Toru Ujihara

4.6k total citations
233 papers, 3.6k citations indexed

About

Toru Ujihara is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Toru Ujihara has authored 233 papers receiving a total of 3.6k indexed citations (citations by other indexed papers that have themselves been cited), including 144 papers in Electrical and Electronic Engineering, 67 papers in Atomic and Molecular Physics, and Optics and 59 papers in Materials Chemistry. Recurrent topics in Toru Ujihara's work include Silicon Carbide Semiconductor Technologies (78 papers), Silicon and Solar Cell Technologies (61 papers) and Thin-Film Transistor Technologies (44 papers). Toru Ujihara is often cited by papers focused on Silicon Carbide Semiconductor Technologies (78 papers), Silicon and Solar Cell Technologies (61 papers) and Thin-Film Transistor Technologies (44 papers). Toru Ujihara collaborates with scholars based in Japan, Germany and Canada. Toru Ujihara's co-authors include Shunta Harada, Gen Sazaki, Kazuo Nakajima, Noritaka Usami, Kozo Fujiwara, Miho Tagawa, Kazuaki Seki, Y. Yamamoto, Yoshikazu Takeda and Ryugo Tero and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Toru Ujihara

229 papers receiving 3.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Toru Ujihara Japan 32 2.1k 1.1k 871 669 513 233 3.6k
N. Q. Vinh United States 31 2.0k 1.0× 1.4k 1.2× 1.2k 1.3× 763 1.1× 249 0.5× 161 3.3k
Satoshi Uda Japan 27 1.2k 0.6× 2.0k 1.8× 986 1.1× 778 1.2× 765 1.5× 218 3.3k
W. A. Shelton United States 30 827 0.4× 1.3k 1.1× 882 1.0× 212 0.3× 564 1.1× 115 2.7k
Jin Li China 33 1.3k 0.6× 3.2k 2.8× 900 1.0× 464 0.7× 336 0.7× 237 4.4k
Naoki Kishimoto Japan 30 795 0.4× 1.5k 1.3× 1.1k 1.3× 1.1k 1.6× 568 1.1× 314 3.8k
Iwao Ohdomari Japan 34 2.8k 1.3× 1.5k 1.4× 1.7k 1.9× 895 1.3× 210 0.4× 232 4.4k
Gerhard Müller Germany 32 2.7k 1.3× 1.5k 1.3× 423 0.5× 1.0k 1.6× 244 0.5× 177 3.8k
Yukio Sato Japan 30 877 0.4× 1.5k 1.4× 756 0.9× 363 0.5× 605 1.2× 221 3.3k
M. Seibt Germany 33 2.5k 1.2× 1.8k 1.6× 1.6k 1.8× 451 0.7× 451 0.9× 203 3.9k
M. Rothschild United States 29 1.3k 0.6× 943 0.8× 680 0.8× 1.1k 1.7× 393 0.8× 172 2.8k

Countries citing papers authored by Toru Ujihara

Since Specialization
Citations

This map shows the geographic impact of Toru Ujihara's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Toru Ujihara with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Toru Ujihara more than expected).

Fields of papers citing papers by Toru Ujihara

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Toru Ujihara. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Toru Ujihara. The network helps show where Toru Ujihara may publish in the future.

Co-authorship network of co-authors of Toru Ujihara

This figure shows the co-authorship network connecting the top 25 collaborators of Toru Ujihara. A scholar is included among the top collaborators of Toru Ujihara based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Toru Ujihara. Toru Ujihara is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Miura, Hitoshi, et al.. (2025). Numerical Simulation of the Formation Process of Overhanging Structures in SiC Solution Growth to Suppress Solvent Inclusion. Crystal Growth & Design. 25(14). 5256–5264. 1 indexed citations
2.
Sonoda, Tsutomu, Tokio Takahashi, Hisashi Yamada, et al.. (2025). Modeling and analysis of undoped GaN grown in a horizontal laminar flow MOCVD reactor. Materials Science in Semiconductor Processing. 188. 109258–109258. 1 indexed citations
3.
Nakanishi, Yuki, et al.. (2024). Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth. Journal of Crystal Growth. 631. 127609–127609. 2 indexed citations
4.
Kutsukake, Kentaro, et al.. (2023). Machine Learning for Semiconductor Process Simulation Described by Coupled Partial Differential Equations. Advanced Theory and Simulations. 6(9). 3 indexed citations
5.
Niinomi, Hiromasa, Teruki Sugiyama, An-Chieh Cheng, et al.. (2023). Correction to “Chiral Optical Force Generated by a Superchiral Near-Field of a Plasmonic Triangle Trimer as Origin of Giant Bias in Chiral Nucleation: A simulation study”. The Journal of Physical Chemistry C. 127(31). 15679–15683. 1 indexed citations
6.
Zhu, Can, et al.. (2023). Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC. Crystal Growth & Design. 23(2). 1023–1032. 14 indexed citations
10.
Onda, Shoichi, et al.. (2020). Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy. Japanese Journal of Applied Physics. 60(SA). SAAD03–SAAD03. 1 indexed citations
11.
Tanaka, Atsushi, Shunta Harada, Kenji Hanada, et al.. (2019). Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method. physica status solidi (b). 257(4). 7 indexed citations
12.
Ujihara, Toru, Can Zhu, Kentaro Kutsukake, et al.. (2019). Optimization of growth condition of SiC solution growth by the predication model constructed by machine learning for larger diameter. The Japan Society of Applied Physics. 1 indexed citations
13.
Zhu, Can, et al.. (2019). Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal. CrystEngComm. 21(47). 7260–7265. 17 indexed citations
14.
Dong, Xinyu, Takahiko Kawaguchi, Makoto Kuwahara, et al.. (2018). Development of angle-resolved spectroscopy system of electrons emitted from a surface with negative electron affinity state. Review of Scientific Instruments. 89(7). 73103–73103. 8 indexed citations
15.
Yamamoto, Takuya, Yasunori Okano, Toru Ujihara, & S. Dost. (2017). Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation. Journal of Crystal Growth. 470. 75–88. 33 indexed citations
16.
Senguttuvan, N., Masahiko Hiratani, Toru Ujihara, et al.. (2015). Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC. Materials science forum. 821-823. 35–38. 5 indexed citations
17.
Tabuchi, Masao, et al.. (2013). Critical current density and grain boundary property of BaFe2(As,P)2 thin films. Physica C Superconductivity. 494. 181–184. 28 indexed citations
18.
Yamamoto, Naoto, Masahiro Yamamoto, T. Nakanishi, et al.. (2007). Initial Emittance Measurements for Polarized Electron Gun with NEA-GaAs Type Photocathode. AIP conference proceedings. 915. 1071–1076. 4 indexed citations
20.
Ujihara, Toru, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, & Kazuo Nakajima. (2002). Evaluation of the diffusion coefficients in liquid GaGe binary alloys using a novel method based on Fick’s first law. Journal of Non-Crystalline Solids. 312-314. 196–202. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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