Chengkuan Wang

408 citations

16 papers · 320 indexed · h-index 9

Co-authors: Kaizhen Han Xiao Gong Subhranu Samanta Chen Sun Annie Kumar Aaron Thean Haiwen Xu Qiwen Kong
Topics: Semiconductor materials and devices (9 papers)Thin-Film Transistor Technologies (8 papers)ZnO doping and properties (4 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Polymers and Plastics
Journals: Nano Letters IEEE Transactions on Electron Devices IEEE Electron Device Letters
Partner nations: Singapore United States China

In The Last Decade

Chengkuan Wang

15 papers receiving 318 citations

Peers

Countries citing papers authored by Chengkuan Wang

Since Specialization

Citations

This map shows the geographic impact of Chengkuan Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chengkuan Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chengkuan Wang more than expected).

Fields of papers citing papers by Chengkuan Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chengkuan Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chengkuan Wang. The network helps show where Chengkuan Wang may publish in the future.

Co-authorship network of co-authors of Chengkuan Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Chengkuan Wang. A scholar is included among the top collaborators of Chengkuan Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chengkuan Wang. Chengkuan Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

#	Work	Indexed citations
1	High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation 2024 ·Nano Letters ·Kaizhen Han,Yuye Kang,(unknown),(unknown),Chengkuan Wang,Long Liu,Gong Zhang,Yue Chen,Kai Ni,Gengchiau Liang,Xiao Gong	2
2	Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory 2022 ·IEEE Transactions on Electron Devices ·Chen Sun,Kaizhen Han,Subhranu Samanta,Qiwen Kong,Jishen Zhang,Haiwen Xu,Xinke Wang,Annie Kumar,Chengkuan Wang,Zijie Zheng,Xunzhao Yin,Kai Ni,Xiao Gong	21
3	ITO Schottky Diode wth Record f_T Beyond 400 GHz: Exploring Thickness Depdendant Film Property and Novel Heterogeneous Design 2022 ·2022 International Electron Devices Meeting (IEDM) ·Kaizhen Han,Chengkuan Wang,Yuye Kang,Long Liu,Gong Zhang,Yue Chen,Xiao Gong	4
4	Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High G_m of 479.5 μS/μm (V_DS of 1 V) and f_T of 18.3 GHz (V_DS of 3 V) 2022 ·2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Chengkuan Wang,Annie Kumar,Kaizhen Han,Chen Sun,Haiwen Xu,Jishen Zhang,Yuye Kang,Qiwen Kong,Zijie Zheng,Yuxuan Wang,Xiao Gong	17
5	Ge_0.95Sn_0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width 2021 ·Nano Letters ·Yuye Kang,Shengqiang Xu,Kaizhen Han,(unknown),Zhigang Song,Sheng Luo,Annie Kumar,Chengkuan Wang,W. J. Fan,Gengchiau Liang,Xiao Gong	28
6	Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length 2021 ·IEEE Transactions on Electron Devices ·Subhranu Samanta,Kaizhen Han,Chen Sun,Chengkuan Wang,Annie Kumar,Aaron Thean,Xiao Gong	35
7	Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure 2021 ·IEEE Electron Device Letters ·Chen Sun,Zijie Zheng,Kaizhen Han,Subhranu Samanta,Jiuren Zhou,Qiwen Kong,Jishen Zhang,Haiwen Xu,Annie Kumar,Chengkuan Wang,Xiao Gong	34
8	Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors 2021 ·IEEE Transactions on Electron Devices ·Kaizhen Han,Qiwen Kong,Yuye Kang,Chen Sun,Chengkuan Wang,Jishen Zhang,Haiwen Xu,Subhranu Samanta,Jiuren Zhou,(unknown),Aaron Thean,Xiao Gong	31
9	First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 10 8 Cycles 2021 ·Chen Sun,Kaizhen Han,Subhranu Samanta,Qiwen Kong,Jishen Zhang,Haiwen Xu,Xinke Wang,Annie Kumar,Chengkuan Wang,Zijie Zheng,Xunzhao Yin,Kai Ni,Xiao Gong	8
10	Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs 2021 ·IEEE Electron Device Letters ·Yuye Kang,Kaizhen Han,Annie Kumar,Chengkuan Wang,Chen Sun,Zuopu Zhou,Jiuren Zhou,Xiao Gong	12
11	Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO₂ Gate Dielectric and Excellent Uniformity 2020 ·IEEE Electron Device Letters ·Subhranu Samanta,Umesh Chand,Shengqiang Xu,Kaizhen Han,Ying Wu,Chengkuan Wang,Annie Kumar,(unknown),Yida Li,Xuanyao Fong,Aaron Thean,Xiao Gong	68
12	Ultra-Low ρc Extraction for Recessed and Non-Recessed Contacts: Generalized Transmission Line Model 2020 ·Ying Wu,Haiwen Xu,Jishen Zhang,Chengkuan Wang,Zuopu Zhou,(unknown),Xiao Gong,Yee‐Chia Yeo	0
13	Surface Ga-Boosted Boron-Doped Si0.5 Ge0.5 using In-Situ CVD Epitaxy: Achieving 1.1 × 1021 cm−3 Active Doping Concentration and 5.7× 10−10 Ω-cm2 Contact Resistivity 2020 ·Haiwen Xu,Jishen Zhang,Lucas Petersen Barbosa Lima,Joe Margetis,(unknown),Qi Xie,John Tolle,Chengkuan Wang,(unknown),Zuopu Zhou,Qiwen Kong,Xiao Gong	2
14	Amorphous IGZO TFTs Featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 μS/μm at VDS of 1 V and ION of 350 μA/μm 2020 ·Subhranu Samanta,Kaizhen Han,Chen Sun,Chengkuan Wang,Aaron Thean,Xiao Gong	47
15	First Demonstration of Complementary FinFETs and Tunneling FinFETs Co-Integrated on a 200 mm GeSnOI Substrate: A Pathway towards Future Hybrid Nano-electronics Systems 2019 ·Kaizhen Han,Ying Wu,(unknown),Shengqiang Xu,Annie Kumar,(unknown),Yuye Kang,Jishen Zhang,Chengkuan Wang,Haiwen Xu,Chen Sun,Xiao Gong	8
16	A Novel Fast-Turn-Around Ladder TLM Methodology with Parasitic Metal Resistance Elimination, and 2×10⁻¹⁰ Ω-cm²Resolution: Theoretical Design and Experimental Demonstration 2019 ·Ying Wu,Haiwen Xu,(unknown),Kaizhen Han,Wei Zou,Todd Henry,Jishen Zhang,Chengkuan Wang,Chen Sun,Xiao Gong	3

About Chengkuan Wang

Chengkuan Wang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 16 papers that have together received 320 indexed citations. Recurring topics across this work include Semiconductor materials and devices (9 papers), Thin-Film Transistor Technologies (8 papers) and ZnO doping and properties (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (309 citations), Materials Chemistry (125 citations) and Polymers and Plastics (27 citations). Chengkuan Wang has collaborated with scholars based in Singapore, United States and China. Frequent co-authors include Kaizhen Han, Xiao Gong, Subhranu Samanta, Chen Sun, Annie Kumar, Aaron Thean, Haiwen Xu, Qiwen Kong, Yuye Kang and Shengqiang Xu. Their work appears in journals such as Nano Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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