Chengkuan Wang

408 citations

16 papers · 320 indexed · h-index 9

Electrical and Electronic Engineering
- Semiconductor materials and devices 9
- Thin-Film Transistor Technologies 8
- Ferroelectric and Negative Capacitance Devices 3
- Advancements in Semiconductor Devices and Circuit Design 3
- Photonic and Optical Devices 2
- Advanced Memory and Neural Computing 2
Materials Chemistry
- ZnO doping and properties 4
Polymers and Plastics
Biomedical Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 3

Co-authors: Kaizhen Han Xiao Gong Subhranu Samanta Chen Sun Annie Kumar Aaron Thean Haiwen Xu Qiwen Kong
Cited by: Electrical and Electronic Engineering Materials Chemistry Polymers and Plastics
Journals: Nano Letters (2 papers)IEEE Transactions on Electron Devices (3 papers)IEEE Electron Device Letters (3 papers)
Partner nations: Singapore United States China

In The Last Decade

Chengkuan Wang

15 papers receiving 318 citations

Peers

Countries citing papers authored by Chengkuan Wang

Since Specialization

Citations

This map shows the geographic impact of Chengkuan Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chengkuan Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chengkuan Wang more than expected).

Fields of papers citing papers by Chengkuan Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chengkuan Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chengkuan Wang. The network helps show where Chengkuan Wang may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Chengkuan Wang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Chengkuan Wang Line = papers co-authored together Chengkuan Wang links everyone, so they are left out of the graph.

