Keiji Ikeda

1.3k total citations
79 papers, 1.1k citations indexed

About

Keiji Ikeda is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Keiji Ikeda has authored 79 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 78 papers in Electrical and Electronic Engineering, 21 papers in Biomedical Engineering and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Keiji Ikeda's work include Semiconductor materials and devices (70 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers) and Nanowire Synthesis and Applications (20 papers). Keiji Ikeda is often cited by papers focused on Semiconductor materials and devices (70 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers) and Nanowire Synthesis and Applications (20 papers). Keiji Ikeda collaborates with scholars based in Japan, South Korea and Yemen. Keiji Ikeda's co-authors include Shinichi Takagi, Naoharu Sugiyama, Tatsuro Maeda, Yoshimi Yamashita, Tsutomu Tezuka, Noriyuki Taoka, Shu Nakaharai, Tetsuo Tezuka, Nobuyoshi Saito and Yoshihiko Moriyama and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Keiji Ikeda

77 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Keiji Ikeda Japan 17 1.0k 283 266 243 116 79 1.1k
Guangrui Xia Canada 15 666 0.7× 192 0.7× 208 0.8× 131 0.5× 84 0.7× 76 763
Henry P. Lee United States 10 531 0.5× 366 1.3× 321 1.2× 224 0.9× 55 0.5× 30 774
Per‐Erik Hellström Sweden 16 725 0.7× 204 0.7× 154 0.6× 168 0.7× 41 0.4× 104 811
Shanthi Iyer United States 17 421 0.4× 469 1.7× 224 0.8× 371 1.5× 151 1.3× 62 687
Yongke Sun United States 5 429 0.4× 145 0.5× 192 0.7× 238 1.0× 52 0.4× 6 602
Marta De Luca Italy 17 369 0.4× 354 1.3× 420 1.6× 398 1.6× 70 0.6× 44 729
Tomislav Suligoj Croatia 15 651 0.6× 161 0.6× 252 0.9× 94 0.4× 111 1.0× 126 839
L. Dehimi Algeria 21 909 0.9× 385 1.4× 379 1.4× 214 0.9× 169 1.5× 83 1.1k
Y. Nabetani Japan 16 639 0.6× 444 1.6× 416 1.6× 61 0.3× 68 0.6× 35 771
Anil W. Dey Sweden 16 949 0.9× 448 1.6× 357 1.3× 879 3.6× 41 0.4× 18 1.2k

Countries citing papers authored by Keiji Ikeda

Since Specialization
Citations

This map shows the geographic impact of Keiji Ikeda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Keiji Ikeda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Keiji Ikeda more than expected).

Fields of papers citing papers by Keiji Ikeda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Keiji Ikeda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Keiji Ikeda. The network helps show where Keiji Ikeda may publish in the future.

Co-authorship network of co-authors of Keiji Ikeda

This figure shows the co-authorship network connecting the top 25 collaborators of Keiji Ikeda. A scholar is included among the top collaborators of Keiji Ikeda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Keiji Ikeda. Keiji Ikeda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Fujii, Shosuke, Keiji Ikeda, Shau‐Feng Chang, et al.. (2024). Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture. 1–4. 3 indexed citations
3.
Saito, Nobuyoshi, et al.. (2019). High mobility (>30 cm 2  V −1  s −1 ) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μ m −1 off-state leakage current. Japanese Journal of Applied Physics. 58(SB). SBBJ07–SBBJ07. 12 indexed citations
4.
Saito, Nobuyoshi, et al.. (2019). Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect. Japanese Journal of Applied Physics. 58(SB). SBBJ03–SBBJ03. 8 indexed citations
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Ikeda, Keiji. (2013). Enhancement of Hole Mobility and Cut-off Characteristics of Strained Ge Nanowire pMOSFETs by using Plasma Oxidized GeOx Inter-layer for Gate Stack. Symposium on VLSI Technology. 7 indexed citations
8.
Irisawa, Toshifumi, M. Oda, Y. Moriyama, et al.. (2013). Demonstration of InGaAs/Ge dual channel CMOS inverters with high electron and hole mobility using staked 3D integration. Symposium on VLSI Technology. 16 indexed citations
9.
Kamata, Yoshiki, Yuuichi Kamimuta, Keiji Ikeda, et al.. (2013). Superior cut-off characteristics of L g =40nm W fin =7nm poly Ge junctionless Tri-gate FET for stacked 3D circuits integration. Symposium on VLSI Technology. 10 indexed citations
10.
Irisawa, Toshifumi, M. Oda, Y. Moriyama, et al.. (2013). 3D integration of high mobility InGaAs nFETs and Ge pFETs for ultra low power and high performance CMOS. 51. 1–2. 3 indexed citations
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Moriyama, Yoshihiko, Yuuichi Kamimuta, Keiji Ikeda, & Tsutomu Tezuka. (2011). Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs. Solid-State Electronics. 60(1). 89–92. 6 indexed citations
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Moriyama, Yoshihiko, Yuuichi Kamimuta, Keiji Ikeda, & Tsutomu Tezuka. (2011). Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors. Thin Solid Films. 520(8). 3236–3239. 7 indexed citations
15.
Kamata, Yoshiki, Keiji Ikeda, Yuuichi Kamimuta, & Tsutomu Tezuka. (2010). High-k/Ge p- &amp; n-MISFETs with strontium germanide interlayer for EOT scalable CMIS application. 211–212. 20 indexed citations
16.
Ikeda, Keiji, et al.. (2009). Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation. IEEE Transactions on Electron Devices. 56(4). 627–633. 10 indexed citations
17.
Ikeda, Keiji, T. Miyashita, T. Kubo, et al.. (2008). Advanced junction profile design scheme by low-temperature millisecond annealing and co-implant for high performance CMOS. 188–189. 2 indexed citations
18.
Yamashita, Yoshimi, Akira Endoh, Keiji Ikeda, et al.. (2005). Effect of thermal annealing on 120-nm-T-shaped-Ti∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(3). 895–899. 3 indexed citations
19.
Satoh, Yasuo, Keiji Ikeda, Satoshi Sugahara, & Masakiyo Matsumura. (2000). Atomic-Layer Epitaxy of Silicon on (100) Surface. Japanese Journal of Applied Physics. 39(10R). 5732–5732. 3 indexed citations
20.
Nakayama, Hiroshi, Keiji Ikeda, Keiko Furihata, et al.. (1980). Produced by a Strain of UnidentifiedActinomycetessp.. Agricultural and Biological Chemistry. 44(7). 1671–1672. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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