A. Paskaleva

2.3k total citations
128 papers, 1.7k citations indexed

About

A. Paskaleva is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A. Paskaleva has authored 128 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 123 papers in Electrical and Electronic Engineering, 39 papers in Materials Chemistry and 25 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A. Paskaleva's work include Semiconductor materials and devices (112 papers), Ferroelectric and Negative Capacitance Devices (49 papers) and Advancements in Semiconductor Devices and Circuit Design (37 papers). A. Paskaleva is often cited by papers focused on Semiconductor materials and devices (112 papers), Ferroelectric and Negative Capacitance Devices (49 papers) and Advancements in Semiconductor Devices and Circuit Design (37 papers). A. Paskaleva collaborates with scholars based in Bulgaria, Germany and Czechia. A. Paskaleva's co-authors include E. Atanassova, D. Spassov, Anton J. Bauer, M. Lemberger, N. Novkovski, Konstantin Kostov, Stefan Zürcher, G. Tyuliev, Wenke Weinreich and Mathias Rommel and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

A. Paskaleva

122 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Paskaleva Bulgaria 22 1.5k 649 329 215 83 128 1.7k
Valeri Afanas’ev Belgium 26 1.3k 0.8× 782 1.2× 188 0.6× 225 1.0× 70 0.8× 101 1.6k
YewChung Sermon Wu Taiwan 18 801 0.5× 644 1.0× 239 0.7× 212 1.0× 123 1.5× 120 1.3k
J.H. Klootwijk Netherlands 19 1.3k 0.9× 564 0.9× 296 0.9× 186 0.9× 53 0.6× 65 1.5k
D. Spassov Bulgaria 17 862 0.6× 442 0.7× 241 0.7× 81 0.4× 53 0.6× 74 1.1k
Robert K. Grubbs United States 18 970 0.6× 963 1.5× 300 0.9× 169 0.8× 78 0.9× 31 1.5k
Ji‐Myon Lee South Korea 19 713 0.5× 704 1.1× 335 1.0× 211 1.0× 68 0.8× 78 1.2k
Yu-Long Jiang China 18 937 0.6× 420 0.6× 172 0.5× 388 1.8× 70 0.8× 101 1.2k
J. R. LaRoche United States 18 992 0.6× 830 1.3× 419 1.3× 262 1.2× 75 0.9× 45 1.4k
C. Chaneliere France 9 769 0.5× 460 0.7× 210 0.6× 111 0.5× 34 0.4× 12 908
K. Xiong United Kingdom 20 1.4k 0.9× 1.1k 1.7× 254 0.8× 206 1.0× 63 0.8× 38 1.8k

Countries citing papers authored by A. Paskaleva

Since Specialization
Citations

This map shows the geographic impact of A. Paskaleva's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Paskaleva with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Paskaleva more than expected).

Fields of papers citing papers by A. Paskaleva

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Paskaleva. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Paskaleva. The network helps show where A. Paskaleva may publish in the future.

Co-authorship network of co-authors of A. Paskaleva

This figure shows the co-authorship network connecting the top 25 collaborators of A. Paskaleva. A scholar is included among the top collaborators of A. Paskaleva based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Paskaleva. A. Paskaleva is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Veljković, Sandra, Nikola Mitrović, S. Djoric-Veljković, et al.. (2024). A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress. Micromachines. 15(4). 503–503. 8 indexed citations
2.
Djoric-Veljković, S., V. Davidović, Sandra Veljković, et al.. (2024). Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors. Micromachines. 16(1). 27–27. 1 indexed citations
3.
Veljković, Sandra, et al.. (2023). Self-heating of stressed VDMOS devices under specific operating conditions. Microelectronics Reliability. 150. 115213–115213. 5 indexed citations
4.
Galluzzi, Armando, Krastyo Buchkov, B. Blagoev, et al.. (2023). Strong Magneto-Optical Kerr Effects in Ni-Doped ZnO Nanolaminate Structures Obtained by Atomic Layer Deposition. Materials. 16(19). 6547–6547.
5.
Spassov, D., et al.. (2023). Electric characterization of transition metal (Co, Ni, Fe) doped ZnO thin layers prepared by atomic layer deposition. Journal of Physics Conference Series. 2436(1). 12014–12014. 1 indexed citations
6.
Blagoev, B., K. Starbova, Ivalina Avramova, et al.. (2023). A Novel Approach to Obtaining Metal Oxide HAR Nanostructures by Electrospinning and ALD. Materials. 16(23). 7489–7489. 1 indexed citations
7.
Veljković, Sandra, et al.. (2023). Effects of self-heating and NBTI-induced stress on p-channel power VDMOSFETs. Book of Abstracts. 7 indexed citations
8.
Spassov, D. & A. Paskaleva. (2023). Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks. Nanomaterials. 13(17). 2456–2456. 8 indexed citations
9.
Paskaleva, A., B. Blagoev, Penka Terziyska, et al.. (2021). Structural, morphological and optical properties of atomic layer deposited transition metal (Co, Ni or Fe)- doped ZnO layers. Journal of Materials Science Materials in Electronics. 32(6). 7162–7175. 9 indexed citations
10.
Hudec, Boris, A. Paskaleva, Peter Jančovič, et al.. (2014). Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface. Thin Solid Films. 563. 10–14. 15 indexed citations
11.
Atanassova, E., N. Stojadinović, D. Spassov, I. Manić, & A. Paskaleva. (2013). 純及びAl軽ドープTa 2 O 5 スタックにおける時間依存絶縁破壊. Semiconductor Science and Technology. 28(5). 1–9. 15 indexed citations
12.
Paskaleva, A., et al.. (2011). Verilog-A model of a high-k HfO 2 -Ta 2 O 5 capacitor. International Conference Mixed Design of Integrated Circuits and Systems. 470–475. 2 indexed citations
13.
Spassov, D., et al.. (2009). N 2 OおよびNH 3 窒化Si上のTiドープTa 2 O 5 の電気的性質. Semiconductor Science and Technology. 24(7). 1–10. 2 indexed citations
14.
Spassov, D., et al.. (2009). Electrical behaviour of Ti-doped Ta2O5on N2O- and NH3-nitrided Si. Semiconductor Science and Technology. 24(7). 75024–75024. 13 indexed citations
15.
Atanassova, E., et al.. (2009). High-k HfO2–Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity. Microelectronic Engineering. 87(4). 668–676. 24 indexed citations
16.
Novkovski, N., et al.. (2008). Constant current tress characteristics of Ti doped Ta<inf>2</inf>O<inf>5</inf> on silicon. 579–582. 1 indexed citations
17.
Rommel, Mathias, M. Lemberger, Tobias Erlbacher, et al.. (2008). Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics. Applied Physics Letters. 92(25). 72 indexed citations
18.
Atanassova, E., M. Kalitzova, Giuseppe Zollo, et al.. (2003). High temperature-induced crystallization in tantalum pentoxide layers and its influence on the electrical properties. Thin Solid Films. 426(1-2). 191–199. 59 indexed citations
19.
Paskaleva, A., et al.. (2003). Density and spatial distribution of MERIE-like plasma induced defects in SiO2. physica status solidi (a). 199(2). 243–249.
20.
Atanassova, E. & A. Paskaleva. (1996). Mobility degradation of inversion layer carriers due to MERIE-type plasma action. Solid-State Electronics. 39(7). 1033–1041. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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