All Works

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16 of 16 papers shown

#	Work
1	High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation Nano Letters ·Kaizhen Han,Yuye Kang,Yi-Hsin Tu,Chaoming Wu,Chengkuan Wang,Long Liu,Gong Zhang,Yue Chen,Kai Ni,Gengchiau Liang,Xiao Gong	2024	2
2	Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory IEEE Transactions on Electron Devices ·Chen Sun,Kaizhen Han,Subhranu Samanta,Qiwen Kong,Jishen Zhang,Haiwen Xu,Xinke Wang,Annie Kumar,Chengkuan Wang,Zijie Zheng,Xunzhao Yin,Kai Ni,Xiao Gong	2022	21
3	ITO Schottky Diode wth Record f_T Beyond 400 GHz: Exploring Thickness Depdendant Film Property and Novel Heterogeneous Design 2022 International Electron Devices Meeting (IEDM) ·Kaizhen Han,Chengkuan Wang,Yuye Kang,Long Liu,Gong Zhang,Yue Chen,Xiao Gong	2022	4
4	Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High G_m of 479.5 μS/μm (V_DS of 1 V) and f_T of 18.3 GHz (V_DS of 3 V) 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Chengkuan Wang,Annie Kumar,Kaizhen Han,Chen Sun,Haiwen Xu,Jishen Zhang,Yuye Kang,Qiwen Kong,Zijie Zheng,Yuxuan Wang,Xiao Gong	2022	17
5	Ge_0.95Sn_0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width Nano Letters ·Yuye Kang,Shengqiang Xu,Kaizhen Han,Eugene Y.-J. Kong,Zhigang Song,Sheng Luo,Annie Kumar,Chengkuan Wang,W. J. Fan,Gengchiau Liang,Xiao Gong	2021	28
6	Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length IEEE Transactions on Electron Devices ·Subhranu Samanta,Kaizhen Han,Chen Sun,Chengkuan Wang,Annie Kumar,Aaron Thean,Xiao Gong	2021	35
7	Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure IEEE Electron Device Letters ·Chen Sun,Zijie Zheng,Kaizhen Han,Subhranu Samanta,Jiuren Zhou,Qiwen Kong,Jishen Zhang,Haiwen Xu,Annie Kumar,Chengkuan Wang,Xiao Gong	2021	34
8	Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors IEEE Transactions on Electron Devices ·Kaizhen Han,Qiwen Kong,Yuye Kang,Chen Sun,Chengkuan Wang,Jishen Zhang,Haiwen Xu,Subhranu Samanta,Jiuren Zhou,Haibo Wang,Aaron Thean,Xiao Gong	2021	31
9	First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 10 8 Cycles Chen Sun,Kaizhen Han,Subhranu Samanta,Qiwen Kong,Jishen Zhang,Haiwen Xu,Xinke Wang,Annie Kumar,Chengkuan Wang,Zijie Zheng,Xunzhao Yin,Kai Ni,Xiao Gong	2021	8
10	Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs IEEE Electron Device Letters ·Yuye Kang,Kaizhen Han,Annie Kumar,Chengkuan Wang,Chen Sun,Zuopu Zhou,Jiuren Zhou,Xiao Gong	2021	12
11	Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO₂ Gate Dielectric and Excellent Uniformity IEEE Electron Device Letters ·Subhranu Samanta,Umesh Chand,Shengqiang Xu,Kaizhen Han,Ying Wu,Chengkuan Wang,Annie Kumar,Hasita Velluri,Yida Li,Xuanyao Fong,Aaron Thean,Xiao Gong	2020	68
12	Ultra-Low ρc Extraction for Recessed and Non-Recessed Contacts: Generalized Transmission Line Model Ying Wu,Haiwen Xu,Jishen Zhang,Chengkuan Wang,Zuopu Zhou,Haibo Wang,Xiao Gong,Yee‐Chia Yeo	2020	0
13	Surface Ga-Boosted Boron-Doped Si0.5 Ge0.5 using In-Situ CVD Epitaxy: Achieving 1.1 × 1021 cm−3 Active Doping Concentration and 5.7× 10−10 Ω-cm2 Contact Resistivity Haiwen Xu,Jishen Zhang,Lucas Petersen Barbosa Lima,Joe Margetis,Rami Khazaka,Qi Xie,John Tolle,Chengkuan Wang,Haibo Wang,Zuopu Zhou,Qiwen Kong,Xiao Gong	2020	2
14	Amorphous IGZO TFTs Featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 μS/μm at VDS of 1 V and ION of 350 μA/μm Subhranu Samanta,Kaizhen Han,Chen Sun,Chengkuan Wang,Aaron Thean,Xiao Gong	2020	47
15	First Demonstration of Complementary FinFETs and Tunneling FinFETs Co-Integrated on a 200 mm GeSnOI Substrate: A Pathway towards Future Hybrid Nano-electronics Systems Kaizhen Han,Ying Wu,Yi Chiau Huang,Shengqiang Xu,Annie Kumar,Eugene Y.-J. Kong,Yuye Kang,Jishen Zhang,Chengkuan Wang,Haiwen Xu,Chen Sun,Xiao Gong	2019	8
16	A Novel Fast-Turn-Around Ladder TLM Methodology with Parasitic Metal Resistance Elimination, and 2×10⁻¹⁰ Ω-cm²Resolution: Theoretical Design and Experimental Demonstration Ying Wu,Haiwen Xu,Lye-Hing Chua,Kaizhen Han,Wei Zou,Todd Henry,Jishen Zhang,Chengkuan Wang,Chen Sun,Xiao Gong	2019	3

About Chengkuan Wang

Chengkuan Wang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 16 papers that have together received 320 indexed citations. Recurring topics across this work include Semiconductor materials and devices (9 papers), Thin-Film Transistor Technologies (8 papers), ZnO doping and properties (4 papers), Semiconductor materials and interfaces (3 papers), Ferroelectric and Negative Capacitance Devices (3 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers), Photonic and Optical Devices (2 papers) and Advanced Memory and Neural Computing (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (309 citations), Materials Chemistry (125 citations) and Polymers and Plastics (27 citations). Chengkuan Wang has collaborated with scholars based in Singapore, United States and China. Frequent co-authors include Kaizhen Han, Xiao Gong, Subhranu Samanta, Chen Sun, Annie Kumar, Aaron Thean, Haiwen Xu, Qiwen Kong, Yuye Kang and Shengqiang Xu. Their work appears in journals such as Nano Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

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