Chengkuan Wang

408 total citations
16 papers, 320 citations indexed

About

Chengkuan Wang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Chengkuan Wang has authored 16 papers receiving a total of 320 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Chengkuan Wang's work include Semiconductor materials and devices (9 papers), Thin-Film Transistor Technologies (8 papers) and ZnO doping and properties (4 papers). Chengkuan Wang is often cited by papers focused on Semiconductor materials and devices (9 papers), Thin-Film Transistor Technologies (8 papers) and ZnO doping and properties (4 papers). Chengkuan Wang collaborates with scholars based in Singapore, United States and China. Chengkuan Wang's co-authors include Kaizhen Han, Xiao Gong, Subhranu Samanta, Chen Sun, Annie Kumar, Aaron Thean, Haiwen Xu, Qiwen Kong, Yuye Kang and Shengqiang Xu and has published in prestigious journals such as Nano Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Chengkuan Wang

15 papers receiving 318 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chengkuan Wang Singapore 9 309 125 52 27 16 16 320
Annie Kumar Singapore 12 351 1.1× 109 0.9× 77 1.5× 22 0.8× 15 0.9× 27 367
Edward Namkyu Cho South Korea 11 374 1.2× 240 1.9× 41 0.8× 60 2.2× 24 1.5× 21 400
Chen-Feng Hsu Taiwan 8 188 0.6× 181 1.4× 43 0.8× 16 0.6× 16 1.0× 15 262
Xinlv Duan China 12 239 0.8× 77 0.6× 29 0.6× 17 0.6× 9 0.6× 27 247
Enrico Caruso Italy 10 372 1.2× 194 1.6× 64 1.2× 15 0.6× 15 0.9× 29 425
Jianghua Xu China 9 142 0.5× 113 0.9× 38 0.7× 26 1.0× 50 3.1× 17 209
Daisuke Matsubayashi Japan 13 375 1.2× 196 1.6× 23 0.4× 67 2.5× 20 1.3× 31 394
Hung‐Che Ting Taiwan 10 383 1.2× 193 1.5× 30 0.6× 77 2.9× 9 0.6× 15 390
Mark Triplett United States 7 163 0.5× 148 1.2× 48 0.9× 37 1.4× 30 1.9× 9 232
Ciyu Ge China 11 253 0.8× 179 1.4× 40 0.8× 53 2.0× 19 1.2× 16 287

Countries citing papers authored by Chengkuan Wang

Since Specialization
Citations

This map shows the geographic impact of Chengkuan Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chengkuan Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chengkuan Wang more than expected).

Fields of papers citing papers by Chengkuan Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chengkuan Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chengkuan Wang. The network helps show where Chengkuan Wang may publish in the future.

Co-authorship network of co-authors of Chengkuan Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Chengkuan Wang. A scholar is included among the top collaborators of Chengkuan Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chengkuan Wang. Chengkuan Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Han, Kaizhen, Yuye Kang, Chengkuan Wang, et al.. (2024). High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation. Nano Letters. 24(26). 7919–7926. 2 indexed citations
2.
Sun, Chen, Kaizhen Han, Subhranu Samanta, et al.. (2022). Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory. IEEE Transactions on Electron Devices. 69(9). 5262–5269. 21 indexed citations
3.
Han, Kaizhen, Chengkuan Wang, Yuye Kang, et al.. (2022). ITO Schottky Diode wth Record fT Beyond 400 GHz: Exploring Thickness Depdendant Film Property and Novel Heterogeneous Design. 2022 International Electron Devices Meeting (IEDM). 566. 22.7.1–22.7.4. 4 indexed citations
4.
Wang, Chengkuan, Annie Kumar, Kaizhen Han, et al.. (2022). Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V). 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 294–295. 17 indexed citations
5.
Kang, Yuye, Shengqiang Xu, Kaizhen Han, et al.. (2021). Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width. Nano Letters. 21(13). 5555–5563. 28 indexed citations
6.
Samanta, Subhranu, Kaizhen Han, Chen Sun, et al.. (2021). Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length. IEEE Transactions on Electron Devices. 68(3). 1050–1056. 35 indexed citations
7.
Sun, Chen, Zijie Zheng, Kaizhen Han, et al.. (2021). Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure. IEEE Electron Device Letters. 42(12). 1786–1789. 34 indexed citations
8.
Han, Kaizhen, Qiwen Kong, Yuye Kang, et al.. (2021). Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors. IEEE Transactions on Electron Devices. 68(12). 6610–6616. 31 indexed citations
9.
Sun, Chen, Kaizhen Han, Subhranu Samanta, et al.. (2021). First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 10 8 Cycles. 1–2. 8 indexed citations
10.
Kang, Yuye, Kaizhen Han, Annie Kumar, et al.. (2021). Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs. IEEE Electron Device Letters. 42(10). 1488–1491. 12 indexed citations
11.
Samanta, Subhranu, Umesh Chand, Shengqiang Xu, et al.. (2020). Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity. IEEE Electron Device Letters. 41(6). 856–859. 68 indexed citations
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Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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