Antoine Tiberj

1.3k total citations
40 papers, 915 citations indexed

About

Antoine Tiberj is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Antoine Tiberj has authored 40 papers receiving a total of 915 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Materials Chemistry, 24 papers in Electrical and Electronic Engineering and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Antoine Tiberj's work include Graphene research and applications (21 papers), Diamond and Carbon-based Materials Research (10 papers) and Silicon Carbide Semiconductor Technologies (10 papers). Antoine Tiberj is often cited by papers focused on Graphene research and applications (21 papers), Diamond and Carbon-based Materials Research (10 papers) and Silicon Carbide Semiconductor Technologies (10 papers). Antoine Tiberj collaborates with scholars based in France, Spain and United Kingdom. Antoine Tiberj's co-authors include Jean Camassel, Philippe Godignon, Nicolas Camara, Jean-Roch Huntzinger, J. R. Huntzinger, N. Mestres, J. Camassel, Matthieu Paillet, Rositsa Yakimova and Gemma Rius and has published in prestigious journals such as Nature Communications, Physical review. B, Condensed matter and ACS Nano.

In The Last Decade

Antoine Tiberj

39 papers receiving 903 citations

Peers

Antoine Tiberj
Jong Duk Lee South Korea
Zhi Jiang China
Xue Liu China
Udo Schwalke Germany
S. Suzuki Japan
Jong Duk Lee South Korea
Antoine Tiberj
Citations per year, relative to Antoine Tiberj Antoine Tiberj (= 1×) peers Jong Duk Lee

Countries citing papers authored by Antoine Tiberj

Since Specialization
Citations

This map shows the geographic impact of Antoine Tiberj's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Antoine Tiberj with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Antoine Tiberj more than expected).

Fields of papers citing papers by Antoine Tiberj

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Antoine Tiberj. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Antoine Tiberj. The network helps show where Antoine Tiberj may publish in the future.

Co-authorship network of co-authors of Antoine Tiberj

This figure shows the co-authorship network connecting the top 25 collaborators of Antoine Tiberj. A scholar is included among the top collaborators of Antoine Tiberj based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Antoine Tiberj. Antoine Tiberj is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Li, Ji, Yuan Zhang, Chao Liu, et al.. (2021). 3.4% Solar‐to‐Ammonia Efficiency from Nitrate Using Fe Single Atomic Catalyst Supported on MoS2 Nanosheets. Advanced Functional Materials. 32(18). 123 indexed citations
3.
Shubina, T. V., W. Desrat, M. Moret, et al.. (2019). InSe as a case between 3D and 2D layered crystals for excitons. Nature Communications. 10(1). 3479–3479. 52 indexed citations
4.
Moret, M., Antoine Tiberj, W. Desrat, & O. Briot. (2018). Properties of MAPbI3 perovskite layers grown with HCl additions. Superlattices and Microstructures. 120. 136–140. 1 indexed citations
5.
Moret, M., et al.. (2017). Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu(In1xGax)Se2solar cells. Solar Energy Materials and Solar Cells. 174. 418–422. 15 indexed citations
6.
Jouault, B., S. Charpentier, D. Massarotti, et al.. (2016). Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC. Journal of Superconductivity and Novel Magnetism. 29(5). 1145–1150. 5 indexed citations
7.
Tiberj, Antoine, M. Rubio-Roy, Matthieu Paillet, et al.. (2013). Reversible optical doping of graphene. Scientific Reports. 3(1). 2355–2355. 78 indexed citations
8.
Parret, Romain, Matthieu Paillet, Jean-Roch Huntzinger, et al.. (2012). In Situ Raman Probing of Graphene over a Broad Doping Range upon Rubidium Vapor Exposure. ACS Nano. 7(1). 165–173. 33 indexed citations
9.
Tiberj, Antoine, Jean-Roch Huntzinger, Jean Camassel, et al.. (2011). Multiscale investigation of graphene layers on 6H-SiC(000-1). Nanoscale Research Letters. 6(1). 171–171. 14 indexed citations
10.
Camara, Nicolas, B. Jouault, Antoine Tiberj, et al.. (2011). Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates. Nanoscale Research Letters. 6(1). 141–141. 3 indexed citations
11.
Tiberj, Antoine, Nicolas Camara, Philippe Godignon, & Jean Camassel. (2011). Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC. Nanoscale Research Letters. 6(1). 478–478. 19 indexed citations
12.
Jouault, B., Niels Olsen Saraiva Câmara, W. Desrat, et al.. (2010). Probing the electrical anisotropy of multilayer graphene on the Si face of6H-SiC. Physical Review B. 82(8). 26 indexed citations
13.
Eid, Jessica, et al.. (2009). Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT. Materials science forum. 615-617. 45–48. 2 indexed citations
14.
Tauk, R., J. Łusakowski, W. Knap, et al.. (2007). Low electron mobility of field-effect transistor determined by modulated magnetoresistance. Journal of Applied Physics. 102(10). 7 indexed citations
15.
Sakowicz, M., R. Tauk, J. Łusakowski, et al.. (2006). Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors. Journal of Applied Physics. 100(11). 10 indexed citations
16.
Lorenzini, P., Z. Bougrioua, Antoine Tiberj, et al.. (2005). Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕GaN heterostructures. Applied Physics Letters. 87(23). 18 indexed citations
17.
Tiberj, Antoine, Vincent Paillard, Nicolas Daval, et al.. (2004). Stress Metrology : The challenge for the next generation of engineered wafers. MRS Proceedings. 809. 5 indexed citations
18.
Taliercio, T. & Antoine Tiberj. (2003). Strain effects in device processing of silicon-on-insulator materials. Applied Surface Science. 212-213. 742–748. 8 indexed citations
19.
Tiberj, Antoine, et al.. (2002). Process-induced strain in silicon-on-insulator materials. Journal of Physics Condensed Matter. 14(48). 13411–13416. 13 indexed citations
20.
Sermage, B., et al.. (2000). In-plane propagation of excitonic cavity polaritons. Physical review. B, Condensed matter. 61(11). 7233–7236. 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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