Mitsuaki Kaneko

917 total citations
53 papers, 709 citations indexed

About

Mitsuaki Kaneko is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Mitsuaki Kaneko has authored 53 papers receiving a total of 709 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 10 papers in Condensed Matter Physics. Recurrent topics in Mitsuaki Kaneko's work include Silicon Carbide Semiconductor Technologies (40 papers), Semiconductor materials and devices (33 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Mitsuaki Kaneko is often cited by papers focused on Silicon Carbide Semiconductor Technologies (40 papers), Semiconductor materials and devices (33 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Mitsuaki Kaneko collaborates with scholars based in Japan and Switzerland. Mitsuaki Kaneko's co-authors include Tsunenobu Kimoto, H Iwasaki, K Hayashi, Masashi Nishida, Kyoko Kasahara, Masashi Nakajima, Masahiro Hara, Hajime Tanaka, Jun Suda and Takuma Kobayashi and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Mitsuaki Kaneko

49 papers receiving 686 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mitsuaki Kaneko Japan 12 342 152 141 104 76 53 709
I. A. Morozov Russia 14 220 0.6× 75 0.5× 77 0.5× 72 0.7× 18 0.2× 86 499
Kohei Matsuura Japan 13 28 0.1× 26 0.2× 34 0.2× 139 1.3× 205 2.7× 45 682
Mingxing Wang China 18 93 0.3× 352 2.3× 54 0.4× 24 0.2× 229 3.0× 46 790
Szu-Yu Chen Taiwan 13 50 0.1× 167 1.1× 10 0.1× 21 0.2× 14 0.2× 22 532
Lih Feng Cheow Singapore 18 218 0.6× 512 3.4× 65 0.5× 30 0.3× 11 0.1× 43 1.1k
Yanyun Ying China 11 50 0.1× 96 0.6× 17 0.1× 53 0.5× 2 0.0× 25 574
Shuhei Fukuoka Japan 11 32 0.1× 132 0.9× 47 0.3× 37 0.4× 58 0.8× 41 502
Kathy J. Snow United States 10 100 0.3× 200 1.3× 51 0.4× 72 0.7× 8 0.1× 13 471
Zhongqiu Xie China 18 59 0.2× 536 3.5× 37 0.3× 39 0.4× 22 0.3× 41 950

Countries citing papers authored by Mitsuaki Kaneko

Since Specialization
Citations

This map shows the geographic impact of Mitsuaki Kaneko's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mitsuaki Kaneko with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mitsuaki Kaneko more than expected).

Fields of papers citing papers by Mitsuaki Kaneko

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mitsuaki Kaneko. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mitsuaki Kaneko. The network helps show where Mitsuaki Kaneko may publish in the future.

Co-authorship network of co-authors of Mitsuaki Kaneko

This figure shows the co-authorship network connecting the top 25 collaborators of Mitsuaki Kaneko. A scholar is included among the top collaborators of Mitsuaki Kaneko based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mitsuaki Kaneko. Mitsuaki Kaneko is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shima, Akio, et al.. (2025). Modeling of SiC(0001) n-Channel MOSFETs Based on Comprehensive Understanding of Electron Scattering Mechanism. IEEE Transactions on Electron Devices. 72(12). 6494–6502.
2.
Kaneko, Mitsuaki, et al.. (2025). First-order SPICE modeling of SiC p- and n-channel side-gate JFETs toward high-temperature complementary JFET ICs. SHILAP Revista de lepidopterología. 1(2).
3.
Tanaka, Hajime, et al.. (2024). Origin of hole mobility anisotropy in 4H-SiC. Journal of Applied Physics. 135(7). 3 indexed citations
4.
Kaneko, Mitsuaki, et al.. (2024). Impact ionization coefficients along 4H-SiC 〈 11 2 ¯ 0 〉 in a wide temperature range. Japanese Journal of Applied Physics. 63(11). 118004–118004. 1 indexed citations
5.
Kaneko, Mitsuaki, et al.. (2024). High electron mobility in heavily sulfur-doped 4H-SiC. Journal of Applied Physics. 135(20). 2 indexed citations
6.
Kaneko, Mitsuaki, et al.. (2024). Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC. Journal of Applied Physics. 136(9). 4 indexed citations
7.
Kaneko, Mitsuaki, et al.. (2023). Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface. APL Materials. 11(9). 4 indexed citations
8.
Hara, Masahiro, Mitsuaki Kaneko, & Tsunenobu Kimoto. (2023). Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC. Applied Physics Express. 16(2). 21003–21003. 7 indexed citations
9.
Hara, Masahiro, et al.. (2023). Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces. Applied Physics Express. 16(3). 31005–31005. 5 indexed citations
10.
Tanaka, Hajime, et al.. (2023). Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H‐SiC. physica status solidi (b). 260(10). 10 indexed citations
11.
Kaneko, Mitsuaki, et al.. (2023). Physical properties of sulfur double donors in 4H-SiC introduced by ion implantation. Japanese Journal of Applied Physics. 62(1). 10908–10908. 3 indexed citations
12.
Kaneko, Mitsuaki, et al.. (2022). Mobility enhancement in heavily doped 4H-SiC (0001), (1120), and (1100) MOSFETs via an oxidation-minimizing process. Applied Physics Express. 15(7). 71001–71001. 16 indexed citations
13.
Hara, Masahiro, Mitsuaki Kaneko, & Tsunenobu Kimoto. (2021). Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures. Japanese Journal of Applied Physics. 60(SB). SBBD14–SBBD14. 12 indexed citations
14.
Kaneko, Mitsuaki, et al.. (2021). Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC. Japanese Journal of Applied Physics. 60(6). 68001–68001. 4 indexed citations
15.
Nakajima, Masashi, et al.. (2021). Lateral spreads of ion-implanted Al and P atoms in silicon carbide. Japanese Journal of Applied Physics. 60(5). 51001–51001. 7 indexed citations
16.
Kaneko, Mitsuaki. (2019). Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate. 1 indexed citations
17.
Kaneko, Mitsuaki, et al.. (2018). Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies. Japanese Journal of Applied Physics. 57(7). 70309–70309. 2 indexed citations
18.
Kaneko, Mitsuaki, Tsunenobu Kimoto, & Jun Suda. (2016). Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE. physica status solidi (b). 253(5). 814–818. 2 indexed citations
19.
Nishida, Masashi, Kyoko Kasahara, Mitsuaki Kaneko, H Iwasaki, & K Hayashi. (1985). [Establishment of a new human endometrial adenocarcinoma cell line, Ishikawa cells, containing estrogen and progesterone receptors].. PubMed. 37(7). 1103–11. 316 indexed citations
20.
Kido, C, et al.. (1970). [Angiography of primary liver cancer].. PubMed. 25(11). 2228–37. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by I. A. Morozov Breakdown of academic impact, for papers by Kohei Matsuura Breakdown of academic impact, for papers by Mingxing Wang Breakdown of academic impact, for papers by Szu-Yu Chen Breakdown of academic impact, for papers by Lih Feng Cheow Breakdown of academic impact, for papers by Yanyun Ying Breakdown of academic impact, for papers by Shuhei Fukuoka Breakdown of academic impact, for papers by Kathy J. Snow Breakdown of academic impact, for papers by Zhongqiu Xie
Rankless by CCL
2026