Pengpeng Ren

735 total citations
87 papers, 476 citations indexed

About

Pengpeng Ren is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, Pengpeng Ren has authored 87 papers receiving a total of 476 indexed citations (citations by other indexed papers that have themselves been cited), including 85 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 4 papers in Hardware and Architecture. Recurrent topics in Pengpeng Ren's work include Semiconductor materials and devices (68 papers), Advancements in Semiconductor Devices and Circuit Design (55 papers) and Integrated Circuits and Semiconductor Failure Analysis (29 papers). Pengpeng Ren is often cited by papers focused on Semiconductor materials and devices (68 papers), Advancements in Semiconductor Devices and Circuit Design (55 papers) and Integrated Circuits and Semiconductor Failure Analysis (29 papers). Pengpeng Ren collaborates with scholars based in China, United Kingdom and United States. Pengpeng Ren's co-authors include Runsheng Wang, Zhigang Ji, Ru Huang, Ru Huang, Hao Peng, Shaofeng Guo, Zhuoqing Yu, Jianping Wang, Yangyuan Wang and Changze Liu and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Pengpeng Ren

71 papers receiving 459 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Pengpeng Ren China 14 431 87 28 17 16 87 476
Simon Thomann Germany 10 314 0.7× 62 0.7× 32 1.1× 11 0.6× 25 1.6× 37 324
Om Prakash India 11 412 1.0× 100 1.1× 25 0.9× 17 1.0× 18 1.1× 37 437
Zijian Zhao United States 11 284 0.7× 93 1.1× 26 0.9× 17 1.0× 36 2.3× 39 320
Gicheol Shin South Korea 9 269 0.6× 71 0.8× 47 1.7× 42 2.5× 13 0.8× 17 299
Aniket Gupta India 11 296 0.7× 69 0.8× 8 0.3× 31 1.8× 12 0.8× 26 310
H. Oda Japan 12 466 1.1× 28 0.3× 30 1.1× 51 3.0× 7 0.4× 70 489
Toshiharu Nagumo Japan 12 532 1.2× 20 0.2× 32 1.1× 35 2.1× 7 0.4× 38 549
Sumitha George United States 12 506 1.2× 118 1.4× 46 1.6× 45 2.6× 20 1.3× 34 524
N. Planes France 17 781 1.8× 39 0.4× 51 1.8× 56 3.3× 8 0.5× 56 804
Shivendra Singh Parihar India 7 197 0.5× 25 0.3× 21 0.8× 32 1.9× 12 0.8× 28 220

Countries citing papers authored by Pengpeng Ren

Since Specialization
Citations

This map shows the geographic impact of Pengpeng Ren's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Pengpeng Ren with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Pengpeng Ren more than expected).

Fields of papers citing papers by Pengpeng Ren

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Pengpeng Ren. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Pengpeng Ren. The network helps show where Pengpeng Ren may publish in the future.

Co-authorship network of co-authors of Pengpeng Ren

This figure shows the co-authorship network connecting the top 25 collaborators of Pengpeng Ren. A scholar is included among the top collaborators of Pengpeng Ren based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Pengpeng Ren. Pengpeng Ren is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Yong, et al.. (2025). Bit Line Hammering in Si-Based VCT DRAM: A New Security Challenge and Its Mitigation. IEEE Electron Device Letters. 46(5). 733–736. 1 indexed citations
2.
Wu, Maokun, Xuepei Wang, Yishan Wu, et al.. (2025). Charge balance effect on the phase stability and reliability in doped HfO2-ZrO2 superlattice films for further DRAM capacitors: A first-principles study. Applied Physics Letters. 126(10). 1 indexed citations
3.
Wu, Maokun, Xuepei Wang, Yishan Wu, et al.. (2025). Wide range work function modulation of TiN for complementary field effect transistor: A first-principles study. SHILAP Revista de lepidopterología. 1(1). 1 indexed citations
4.
5.
6.
Wang, Shuying, et al.. (2025). Multiscale Thermal Simulation for GAAFET With First-Principles-Based Boltzmann Transport Equation. IEEE Transactions on Electron Devices. 72(9). 4700–4707. 1 indexed citations
7.
8.
Ren, Pengpeng, et al.. (2024). Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM. 1–6. 6 indexed citations
9.
Wu, Yishan, Maokun Wu, Xuepei Wang, et al.. (2024). Step-Recovery With Multi-Pulse Test (SRMPT) Characterization Technique for the Understanding of Border Traps in Ferroelectric Capacitors. IEEE Electron Device Letters. 45(10). 1993–1996.
10.
Xiao, Yu, et al.. (2024). A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation. P75.TX–1. 1 indexed citations
11.
Liu, Yong, Pengpeng Ren, Maokun Wu, et al.. (2024). Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node—Part I: Defect-Based Statistical Compact Model. IEEE Transactions on Electron Devices. 71(8). 4462–4468. 1 indexed citations
12.
Wu, Maokun, Xuepei Wang, Yishan Wu, et al.. (2024). Insights into the ferroelectric orthorhombic phase formation in doped HfO2 thin films. Journal of Applied Physics. 136(12). 3 indexed citations
13.
Liu, Yong, Pengpeng Ren, Maokun Wu, et al.. (2024). Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node—Part II: PBTI Aging and Optimization. IEEE Transactions on Electron Devices. 71(8). 4469–4475. 3 indexed citations
14.
Wang, Xuepei, Yuchun Li, Maokun Wu, et al.. (2023). Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With High Endurance and Remnant Polarization. IEEE Electron Device Letters. 44(6). 1011–1014. 19 indexed citations
15.
Ye, Jinfeng, et al.. (2023). Fast Aging-Aware Timing Analysis Framework With Temporal–Spatial Graph Neural Network. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 43(6). 1862–1871. 1 indexed citations
16.
Ren, Pengpeng, Junjie Wu, Shuying Wang, et al.. (2023). On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects. IEEE Transactions on Electron Devices. 70(9). 4518–4524. 12 indexed citations
17.
Sun, Zixuan, Pengpeng Ren, Zhigang Ji, et al.. (2023). A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology. IEEE Transactions on Electron Devices. 71(1). 206–212. 3 indexed citations
18.
Liu, Xiang, Pengpeng Ren, Hai‐Bao Chen, et al.. (2022). Equiprobability-Based Local Response Surface Method for High-Sigma Yield Estimation With Both High Accuracy and Efficiency. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 42(4). 1346–1350.
19.
Ren, Pengpeng, Lining Zhang, Xiong Li, et al.. (2022). Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition. IEEE Transactions on Electron Devices. 69(12). 6669–6675. 2 indexed citations
20.
Ren, Pengpeng, Feng Hao, Runsheng Wang, et al.. (2021). A Probability-Based Strong Physical Unclonable Function With Strong Machine Learning Immunity. IEEE Electron Device Letters. 43(1). 138–141. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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