E. Atanassova

2.7k citations

165 papers · 2.2k indexed · h-index 24

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
Electronic, Optical and Magnetic Materials top 5%
- Copper Interconnects and Reliability

Papers in

Electrical and Electronic Engineering 134
- Semiconductor materials and devices 126
- Advancements in Semiconductor Devices and Circuit Design 36
- Ferroelectric and Negative Capacitance Devices 36
- Integrated Circuits and Semiconductor Failure Analysis 26
- Advanced Memory and Neural Computing 13
Electronic, Optical and Magnetic Materials 38
- Copper Interconnects and Reliability 36

Co-authors: A. Paskaleva D. Spassov N. Novkovski T. Dimitrova J. Koprinarova Konstantin Kostov Р. В. Конакова V. F. Mitin
Journals: Microelectronics Reliability (18 papers)Thin Solid Films (14 papers)Applied Surface Science (12 papers)Journal of Physics D Applied Physics (12 papers)Semiconductor Science and Technology (11 papers)
Partner nations: Bulgaria Czechia North Macedonia

In The Last Decade

E. Atanassova

157 papers receiving 2.1k citations

Peers

Countries citing papers authored by E. Atanassova

Since Specialization

Citations

This map shows the geographic impact of E. Atanassova's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Atanassova with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Atanassova more than expected).

Fields of papers citing papers by E. Atanassova

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Atanassova. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Atanassova. The network helps show where E. Atanassova may publish in the future.

Co-authors

The 25 scholars most cited alongside E. Atanassova, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Atanassova Line = papers co-authored together E. Atanassova links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	純及びAl軽ドープTa 2 O 5 スタックにおける時間依存絶縁破壊 Semiconductor Science and Technology ·E. Atanassova, N. Stojadinović, D. Spassov, I. Manić, A. Paskaleva	2013	15
2	Doped Ta2O5 and mixed HfO2–Ta2O5 films for dynamic memories applications at the nanoscale Microelectronics Reliability ·E. Atanassova, A. Paskaleva, D. Spassov	2011	12
3	N 2 OおよびNH 3 窒化Si上のTiドープTa 2 O 5 の電気的性質 Semiconductor Science and Technology ·D. Spassov, E. Atanassova, A. Paskaleva, N. Novkovski, Fei Wong	2009	2
4	Electrical behaviour of Ti-doped Ta₂O₅on N₂O- and NH₃-nitrided Si Semiconductor Science and Technology ·D. Spassov, E. Atanassova, A. Paskaleva, N. Novkovski, Fei Wong	2009	13
5	High-k HfO2–Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity Microelectronic Engineering ·E. Atanassova, 苟园, D. Spassov, A. Paskaleva	2009	24
6	高仕事関数の金属とTa 2 O 5 高k誘電体の間の接触での電荷トラッピング効果 Journal of Physics D Applied Physics ·N. Novkovski, Fei Wong, E. Atanassova	2008	22
7	Constant current tress characteristics of Ti doped Ta<inf>2</inf>O<inf>5</inf> on silicon Fei Wong, N. Novkovski, A. Paskaleva, E. Atanassova	2008	1
8	Electrical characteristics of Ti-doped Ta2O5 stacked capacitors Thin Solid Films ·E. Atanassova, D. Spassov, A. Paskaleva, 苟园, J. Koprinarova	2008	29
9	Wear‐out and breakdown of thermally grown Ta₂O₅ insulating films on plasma oxynitrided Si substrates physica status solidi (a) ·N. Novkovski, E. Atanassova	2006	2
10	Thermal Ta/sub 2/O/sub 5/ - alternative to SiO/sub 2/ for high density dynamic memories E. Atanassova, D. Spassov	2003	1
11	High temperature-induced crystallization in tantalum pentoxide layers and its influence on the electrical properties Thin Solid Films ·E. Atanassova, M. Kalitzova, Giuseppe Zollo, A. Paskaleva, A. Peeva, 苟园, G. Vitali	2003	59
12	Density and spatial distribution of MERIE-like plasma induced defects in SiO2 physica status solidi (a) ·A. Paskaleva, N. Novkovski, E. Atanassova, 齊藤洸介	2003	0
13	Stress-induced leakage currents in thin Ta/sub 2/O/sub 5/ films 齊藤洸介, N. Novkovski, E. Atanassova	2003	0
14	Thin RF sputtered and thermal Ta2O5 on Si for high density DRAM application Microelectronics Reliability ·E. Atanassova	1999	67
15	X-ray photoelectron spectroscopy of thermal thin Ta2O5 films on Si Applied Surface Science ·E. Atanassova, D. Spassov	1998	149
16	Mobility degradation of inversion layer carriers due to MERIE-type plasma action Solid-State Electronics ·E. Atanassova, A. Paskaleva	1996	6
17	Non-Invasive Electrogastrography Part 1: Correlation between the Gastric Electrical Activity in Dogs with Implanted and Cutaneous Electrodes Archives of Physiology and Biochemistry ·E. Atanassova, Peichen WU, Ivan Dotsinsky, Ivaylo Christov, О.В. Штырина	1995	9
18	Non-Invasive Electrogastrography Part 2 Human Electrogastrogram Archives of Physiology and Biochemistry ·E. Atanassova, Peichen WU, Ivan Dotsinsky, Ivaylo Christov, О.В. Штырина	1995	7
19	Thin thermal SiO2 after NH3 or N2O plasma action under plasma-enhanced chemical vapor deposition conditions Thin Solid Films ·T. Dimitrova, E. Atanassova, G. Beshkov, Iara Maria Castro	1994	10
20	Histochemical study of the myenteric plexus following gastric resection on dogs. PubMed ·Feijie Zheng, E. Atanassova	1982	2

About E. Atanassova

E. Atanassova is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Ceramics and Composites, Gastroenterology and Materials Chemistry, having authored 165 papers that have together received 2.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (126 papers), Advancements in Semiconductor Devices and Circuit Design (36 papers), Ferroelectric and Negative Capacitance Devices (36 papers), Copper Interconnects and Reliability (36 papers), Integrated Circuits and Semiconductor Failure Analysis (26 papers), Silicon Nanostructures and Photoluminescence (20 papers), Semiconductor materials and interfaces (17 papers) and Advanced Memory and Neural Computing (13 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.8k citations), Electronic, Optical and Magnetic Materials (503 citations), Materials Chemistry (877 citations), Ceramics and Composites (74 citations) and Bioengineering (72 citations). E. Atanassova has collaborated with scholars based in Bulgaria, Czechia and North Macedonia. Frequent co-authors include A. Paskaleva, D. Spassov, N. Novkovski, T. Dimitrova, J. Koprinarova, Konstantin Kostov, Р. В. Конакова, V. F. Mitin, G. Tyuliev and K. Arshak. Their work appears in journals such as Microelectronics Reliability, Thin Solid Films, Applied Surface Science, Journal of Physics D Applied Physics and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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