nano Letters and Applied Physics Letters.

In The Last Decade

Matt D. Brubaker

41 papers receiving 586 citations

Peers

Matt D. Brubaker
P. Dogan Germany
J. T. Hsu Taiwan
Sung Hun Wee United States
Thomas Gessmann United States
Gye-Won Hong South Korea
A.S. Segal Russia
Naoki Uno Japan
S. H. Goss United States
P. Dogan Germany
Matt D. Brubaker
Citations per year, relative to Matt D. Brubaker Matt D. Brubaker (= 1×) peers P. Dogan

Countries citing papers authored by Matt D. Brubaker

Since Specialization
Citations

This map shows the geographic impact of Matt D. Brubaker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matt D. Brubaker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matt D. Brubaker more than expected).

Fields of papers citing papers by Matt D. Brubaker

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matt D. Brubaker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matt D. Brubaker. The network helps show where Matt D. Brubaker may publish in the future.

Co-authorship network of co-authors of Matt D. Brubaker

This figure shows the co-authorship network connecting the top 25 collaborators of Matt D. Brubaker. A scholar is included among the top collaborators of Matt D. Brubaker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Matt D. Brubaker. Matt D. Brubaker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Weber, Joel C., Matt D. Brubaker, Todd E. Harvey, et al.. (2023). Semiconductor Thermal and Electrical Properties Decoupled by Localized Phonon Resonances. Advanced Materials. 35(26). e2209779–e2209779. 9 indexed citations
2.
Brubaker, Matt D., et al.. (2023). GaN nanostructures for photonic applications. 7–7. 1 indexed citations
3.
Robins, Lawrence H., Matt D. Brubaker, Ryan C. Tung, & Jason P. Killgore. (2020). Isomorphic contact resonance force microscopy and piezoresponse force microscopy of an AlN thin film: demonstration of a new contact resonance technique. Nano Futures. 4(2). 25003–25003. 2 indexed citations
4.
Brubaker, Matt D., Alexana Roshko, Samuel Berweger, et al.. (2020). Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy . Nanotechnology. 31(42). 424002–424002. 2 indexed citations
5.
Brubaker, Matt D., et al.. (2019). UV LEDs based on p–i–n core–shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy*. Nanotechnology. 30(23). 234001–234001. 30 indexed citations
6.
Blanchard, Paul T., Matt D. Brubaker, Todd E. Harvey, et al.. (2018). Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy. Crystals. 8(4). 178–178. 10 indexed citations
7.
Li, Wenjun, et al.. (2017). GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope. IEEE Electron Device Letters. 39(2). 184–187. 32 indexed citations
8.
Roshko, Alexana, Matt D. Brubaker, Paul T. Blanchard, et al.. (2016). Comparison of convergent beam electron diffraction and annular bright field atomic imaging for GaN polarity determination. Journal of materials research/Pratt's guide to venture capital sources. 32(5). 936–946. 12 indexed citations
9.
Brubaker, Matt D., Shannon M. Duff, Todd E. Harvey, et al.. (2015). Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy. Crystal Growth & Design. 16(2). 596–604. 70 indexed citations
10.
Roshko, Alexana, Roy H. Geiss, John B. Schlager, et al.. (2014). Characterization of InGaN quantum disks in GaN nanowires. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 505–508. 1 indexed citations
11.
Bertness, Kris A., Matt D. Brubaker, Todd E. Harvey, et al.. (2014). In situ temperature measurements for selective epitaxy of GaN nanowires. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 590–593. 4 indexed citations
12.
Sanford, Norman A., Paul T. Blanchard, Matt D. Brubaker, et al.. (2014). Laser‐assisted atom probe tomography of MBE grown GaN nanowire heterostructures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 608–612. 16 indexed citations
13.
Diercks, David R., et al.. (2013). Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects. Journal of Applied Physics. 114(18). 68 indexed citations
14.
Blanchard, Paul T., Aric W. Sanders, Matt D. Brubaker, et al.. (2012). Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires. Nanotechnology. 23(36). 365203–365203. 3 indexed citations
15.
Brubaker, Matt D.. (2012). Growth and characterization of gallium nitride nanowire LEDs for application as on-chip optical interconnects. CU Scholar (University of Colorado Boulder). 1 indexed citations
16.
17.
Brubaker, Matt D., et al.. (2001). Deposition and thermal processing of ferroelectric thin films with the primaxx 2f platform. Integrated ferroelectrics. 36(1-4). 305–312. 4 indexed citations
18.
Rużyłło, Jerzy, et al.. (1999). <title>Gate dielectric monitoring using noncontact electrical characterization</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3884. 198–206. 1 indexed citations
19.
Brubaker, Matt D., et al.. (1998). Surface dopant concentration monitoring using noncontact surface charge profiling. Journal of Applied Physics. 83(4). 2297–2300. 14 indexed citations
20.
Brubaker, Matt D., et al.. (1998). Non-contact monitoring of electrical characteristics of silicon surface and near-surface region. 250–254. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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