V. Drouot

497 total citations
20 papers, 406 citations indexed

About

V. Drouot is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, V. Drouot has authored 20 papers receiving a total of 406 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 17 papers in Electrical and Electronic Engineering and 4 papers in Materials Chemistry. Recurrent topics in V. Drouot's work include Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (9 papers) and Advanced Semiconductor Detectors and Materials (7 papers). V. Drouot is often cited by papers focused on Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (9 papers) and Advanced Semiconductor Detectors and Materials (7 papers). V. Drouot collaborates with scholars based in France, United Kingdom and United States. V. Drouot's co-authors include B. Lambert, S. Loualiche, G. Hollinger, M. Gendry, Cristina Santinelli, Alain Le Corre, Nicolas Bertru, D. A. Ritchie, Anne Ponchet and D. Lacombe and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

V. Drouot

18 papers receiving 398 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Drouot France 12 385 293 116 51 23 20 406
C. Coriasso Italy 11 227 0.6× 283 1.0× 68 0.6× 37 0.7× 11 0.5× 48 349
C. Lacelle Canada 10 360 0.9× 284 1.0× 88 0.8× 43 0.8× 37 1.6× 35 382
P.A. Claxton United Kingdom 15 543 1.4× 396 1.4× 104 0.9× 52 1.0× 84 3.7× 40 584
M. W. Goodwin United States 17 332 0.9× 652 2.2× 85 0.7× 57 1.1× 25 1.1× 43 741
T. Watanabe Japan 12 342 0.9× 295 1.0× 80 0.7× 79 1.5× 49 2.1× 49 405
C.F. Schaus United States 12 426 1.1× 535 1.8× 58 0.5× 23 0.5× 22 1.0× 43 572
W. Kuebart Germany 11 256 0.7× 427 1.5× 99 0.9× 119 2.3× 11 0.5× 25 482
J. Selders Germany 9 366 1.0× 367 1.3× 95 0.8× 47 0.9× 31 1.3× 18 443
V. I. Belitsky Germany 11 278 0.7× 152 0.5× 125 1.1× 51 1.0× 33 1.4× 34 342
J.S. Roberts United Kingdom 12 340 0.9× 420 1.4× 78 0.7× 30 0.6× 18 0.8× 48 487

Countries citing papers authored by V. Drouot

Since Specialization
Citations

This map shows the geographic impact of V. Drouot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Drouot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Drouot more than expected).

Fields of papers citing papers by V. Drouot

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Drouot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Drouot. The network helps show where V. Drouot may publish in the future.

Co-authorship network of co-authors of V. Drouot

This figure shows the co-authorship network connecting the top 25 collaborators of V. Drouot. A scholar is included among the top collaborators of V. Drouot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Drouot. V. Drouot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Jacob, Guy, Marie‐Paule Besland, V. Drouot, et al.. (2002). Evaluation of InP Epi-ready wafers for epitaxial growth. 267–270.
4.
Bertru, Nicolas, V. Drouot, Cyril Paranthoën, et al.. (2000). Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (113)B InP substrates. Journal of Crystal Growth. 209(4). 661–665. 9 indexed citations
5.
Drouot, V., et al.. (1999). Self-organized InAs islands on InP(311)B substrates emitting around 1.55μm. Journal of Crystal Growth. 201-202. 1180–1185. 20 indexed citations
6.
Bertru, Nicolas, V. Drouot, B. Lambert, et al.. (1999). Wavelength tuning of InAs quantum dots grown on (311)B InP. Applied Physics Letters. 74(22). 3356–3358. 69 indexed citations
7.
Lacombe, D., Anne Ponchet, V. Drouot, et al.. (1999). Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (001) and (113)B InP at low lattice mismatch. Journal of Crystal Growth. 201-202. 252–255. 5 indexed citations
8.
Lacombe, D., Anne Ponchet, V. Drouot, et al.. (1999). Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate. Applied Physics Letters. 74(12). 1680–1682. 16 indexed citations
9.
Folliot, Hervé, S. Loualiche, B. Lambert, V. Drouot, & Alain Le Corre. (1998). Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP. Physical review. B, Condensed matter. 58(16). 10700–10704. 32 indexed citations
10.
Lambert, B., Alain Le Corre, V. Drouot, H. L’Haridon, & S. Loualiche. (1998). High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5 -. Semiconductor Science and Technology. 13(1). 143–145. 18 indexed citations
11.
Cooper, L. J., N. K. Patel, V. Drouot, et al.. (1998). Resistance resonance induced by electron-hole hybridization in a strongly coupled InAs/GaSb/AlSb heterostructure. Physical review. B, Condensed matter. 57(19). 11915–11918. 57 indexed citations
12.
Drouot, V., B. Lambert, D. Lemoine, et al.. (1997). Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100). Applied Physics Letters. 71(19). 2818–2820. 23 indexed citations
13.
Brown, Susan J., P. D. Rose, E. H. Linfield, et al.. (1997). In situ STM characterisation of Ga+ focused ion beam interactions with MBE grown GaAs(100). Journal of Crystal Growth. 175-176. 346–351. 2 indexed citations
14.
Garro, N., R. T. Phillips, V. Drouot, et al.. (1997). Resonant Rayleigh scattering by excitonic states laterally confined in the interface roughnessof GaAs/AlxGa1−xAs single quantum wells. Physical review. B, Condensed matter. 55(20). 13752–13760. 23 indexed citations
15.
Drouot, V., M. Gendry, Cristina Santinelli, et al.. (1996). Design and growth investigations of strained In/sub x/Ga/sub 1-x/As/InAlAs/InP heterostructures for high electron mobility transistor application. IEEE Transactions on Electron Devices. 43(9). 1326–1335. 18 indexed citations
16.
17.
Drouot, V., M. Gendry, Cristina Santinelli, et al.. (1995). High electron mobility in pseudomorphic modulation-doped In0.75Ga0.25As/InAlAs heterostructures achieved with growth interruptions. Journal of Applied Physics. 77(4). 1810–1812. 16 indexed citations
18.
Tardy, J., M. Gendry, V. Drouot, et al.. (1993). A new encapsulation method of InP during post implantation annealing. Applied Surface Science. 69(1-4). 407–411. 2 indexed citations
19.
Gendry, M., V. Drouot, Cristina Santinelli, & G. Hollinger. (1992). Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy. Applied Physics Letters. 60(18). 2249–2251. 41 indexed citations
20.
Gendry, M., et al.. (1992). Growth modes and relaxation mechanisms of strained InGaAs layers grown on InP(001). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(4). 1829–1834. 43 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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