Yuangang Wang

1.5k total citations
75 papers, 1.1k citations indexed

About

Yuangang Wang is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Yuangang Wang has authored 75 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electronic, Optical and Magnetic Materials, 41 papers in Electrical and Electronic Engineering and 35 papers in Condensed Matter Physics. Recurrent topics in Yuangang Wang's work include Ga2O3 and related materials (45 papers), GaN-based semiconductor devices and materials (35 papers) and ZnO doping and properties (30 papers). Yuangang Wang is often cited by papers focused on Ga2O3 and related materials (45 papers), GaN-based semiconductor devices and materials (35 papers) and ZnO doping and properties (30 papers). Yuangang Wang collaborates with scholars based in China, Singapore and Australia. Yuangang Wang's co-authors include Zhihong Feng, Yuanjie Lv, Shujun Cai, Xingye Zhou, Xubo Song, Shixiong Liang, Xin Tan, Shaobo Dun, Guodong Gu and Shibing Long and has published in prestigious journals such as Applied Physics Letters, PLoS ONE and IEEE Transactions on Power Electronics.

In The Last Decade

Yuangang Wang

67 papers receiving 1.1k citations

Peers

Yuangang Wang

EOMM

EEE

RESE

CMP

Dinusha Herath Mudiyanselage United States

Jiangxiazi Lin Hong Kong

M. Lamont Schnoes United States

Lorenzo Baldrati Germany

Choongjae Won South Korea

Yeongsup Sohn South Korea

Simón Oyarzún Chile

Somnath Jana Sweden

Ke Chen United States

Dinusha Herath Mudiyanselage United States

Yuangang Wang

244 ×0.3

EOMM

261 ×0.4

202 ×0.5

EEE

108 ×0.3

RESE

138 ×0.4

CMP

Citations per year, relative to Yuangang Wang Yuangang Wang (= 1×) peers Dinusha Herath Mudiyanselage

Countries citing papers authored by Yuangang Wang

Since Specialization

Citations

This map shows the geographic impact of Yuangang Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuangang Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuangang Wang more than expected).

Fields of papers citing papers by Yuangang Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuangang Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuangang Wang. The network helps show where Yuangang Wang may publish in the future.

Co-authorship network of co-authors of Yuangang Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Yuangang Wang. A scholar is included among the top collaborators of Yuangang Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuangang Wang. Yuangang Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wang, Yuangang, et al.. (2025). Atmospheric neutron-induced single-event burnout in β -Ga2O3 Schottky barrier diode. Applied Physics Letters. 126(24). 2 indexed citations

Wang, Yuangang, et al.. (2025). Single-event burnout in β-Ga2O3 Schottky barrier diode induced by heavy ion irradiation. Applied Physics Letters. 127(12).

Liu, Hongyu, Haozhong Wu, Yuangang Wang, et al.. (2025). Source-field-plated β-(AlxGa1-x)2O3 MOSFET with breakdown voltage over 7kV. Micro and Nanostructures. 206. 208255–208255.

Liu, Hongyu, Xiaoli Lu, Yuangang Wang, et al.. (2025). Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology. The European Physical Journal Special Topics. 234(2). 283–290. 2 indexed citations

Zhang, Yu, Jin Sui, Ge Yang, et al.. (2024). Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode. Materials Science in Semiconductor Processing. 187. 109121–109121. 1 indexed citations

Jiang, Weibo, Yuangang Wang, Chao Peng, et al.. (2024). Single-event burnout in β-Ga2O3 Schottky barrier diode induced by high-energy proton. Applied Physics Letters. 125(9). 5 indexed citations

Wang, Yuangang, Wei Wang, Yuanjie Lv, et al.. (2024). 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate. Journal of Semiconductors. 45(1). 12501–12501. 4 indexed citations

Zhang, Yu, Jin Sui, Jiaxiang Chen, et al.. (2024). Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(2). 2 indexed citations

Ma, Teng, Yuangang Wang, Zhifeng Lei, et al.. (2024). Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diode on Different Bias Conditions. IEEE Transactions on Electron Devices. 72(1). 147–153. 2 indexed citations

10.

Wu, Feihong, Yuangang Wang, Guangzhong Jian, et al.. (2023). Superior Performance β-Ga₂O₃ Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier. IEEE Transactions on Electron Devices. 70(3). 1199–1205. 39 indexed citations

11.

Wang, Yuangang, Yuanjie Lv, Hongyu Liu, et al.. (2023). High-performance Ga₂O₃ Schottky Barrier Diode with a Self-aligned Shallow Groove and Dual Field-plate. 1 indexed citations

12.

Han, Tingting, Yuangang Wang, Yuanjie Lv, et al.. (2023). 2.83-kV double-layered NiO/β-Ga₂O₃ vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm². Journal of Semiconductors. 44(7). 72802–72802. 6 indexed citations

13.

Feng, Shiwei, Zhihong Feng, Yuanjie Lv, et al.. (2021). Characterization of thermal-resistance in Ga ₂ O ₃ Schottky barrier diodes with temperature-sensitive electrical parameters. Semiconductor Science and Technology. 36(11). 115010–115010. 3 indexed citations

14.

Song, Xubo, Shixiong Liang, Yuanjie Lv, et al.. (2021). GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz. IEEE Electron Device Letters. 42(12). 1739–1742. 21 indexed citations

15.

Lv, Yuanjie, Yuangang Wang, Shaobo Dun, et al.. (2020). Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities. IEEE Transactions on Power Electronics. 36(6). 6179–6182. 136 indexed citations

16.

Lv, Yuanjie, Xingye Zhou, Shibing Long, et al.. (2019). Lateral source field-plated β -Ga ₂ O ₃ MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm ². Semiconductor Science and Technology. 34(11). 11LT02–11LT02. 31 indexed citations

17.

Zhou, Xingye, Zhihong Feng, Shujun Cai, et al.. (2019). $8\times8$ 4H-SiC Ultraviolet Avalanche Photodiode Arrays With High Uniformity. IEEE Electron Device Letters. 40(10). 1591–1594. 17 indexed citations

18.

Lv, Yuanjie, Xubo Song, Zezhao He, et al.. (2018). Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs. Superlattices and Microstructures. 117. 132–136. 26 indexed citations

19.

Tan, Xin, Yuanjie Lv, Yuangang Wang, et al.. (2018). Direct-readout pressure sensor based on AlGaN/GaN heterostructure. Microsystem Technologies. 26(10). 3189–3192. 2 indexed citations

20.

Li, Juan, Haifeng Tang, Yun Zhang, et al.. (2013). Saponin 1 Induces Apoptosis and Suppresses NF-κB-Mediated Survival Signaling in Glioblastoma Multiforme (GBM). PLoS ONE. 8(11). e81258–e81258. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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