Srinivasa Banna

718 total citations
28 papers, 546 citations indexed

About

Srinivasa Banna is a scholar working on Electrical and Electronic Engineering, Automotive Engineering and Hardware and Architecture. According to data from OpenAlex, Srinivasa Banna has authored 28 papers receiving a total of 546 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 2 papers in Automotive Engineering and 2 papers in Hardware and Architecture. Recurrent topics in Srinivasa Banna's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and 3D IC and TSV technologies (8 papers). Srinivasa Banna is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and 3D IC and TSV technologies (8 papers). Srinivasa Banna collaborates with scholars based in United States, Hong Kong and Germany. Srinivasa Banna's co-authors include Deepak Kumar Nayak, Sung Kyu Lim, Sandeep Kumar Samal, Mansun Chan, P.C.H. Chan, P.K. Ko, Jiajun Shi, C.T. Nguyen, Zoran Krivokapić and Rohit Galatage and has published in prestigious journals such as IEEE Transactions on Electron Devices, Rare & Special e-Zone (The Hong Kong University of Science and Technology) and Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft).

In The Last Decade

Srinivasa Banna

27 papers receiving 515 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Srinivasa Banna United States 11 528 107 49 42 35 28 546
Jiajun Shi United States 9 330 0.6× 91 0.9× 61 1.2× 13 0.3× 23 0.7× 22 369
Sumitha George United States 12 506 1.0× 118 1.1× 31 0.6× 46 1.1× 45 1.3× 34 524
Sunghyun Park South Korea 8 395 0.7× 46 0.4× 25 0.5× 65 1.5× 102 2.9× 15 444
Ling-Wu Yang Taiwan 13 470 0.9× 110 1.0× 138 2.8× 23 0.5× 49 1.4× 39 499
H. McAdams United States 10 415 0.8× 189 1.8× 22 0.4× 75 1.8× 69 2.0× 23 468
T. Hamamoto Japan 13 574 1.1× 32 0.3× 82 1.7× 147 3.5× 53 1.5× 46 633
Gicheol Shin South Korea 9 269 0.5× 71 0.7× 12 0.2× 47 1.1× 42 1.2× 17 299
Yasser Sherazi Belgium 10 516 1.0× 35 0.3× 15 0.3× 47 1.1× 86 2.5× 26 549
O. Tsuchiya Japan 8 353 0.7× 52 0.5× 75 1.5× 21 0.5× 10 0.3× 15 380
J. Ku Taiwan 10 304 0.6× 67 0.6× 57 1.2× 16 0.4× 24 0.7× 26 315

Countries citing papers authored by Srinivasa Banna

Since Specialization
Citations

This map shows the geographic impact of Srinivasa Banna's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Srinivasa Banna with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Srinivasa Banna more than expected).

Fields of papers citing papers by Srinivasa Banna

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Srinivasa Banna. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Srinivasa Banna. The network helps show where Srinivasa Banna may publish in the future.

Co-authorship network of co-authors of Srinivasa Banna

This figure shows the co-authorship network connecting the top 25 collaborators of Srinivasa Banna. A scholar is included among the top collaborators of Srinivasa Banna based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Srinivasa Banna. Srinivasa Banna is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bahr, Bichoy, Yanbo He, Zoran Krivokapić, Srinivasa Banna, & Dana Weinstein. (2018). 32GHz resonant-fin transistors in 14nm FinFET technology. 36. 348–350. 15 indexed citations
2.
Krivokapić, Zoran, Rohit Galatage, Ali Razavieh, et al.. (2017). 14nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 15.1.1–15.1.4. 183 indexed citations
3.
Krivokapić, Zoran, et al.. (2017). NCFET: Opportunities & challenges for advanced technology nodes. 1–3. 11 indexed citations
4.
Samal, Sandeep Kumar, et al.. (2016). How to Cope with Slow Transistors in the Top-tier of Monolithic 3D ICs. 320–325. 7 indexed citations
5.
Samal, Sandeep Kumar, et al.. (2016). Monolithic 3D IC vs. TSV-based 3D IC in 14nm FinFET technology. 1–2. 55 indexed citations
6.
Shi, Jiajun, Deepak Kumar Nayak, Srinivasa Banna, et al.. (2016). A 14nm FinFET transistor-level 3D partitioning design to enable high-performance and low-cost monolithic 3D IC. 2.5.1–2.5.4. 26 indexed citations
7.
Shi, Jiajun, et al.. (2016). On the Design of Ultra-High Density 14nm Finfet Based Transistor-Level Monolithic 3D ICs. 449–454. 20 indexed citations
8.
Yuan, Lei, et al.. (2015). Design and process technology co-optimization with SADP BEOL in sub-10nm SRAM bitcell. 11.2.1–11.2.4. 6 indexed citations
9.
10.
Nayak, Deepak Kumar, Srinivasa Banna, Sandeep Kumar Samal, & Sung Kyu Lim. (2015). Power, performance, and cost comparisons of monolithic 3D ICs and TSV-based 3D ICs. 1–2. 30 indexed citations
11.
Banna, Srinivasa, Sunil Bhardwaj, Mayank Gupta, et al.. (2011). Offset buried metal gate vertical floating body memory technology with excellent retention time for DRAM application. 172–173. 6 indexed citations
12.
Lee, Seung Hwan, Donghee Son, Srinivasa Banna, et al.. (2010). Vertical double gate Z-RAM technology with remarkable low voltage operation for DRAM application. 163–164. 8 indexed citations
13.
Ershov, M., et al.. (2006). Optimization of Substrate Doping for Back-Gate Control in SOI T-RAM Memory Technology. 215–216. 2 indexed citations
14.
Yang, Kemeng, et al.. (2006). Optimization of Nanoscale Thyristors on SOI for High-Performance High-Density Memories. 113–114. 9 indexed citations
15.
Banna, Srinivasa, et al.. (2002). On buried-oxide effects in SOI lateral bipolar transistors. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 8. 22–25.
16.
Banna, Srinivasa, P.C.H. Chan, & P.K. Ko. (2002). On buried-oxide effects in SOI lateral bipolar transistors. 29–30. 1 indexed citations
17.
Banna, Srinivasa, et al.. (1998). A unified understanding on fully-depleted SOI NMOSFET hot-carrier degradation. IEEE Transactions on Electron Devices. 45(1). 206–212. 8 indexed citations
18.
Banna, Srinivasa, et al.. (1997). Fully depleted CMOS/SOI device design guidelines for low power applications. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 301–306. 1 indexed citations
19.
Banna, Srinivasa, et al.. (1996). Impact of scaling silicon film thickness on hot carrier effects in thin film fully depleted SOI MOSFETs. Rare & Special e-Zone (The Hong Kong University of Science and Technology). edl. 112–113. 4 indexed citations
20.
Banna, Srinivasa, P.C.H. Chan, Mansun Chan, & P.K. Ko. (1996). A physically based compact device model for fully depleted and nearly fully depleted SOI MOSFET. IEEE Transactions on Electron Devices. 43(11). 1914–1923. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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