Haiwen Xu

429 total citations
46 papers, 296 citations indexed

About

Haiwen Xu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Instrumentation. According to data from OpenAlex, Haiwen Xu has authored 46 papers receiving a total of 296 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 9 papers in Instrumentation. Recurrent topics in Haiwen Xu's work include Semiconductor materials and devices (22 papers), Ferroelectric and Negative Capacitance Devices (10 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Haiwen Xu is often cited by papers focused on Semiconductor materials and devices (22 papers), Ferroelectric and Negative Capacitance Devices (10 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Haiwen Xu collaborates with scholars based in Singapore, United States and China. Haiwen Xu's co-authors include Xiao Gong, Chen Sun, Qiwen Kong, Kaizhen Han, Zijie Zheng, Chengkuan Wang, Jishen Zhang, Jishen Zhang, Subhranu Samanta and Annie Kumar and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Optics Letters.

In The Last Decade

Haiwen Xu

40 papers receiving 291 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Haiwen Xu Singapore 10 266 66 51 34 23 46 296
Neil Na Taiwan 10 232 0.9× 34 0.5× 172 3.4× 61 1.8× 42 1.8× 30 336
You-Ru Lin Taiwan 10 222 0.8× 46 0.7× 111 2.2× 47 1.4× 20 0.9× 27 259
M. Valenza France 13 480 1.8× 50 0.8× 67 1.3× 59 1.7× 19 0.8× 46 495
Joshua M. Grant United States 12 631 2.4× 87 1.3× 292 5.7× 187 5.5× 12 0.5× 31 655
Soon-Fatt Yoon Singapore 9 417 1.6× 33 0.5× 204 4.0× 97 2.9× 36 1.6× 23 439
Charles Möhl Switzerland 5 235 0.9× 27 0.4× 223 4.4× 30 0.9× 16 0.7× 14 288
Laurent Fulbert France 9 297 1.1× 34 0.5× 218 4.3× 34 1.0× 7 0.3× 30 329
Gloria Micó Spain 6 293 1.1× 35 0.5× 204 4.0× 46 1.4× 10 0.4× 8 318
Stéphane Malhouitre France 10 513 1.9× 44 0.7× 248 4.9× 60 1.8× 19 0.8× 48 537

Countries citing papers authored by Haiwen Xu

Since Specialization
Citations

This map shows the geographic impact of Haiwen Xu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Haiwen Xu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Haiwen Xu more than expected).

Fields of papers citing papers by Haiwen Xu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Haiwen Xu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Haiwen Xu. The network helps show where Haiwen Xu may publish in the future.

Co-authorship network of co-authors of Haiwen Xu

This figure shows the co-authorship network connecting the top 25 collaborators of Haiwen Xu. A scholar is included among the top collaborators of Haiwen Xu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Haiwen Xu. Haiwen Xu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Xu, Haiwen, et al.. (2025). Feasibility of liquid-phase xenon proportional scintillation for low-energy physics. Physical review. D. 111(1).
2.
Xu, Haiwen, et al.. (2025). Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga2O3 MOSFETs. Applied Physics Letters. 126(1). 1 indexed citations
3.
Jiao, Leming, Zuopu Zhou, Zijie Zheng, et al.. (2025). Experimental Demonstration and Modeling of BEOL-Compatible IGZO-Based Ferroelectric-Modulated Diodes. IEEE Transactions on Electron Devices. 72(3). 1146–1153.
4.
Zhang, Jishen, Kian Hua Tan, Satrio Wicaksono, et al.. (2025). Efficient Responsivity Enhancement of Surface-Illuminated InGaAs Avalanche Photodiode by Photon Trapping on the SOI Substrate. IEEE Transactions on Electron Devices. 72(5). 2725–2732.
5.
Shao, Rui, Jishen Zhang, Kian Hua Tan, et al.. (2024). First Photon-Trapping InGaAs Avalanche Photodiode and its Integration on the SOI Platform. 1–4. 2 indexed citations
6.
Sun, Chen, Qiwen Kong, Leming Jiao, et al.. (2024). Understanding Bias Stress-Induced Instabilities in ALD-Deposited ZnO FeFETs Featuring HZO-Al2O3-HZO Ferroelectric Stack. IEEE Electron Device Letters. 45(11). 2122–2125. 1 indexed citations
7.
Hood, N. F., A. Kopec, Yue Ma, et al.. (2023). Low energy electronic recoils and single electron detection with a liquid Xenon proportional scintillation counter. Journal of Instrumentation. 18(7). P07027–P07027. 6 indexed citations
8.
9.
Sun, Chen, Kaizhen Han, Subhranu Samanta, et al.. (2022). Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory. IEEE Transactions on Electron Devices. 69(9). 5262–5269. 21 indexed citations
10.
Xu, Haiwen, et al.. (2022). 300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 367–368. 3 indexed citations
11.
Zhang, Jishen, Haiwen Xu, Kian Hua Tan, et al.. (2022). First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 409–410. 4 indexed citations
12.
Chen, Yue, Gong Zhang, Jishen Zhang, et al.. (2022). Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si Substrates. IEEE Transactions on Electron Devices. 69(4). 2166–2172. 3 indexed citations
13.
Sun, Chen, Chao Li, Subhranu Samanta, et al.. (2022). Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (Adv. Electron. Mater. 12/2022). Advanced Electronic Materials. 8(12). 1 indexed citations
14.
Sun, Chen, Zijie Zheng, Kaizhen Han, et al.. (2021). Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure. IEEE Electron Device Letters. 42(12). 1786–1789. 34 indexed citations
15.
Zhang, Jishen, Haiwen Xu, Gong Zhang, et al.. (2021). First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Hetero Integrated with Si Photonics on SOI Platform for 1550 nm Detection. Symposium on VLSI Technology. 1–2. 1 indexed citations
16.
17.
Wang, Haibo, Yue Chen, Gong Zhang, et al.. (2021). First Demonstration of Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si Substrate for $2\ \mu \mathrm{m}$ Optoelectronic Integrated Circuits. 2021 IEEE International Electron Devices Meeting (IEDM). 46. 29.4.1–29.4.4. 2 indexed citations
18.
19.
Wu, Ying, Haiwen Xu, Kaizhen Han, & Xiao Gong. (2019). Thermal Stability and Sn Segregation of Low-Resistance Ti/p+-Ge0.95Sn0.05 Contact. IEEE Electron Device Letters. 40(10). 1575–1578. 7 indexed citations
20.
Gong, Xiao, Ying Wu, Haiwen Xu, et al.. (2019). Metal/P-type GeSn Contacts with Ultra-low Specific Contact Resistivity. 1–4. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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